Abstract: A molded semiconductor package includes: a semiconductor die embedded in a mold compound; a first heat spreader partly embedded in the mold compound and thermally coupled to a first side of the semiconductor die; and a second heat spreader partly embedded in the mold compound and thermally coupled to a second side of the semiconductor die opposite the first side. The first heat spreader includes at least one heat dissipative structure protruding from a side of the first heat spreader uncovered by the mold compound and facing away from the semiconductor die. The mold compound is configured to channel a fluid over the at least one heat dissipative structure in a direction parallel to the first side of the power semiconductor die. Corresponding methods of production and electronic assemblies are also described.

Abstract: A semiconductor device includes a carrier, a first external contact, a second external contact, and a semiconductor die. The semiconductor die has a first main face, a second main face opposite to the first main face, a first contact pad disposed on the first main face, a second contact pad disposed on the second main face, a third contact pad disposed on the second main face, and a vertical transistor. The semiconductor die is disposed with the first main face on the carrier. A clip connects the second contact pad to the second external contact. A first bond wire is connected between the third contact pad and the first external contact. The first bond wire is disposed at least partially under the clip.

Abstract: A semiconductor package includes a die pad having a die attach surface, a first laterally separated and vertically offset from the die pad, a semiconductor die mounted on the die attach surface and comprising a first terminal on an upper surface of the semiconductor die, an interconnect clip that is electrically connected to the first terminal and to the first lead, and a heat spreader mounted on top of the interconnect clip. The interconnect clip includes a first planar section that interfaces with the upper surface of the semiconductor die and extends past an outer edge side of the die pad. The heat spreader covers an area of the first planar section that is larger than an area of the semiconductor die. The heat spreader laterally extends past a first outer edge side of the die pad that faces the first lead.

Abstract: A molded semiconductor package includes: a semiconductor die embedded in a mold compound; a first heat spreader partly embedded in the mold compound and thermally coupled to a first side of the semiconductor die; and a second heat spreader partly embedded in the mold compound and thermally coupled to a second side of the semiconductor die opposite the first side. The first heat spreader includes at least one heat dissipative structure protruding from a side of the first heat spreader uncovered by the mold compound and facing away from the semiconductor die. The mold compound is configured to channel a fluid over the at least one heat dissipative structure in a direction parallel to the first side of the power semiconductor die. Corresponding methods of production and electronic assemblies are also described.

Abstract: A semiconductor device includes a carrier, a first external contact, a second external contact, and a semiconductor die. The semiconductor die has a first main face, a second main face opposite to the first main face, a first contact pad disposed on the first main face, a second contact pad disposed on the second main face, a third contact pad disposed on the second main face, and a vertical transistor. The semiconductor die is disposed with the first main face on the carrier. A clip connects the second contact pad to the second external contact. A first bond wire is connected between the third contact pad and the first external contact. The first bond wire is disposed at least partially under the clip.

Abstract: A semiconductor package includes a die pad having a die attach surface, a first laterally separated and vertically offset from the die pad, a semiconductor die mounted on the die attach surface and comprising a first terminal on an upper surface of the semiconductor die, an interconnect clip that is electrically connected to the first terminal and to the first lead, and a heat spreader mounted on top of the interconnect clip. The interconnect clip includes a first planar section that interfaces with the upper surface of the semiconductor die and extends past an outer edge side of the die pad. The heat spreader covers an area of the first planar section that is larger than an area of the semiconductor die. The heat spreader laterally extends past a first outer edge side of the die pad that faces the first lead.

Abstract: A lead frame includes a die pad having a surface, a first lead post, a first lead, a second lead post, and a second lead. The first lead post has a surface coplanar with the surface of the die pad and is in a first plane. The first lead is coupled to the first lead post. The second lead post is in a second plane different from the first plane. The second lead is coupled to the second lead post.

Abstract: A lead frame includes a die pad having a surface, a first lead post, a first lead, a second lead post, and a second lead. The first lead post has a surface coplanar with the surface of the die pad and is in a first plane. The first lead is coupled to the first lead post. The second lead post is in a second plane different from the first plane. The second lead is coupled to the second lead post.