Abstract: The invention relates to a method for manufacturing an optoelectronic device (50) including wire-like, conical, or frustoconical semiconductor elements (20) predominantly comprising a III-V compound. Each semiconductor element extends along an axis and includes a portion (54), the side surfaces (55) of which are covered with a shell (56) including at least one active region (31), wherein the portions are created by continuous growth in a reactor, and wherein the temperature in the reactor varies in an uninterrupted manner from a first temperature value that favors growth of first crystallographic planes perpendicular to said axis, to a second temperature value that is strictly lower than the first temperature value and favors growth of second crystallographic planes parallel to said axis.

Abstract: A method for homogenizing the height of a plurality of wires from the plurality of wires erected on a face of a substrate, the method including a first step of coating the face of the substrate including the plurality of wires with a first film, the first film embedding the plurality of wires over a first height; a second step of coating the first film with a second film, the second film embedding at least one part of the plurality of wires over a second height; a step of removing the second film, the part of the wires of the plurality of wires embedded in the second film being removed at the same time as the second film, a mechanical stress between the first film and the second film being exerted during the removal step.

Abstract: A method for orienting elongated objects arranged on the surface of a substrate, the elongated objects extending according to an initial orientation, the method including depositing on the surface of the substrate at least one layer of a soft material covering at least partially a portion of the elongated objects, and applying a mechanical stress on at least one portion of the layer of soft material in such a way as to modify the orientation of at least one portion of the elongated objects.

Abstract: The invention relates to a method for manufacturing an optoelectronic device (50) including wire-like, conical, or frustoconical semiconductor elements (20) predominantly comprising a III-V compound. Each semiconductor element extends along an axis and includes a portion (54), the side surfaces (55) of which are covered with a shell (56) including at least one active region (31), wherein the portions are created by continuous growth in a reactor, and wherein the temperature in the reactor varies in an uninterrupted manner from a first temperature value that favors growth of first crystallographic planes perpendicular to said axis, to a second temperature value that is strictly lower than the first temperature value and favors growth of second crystallographic planes parallel to said axis.

Abstract: A method for homogenizing the height of a plurality of wires from the plurality of wires erected on a face of a substrate, the method including a first step of coating the face of the substrate including the plurality of wires with a first film, the first film embedding the plurality of wires over a first height; a second step of coating the first film with a second film, the second film embedding at least one part of the plurality of wires over a second height; a step of removing the second film, the part of the wires of the plurality of wires embedded in the second film being removed at the same time as the second film, a mechanical stress between the first film and the second film being exerted during the removal step.

Abstract: A method for orienting elongated objects arranged on the surface of a substrate, the elongated objects extending according to an initial orientation, the method including depositing on the surface of the substrate at least one layer of a soft material covering at least partially a portion of the elongated objects, and applying a mechanical stress on at least one portion of the layer of soft material in such a way as to modify the orientation of at least one portion of the elongated objects.

Abstract: A method of selective growth without catalyst on a semi-conducting structure. According to the method, which is applicable in electronics in particular: a semi-conducting structure is formed from first gaseous or molecular flows; at a same time or subsequently, at least one second gaseous or molecular flow is added thereto, to selectively in situ grow a dielectric layer on the structure; and then another semi-conducting structure is grown thereon from third gaseous or molecular flows.

Abstract: A method of selective growth without catalyst on a semi-conducting structure. According to the method, which is applicable in electronics in particular: a semi-conducting structure is formed from first gaseous or molecular flows; at a same time or subsequently, at least one second gaseous or molecular flow is added thereto, to selectively in situ grow a dielectric layer on the structure; and then another semi-conducting structure is grown thereon from third gaseous or molecular flows.

Abstract: A method for making a thin-film structure includes a thin film stabilized on a substrate. The structure of the thin film is defined by a material which includes at least one first chemical species. The method includes a step of inputting particles of the first chemical species into the thin film so as to compensate for the flow of vacancies from the surface of the film.

Abstract: The invention relates to a method for forming microcavities (118) of different depths in a layer (102) based on at least an amorphous or monocrystalline material, comprising at least the following steps in which: at least one shaft and/or trench is formed in the layer (102) so as to extend through one face (101) thereof, such that two sections of the shaft and/or the trench, in two different planes parallel to the face (101), are aligned in relation to one another along an alignment axis forming a non-zero angle with a normal to the plane of said face (101); and the layer (102) is annealed in a hydrogenated atmosphere so as to transform the shaft and/or trench into at least two microcavities (118).

Abstract: An electron transport device, including at least one transport layer in which at least one periodic dislocation and/or defect array is produced, and a mechanism for guiding electrons in the transport layer.

Abstract: The invention relates to a method for realizing a particle network comprising a particle depositing step, capable of self-organizing with a determined increment along a first direction, onto a substrate exhibiting a property that permits an interaction between the substrate and the particles and modulated along the first direction with a period adapted to said increment. A substantial interaction thus subsists between each of the particles and its neighboring particles along the first direction.

Abstract: A method for forming a wire in a layer based on a monocrystalline or amorphous material. The method forms two trenches in the layer, crossing through one face of the layer, separated from each other by one portion of the layer, by an etching of the layer on which is arranged an etching mask, and anneals, under hydrogenated atmosphere, the layer, the etching mask being maintained on the layer during the annealing. The depths and widths of the sections of the two trenches, and the width of a section of the portion of the layer, are such that the annealing eliminates a part of the portion of the layer, the two trenches then forming a single trench in which a remaining part of the portion of the layer forms the wire.

Abstract: The invention relates to a method for forming microcavities (118) of different depths in a layer (102) based on at least an amorphous or monocrystalline material, comprising at least the following steps in which: at least one shaft and/or trench is formed in the layer (102) so as to extend through one face (101) thereof, such that two sections of the shaft and/or the trench, in two different planes parallel to the face (101), are aligned in relation to one another along an alignment axis forming a non-zero angle with a normal to the plane of said face (101); and the layer (102) is annealed in a hydrogenated atmosphere so as to transform the shaft and/or trench into at least two microcavities (118).

Abstract: A method for forming a wire in a layer based on a monocrystalline or amorphous material. The method forms two trenches in the layer, crossing through one face of the layer, separated from each other by one portion of the layer, by an etching of the layer on which is arranged an etching mask, and anneals, under hydrogenated atmosphere, the layer, the etching mask being maintained on the layer during the annealing. The depths and widths of the sections of the two trenches, and the width of a section of the portion of the layer, are such that the annealing eliminates a part of the portion of the layer, the two trenches then forming a single trench in which a remaining part of the portion of the layer forms the wire.

Abstract: A method for making a thin-film structure includes a thin film stabilized on a substrate. The structure of the thin film is defined by a material which includes at least one first chemical species. The method includes a step of inputting particles of the first chemical species into the thin film so as to compensate for the flow of vacancies from the surface of the film.

Abstract: An electron transport device, including at least one transport layer in which at least one periodic dislocation and/or defect array is produced, and a mechanism for guiding electrons in the transport layer.

Abstract: The invention relates to a method for realizing a particle network comprising a particle depositing step, capable of self-organizing with a determined increment along a first direction, onto a substrate exhibiting a property that permits an interaction between the substrate and the particles and modulated along the first direction with a period adapted to said increment. A substantial interaction thus subsists between each of the particles and its neighboring particles along the first direction.