Patents by Inventor Jo-Ann Theresa Schwartz
Jo-Ann Theresa Schwartz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11104825Abstract: Metal compound chemically anchored colloidal particles wherein the metal compound is in molecular form are disclosed. A facile and fast process to chemically anchor metal compounds uniformly onto colloidal particle surfaces via chemical bonding has been developed. Metal compounds are chemically anchored to the surface of colloidal particles via an organic linking agent. Uniformly distributed metal compounds remain in molecular form after the process. The metal compound chemically anchored colloidal particles can be used as solid catalyst in metal chemical-mechanical planarization process.Type: GrantFiled: November 13, 2018Date of Patent: August 31, 2021Assignee: VERSUM MATERIALS US, LLCInventors: Hongjun Zhou, Xiaobo Shi, Jo-Ann Theresa Schwartz
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Patent number: 10669449Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer low dishing, low defects, and high removal rate for polishing oxide films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.Type: GrantFiled: September 9, 2018Date of Patent: June 2, 2020Assignee: VERSUM MATERIALS US, LLCInventors: Hongjun Zhou, Jo-Ann Theresa Schwartz, Malcolm Grief, Xiaobo Shi, Krishna P. Murella, Steven Charles Winchester, John Edward Quincy Hughes, Mark Leonard O'Neill, Andrew J. Dodd, Dnyanesh Chandrakant Tamboli, Reinaldo Mario Machado
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Publication number: 20200115590Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer low dishing, low defects, and high removal rate for polishing oxide films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.Type: ApplicationFiled: September 9, 2018Publication date: April 16, 2020Applicant: Versum Materials US, LLCInventors: Hongjun Zhou, Jo-Ann Theresa Schwartz, Malcolm Grief, Xiaobo Shi, Krishna P. Murella, Steven Charles Winchester, John Edward Quincy Hughes, Mark Leonard O'Neill, Andrew J. Dodd, Dnyanesh Chandrakant Tamboli, Reinaldo Mario Machado
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Publication number: 20190100678Abstract: Metal compound chemically anchored colloidal particles wherein the metal compound is in molecular form are disclosed. A facile and fast process to chemically anchor metal compounds uniformly onto colloidal particle surfaces via chemical bonding has been developed. Metal compounds are chemically anchored to the surface of colloidal particles via an organic linking agent. Uniformly distributed metal compounds remain in molecular form after the process. The metal compound chemically anchored colloidal particles can be used as solid catalyst in metal chemical-mechanical planarization process.Type: ApplicationFiled: November 13, 2018Publication date: April 4, 2019Applicant: Versum Materials US, LLCInventors: Hongjun Zhou, Xiaobo Shi, Jo-Ann Theresa Schwartz
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Patent number: 10160884Abstract: Metal compound chemically anchored colloidal particles wherein the metal compound is in molecular form are disclosed. A facile and fast process to chemically anchor metal compounds uniformly onto colloidal particle surfaces via chemical bonding has been developed. Metal compounds are chemically anchored to the surface of colloidal particles via an organic linking agent. Uniformly distributed metal compounds remain in molecular form after the process. The metal compound chemically anchored colloidal particles can be used as solid catalyst in metal chemical-mechanical planarization process.Type: GrantFiled: March 15, 2016Date of Patent: December 25, 2018Assignee: Versum Materials US, LLCInventors: Hongjun Zhou, Xiaobo Shi, Jo-Ann Theresa Schwartz
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Patent number: 10109493Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer low dishing, low defects, and high removal rate for polishing oxide films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.Type: GrantFiled: January 12, 2016Date of Patent: October 23, 2018Assignee: VERSUM MATERIALS US, LLCInventors: Hongjun Zhou, Jo-Ann Theresa Schwartz, Malcolm Grief, Xiaobo Shi, Krishna P. Murella, Steven Charles Winchester, John Edward Quincy Hughes, Mark Leonard O'Neill, Andrew J. Dodd, Dnyanesh Chandrakant Tamboli, Reinaldo Mario Machado
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Patent number: 10011741Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.Type: GrantFiled: March 2, 2016Date of Patent: July 3, 2018Assignee: VERSUM MATERIALS US, LLCInventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steven Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai
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Publication number: 20160280962Abstract: Metal compound chemically anchored colloidal particles wherein the metal compound is in molecular form are disclosed. A facile and fast process to chemically anchor metal compounds uniformly onto colloidal particle surfaces via chemical bonding has been developed. Metal compounds are chemically anchored to the surface of colloidal particles via an organic linking agent. Uniformly distributed metal compounds remain in molecular form after the process. The metal compound chemically anchored colloidal particles can be used as solid catalyst in metal chemical-mechanical planarization process.Type: ApplicationFiled: March 15, 2016Publication date: September 29, 2016Applicant: Air Products and Chemicals, Inc.Inventors: Hongjun Zhou, Xiaobo Shi, Jo-Ann Theresa Schwartz
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Publication number: 20160200944Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer low dishing, low defects, and high removal rate for polishing oxide films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.Type: ApplicationFiled: January 12, 2016Publication date: July 14, 2016Applicant: Air Products and Chemicals, Inc.Inventors: Hongjun Zhou, Jo-Ann Theresa Schwartz, Malcolm Grief, Xiaobo Shi, Krishna P. Murella, Steven Charles Winchester, John Edward Quincy Hughes, Mark Leonard O'Neill, Andrew J. Dodd, Dnyanesh Chandrakant Tamboli, Reinaldo Mario Machado
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Publication number: 20160177134Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.Type: ApplicationFiled: March 2, 2016Publication date: June 23, 2016Applicant: Air Products and Chemicals, Inc.Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steven Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai
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Patent number: 9305476Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.Type: GrantFiled: May 12, 2015Date of Patent: April 5, 2016Assignee: Air Products and Chemicals, Inc.Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steven Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai
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Publication number: 20150247063Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.Type: ApplicationFiled: May 12, 2015Publication date: September 3, 2015Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steven Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai
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Patent number: 9062230Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at lease a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.Type: GrantFiled: September 10, 2014Date of Patent: June 23, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steve Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai
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Publication number: 20140374378Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at lease a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.Type: ApplicationFiled: September 10, 2014Publication date: December 25, 2014Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steven Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai
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Patent number: 8859428Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at lease a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.Type: GrantFiled: September 18, 2013Date of Patent: October 14, 2014Assignee: Air Products and Chemicals, Inc.Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steve Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai
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Publication number: 20140273458Abstract: Chemical mechanical polishing (CMP) compositions for polishing tungsten or tungsten-containing substrates comprise an abrasive, at least one solid catalyst, a chemical additive selected from the groups consisting of piperazine derivatives, salts of cyanate, and combinations thereof; and a liquid carrier. Systems and processes use the aqueous formulations for polishing tungsten or tungsten-containing substrates.Type: ApplicationFiled: December 27, 2013Publication date: September 18, 2014Applicant: Air Products And Chemicals, Inc.Inventors: Xiaobo Shi, Hongjun Zhou, Blake J. Lew, James Allen Schlueter, Jo-Ann Theresa Schwartz
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Patent number: 6362128Abstract: A method for manufacturing of an improved attrition resistant catalyst having an oxide-rich surface layer involving forming an aqueous slurry comprising; catalyst, catalyst precursor or catalyst support particles (e.g., vanadium/phosphorus oxide, V/P/O catalyst), a large particle colloidal oxide sol (e.g., 200 Å, 600 Å, 750 Å colloidal silica, sodium stabilized) as the major oxide-rich surface layer forming component, and a second oxide-rich surface layer forming component solution wherein the solute is selected from the group consisting essentially of a precursor of the oxide-rich surface with average particle size no greater than 5 nm (e.g., aqueous silicic acid or polysilicic acid), a colloidal oxide sol wherein oxide particles in the sol have an average size below 10 nm (e.g., 50 Å colloidal silica), and mixtures thereof and then spray drying the slurry to form porous microspheres of attrition resistant catalyst; and, calcining/activating the spray dried microspheres.Type: GrantFiled: November 19, 1999Date of Patent: March 26, 2002Assignee: E. I. du Pont de Nemours and CompanyInventor: Jo-Ann Theresa Schwartz
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Patent number: 6008384Abstract: An improved two step (dual stage catalysis) aqueous hydrogenation process and a novel trimetallic hydrogenation catalysts consisting essentially of highly dispersed, reduced ruthenium and rhenium metals in the presence of a third metal tin on carbon support particular useful in the second stage of the process. Such process and catalyst exhibit high conversion rates in aqueous solution hydrogenation of hydrogenatable precursors (e.g., maleic acid, succinic acid, corresponding esters, .gamma.-butyrolactone, etc.) to tetrahydrofuran, .gamma.-butyrolactone, 1,4-butanediol and mixtures thereof wherein the relative molar ratio of 1,4-butanediol to tetrahydrofuran products being produced can be controlled.Type: GrantFiled: March 3, 1998Date of Patent: December 28, 1999Assignee: E. I. du Pont de Nemours and CompanyInventors: Richard Edmond Bockrath, Daniel Campos, Jo-Ann Theresa Schwartz, Richard Thomas Stimek