Abstract: The present invention provides an etching agent that is able to etch a Cu film by a simple chemical etching method such as an immersion method when the low resistance Cu film is used for a wiring material, while allowing time-dependent changes of the etching rate to be small and preventing a pattern narrowing phenomenon ascribed to irregular amount of side etching of the Cu film from occurring, by providing an etching agent comprising an aqueous solution containing potassium hydrogen peroxosulfate and hydrofluoric acid, wherein masks of a give pattern is formed on the surface of a laminated film prepared by sequentially depositing a Ti or Ti alloy film and a Cu film on a substrate, and wherein a gate electrode (a laminated wiring) and a lower pad layer (a laminated wiring) with give patterns are formed by etching the laminated film using the etching agent having the foregoing construction.

Abstract: The present invention provides an etching agent that is able to etch a Cu film by a simple chemical etching method such as an immersion method when the low resistance Cu film is used for a wiring material, while allowing time-dependent changes of the etching rate to be small and preventing a pattern narrowing phenomenon ascribed to irregular amount of side etching of the Cu film from occurring, by providing an etching agent comprising an aqueous solution containing potassium hydrogen peroxosulfate and hydrofluoric acid, wherein masks of a give pattern is formed on the surface of a laminated film prepared by sequentially depositing a Ti or Ti alloy film and a Cu film on a substrate, and wherein a gate electrode (a laminated wiring) and a lower pad layer (a laminated wiring) with give patterns are formed by etching the laminated film using the etching agent having the foregoing construction.

Abstract: A source line is directly connected to a source terminal composed of indium zinc oxide in a thin-film transistor substrate. A gate line is directly connected to a gate terminal composed of indium zinc oxide. Alternatively, drain electrodes of thin-film transistors for switching a plurality of pixel electrodes are directly connected to pixel electrodes composed of indium zinc oxide. These configurations do not require a passivation film which is essential for conventional thin-film transistor substrates, and the resulting thin-film transistor substrate can be made by a reduced number of manufacturing steps.

Abstract: A source line is directly connected to a source terminal composed of indium zinc oxide in a thin-film transistor substrate. A gate line is directly connected to a gate terminal composed of indium zinc oxide. Alternatively, drain electrodes of thin-film transistors for switching a plurality of pixel electrodes are directly connected to pixel electrodes composed of indium zinc oxide. These configurations do not require a passivation film which is essential for conventional thin-film transistor substrates, and the resulting thin-film transistor substrate can be made by a reduced number of manufacturing steps.

Abstract: A source line is directly connected to a source terminal composed of indium zinc oxide in a thin-film transistor substrate. A gate line is directly connected to a gate terminal composed of indium zinc oxide. Alternatively, drain electrodes of thin-film transistors for switching a plurality of pixel electrodes are directly connected to pixel electrodes composed of indium zinc oxide. These configurations do not require a passivation film which is essential for conventional thin-film transistor substrates, and the resulting thin-film transistor substrate can be made by a reduced number of manufacturing steps.

Abstract: A TFT structure having sufficiently low resistance wiring is provided, in which characteristic defects thereof caused by undercuts in a barrier metal layer can be prevented, the undercuts formed in a step for processing a source and a drain electrode composed of copper. The TFT structure of the present invention comprises a gate electrode on a glass substrate, a gate insulation film, a semiconductor active layer disposed on the gate insulation film so as to oppose the gate electrode, ohmic contact layers formed on both edge portions of the semiconductor active layer, and a source and a drain electrode connected to the semiconductor active layer via the respective ohmic contact layers. In addition, the source electrode and the drain electrode are formed of copper, and barrier metal layers are formed on the bottom surfaces of the source electrode and the drain electrode above areas at which the upper surfaces of the respective ohmic contact layers are located.

Abstract: A TFT structure having sufficiently low resistance wiring is provided. The present invention prevents the characteristic defects caused by undercuts in a barrier metal layer. In the prior art, the undercuts are formed by a step for processing a source and a drain electrode composed of copper. The TFT structure of the present invention comprises a gate electrode on a glass substrate, a gate insulation film, a semiconductor active layer disposed on the gate insulation film so as to oppose the gate electrode, ohmic contact layers formed on both edge portions of the semiconductor active layer, and a source and a drain electrode connected to the semiconductor active layer via the respective ohmic contact layers. In addition, the source electrode and the drain electrode are formed of copper. Barrier metal layers are formed on the bottom surfaces of the source electrode and the drain electrode above areas at which the upper surfaces of the respective ohmic contact layers are located.

Abstract: A TFT structure having sufficiently low resistance wiring is provided, in which characteristic defects thereof caused by undercuts in a barrier metal layer can be prevented, the undercuts formed in a step for processing a source and a drain electrode composed of copper. The TFT structure of the present invention comprises a gate electrode on a glass substrate, a gate insulation film, a semiconductor active layer disposed on the gate insulation film so as to oppose the gate electrode, ohmic contact layers formed on both edge portions of the semiconductor active layer, and a source and a drain electrode connected to the semiconductor active layer via the respective ohmic contact layers. In addition, the source electrode and the drain electrode are formed of copper, and barrier metal layers are formed on the bottom surfaces of the source electrode and the drain electrode above areas at which the upper surfaces of the respective ohmic contact layers are located.