Abstract: An interconnection structure and methods of forming the same are described. The interconnection structure includes a dielectric layer, a dielectric material disposed over the dielectric layer, and first and second conductive features disposed in the dielectric material. The first and second conductive features each has rounded top corners, the first conductive feature has a first width and a first height, and the second conductive feature has a second width substantially less than the first width and a second height substantially the same as the first height. The structure further includes an etch stop layer disposed on the first and second conductive features and third and fourth conductive features disposed in the dielectric material and the etch stop layer. The third conductive feature is in contact with the first conductive feature, and the fourth conductive feature is in contact with the second conductive feature.

Abstract: A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.

Abstract: A device includes a molding compound, a plurality of through vias, a seal ring structure, and a protection layer. The plurality of through vias are embedded in the molding compound. The seal ring structure is over the molding compound and surrounds the through vias in a top view. The protection layer covers the seal ring and extends toward the molding compound in a cross-sectional view.

Abstract: A device includes a semiconductor chip, a molding compound, an insulating structure, an under-bump-metallurgy (UBM), a conductive ball, and a protection layer. The molding compound laterally surrounds the semiconductor chip. The insulating structure is over the semiconductor chip and the molding compound. The UBM is over the insulating structure and is electrically connected to the semiconductor chip. The conductive ball is in contact with the UBM. The protection layer extends from the UBM to the molding compound.

Abstract: A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.

Abstract: A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.

Abstract: A device includes a semiconductor chip, a molding compound, an insulating structure, an under-bump-metallurgy (UBM), a conductive ball, and a protection layer. The molding compound laterally surrounds the semiconductor chip. The insulating structure is over the semiconductor chip and the molding compound. The UBM is over the insulating structure and is electrically connected to the semiconductor chip. The conductive ball is in contact with the UBM. The protection layer extends from the UBM to the molding compound.

Abstract: A method includes forming an insulating film over a semiconductor structure, forming a sealing ring over a sidewall of the insulating film, and forming a protective layer over an exposed sidewall of the sealing ring. The semiconductor structure includes a semiconductor chip and a molding compound disposed around the semiconductor chip. The exposed sidewall of the sealing ring faces away from the sidewall of the insulating film.

Abstract: A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.

Abstract: A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.

Abstract: A method includes forming an insulating film over a semiconductor structure, forming a sealing ring over a sidewall of the insulating film, and forming a protective layer over an exposed sidewall of the sealing ring. The semiconductor structure includes a semiconductor chip and a molding compound disposed around the semiconductor chip. The exposed sidewall of the sealing ring faces away from the sidewall of the insulating film.

Abstract: A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.

Abstract: A method of manufacturing a semiconductor device includes: receiving a semiconductor structure having a chip region, a seal ring region surrounding the chip region, and a scribe region surroundingly defined around the seal ring region, the semiconductor structure including: a semiconductor chip in the chip region; and a molding compound disposed around the semiconductor chip and distributed in the chip region, the seal ring region and the scribe region; forming an insulating film over the chip region of the semiconductor structure and the seal ring region of the semiconductor structure; forming a seal ring over the seal ring region of the semiconductor structure and laterally adjacent to the insulating film, in which the seal ring has an exposed lateral surface facing away from the insulating film; and forming a protective layer that defines a substantially smooth and inclined lateral surface over the exposed lateral surface of the seal ring.

Abstract: A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.

Abstract: A method of manufacturing a semiconductor device includes: receiving a semiconductor structure having a chip region, a seal ring region surrounding the chip region, and a scribe region surroundingly defined around the seal ring region, the semiconductor structure including: a semiconductor chip in the chip region; and a molding compound disposed around the semiconductor chip and distributed in the chip region, the seal ring region and the scribe region; forming an insulating film over the chip region of the semiconductor structure and the seal ring region of the semiconductor structure; forming a seal ring over the seal ring region of the semiconductor structure and laterally adjacent to the insulating film, in which the seal ring has an exposed lateral surface facing away from the insulating film; and forming a protective layer that defines a substantially smooth and inclined lateral surface over the exposed lateral surface of the seal ring.

Abstract: A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.

Abstract: A method of forming an electrode having an electrochemical catalyst layer is disclosed, which comprises providing a substrate with a conductive layer formed on the surface of a substrate, conditioning the surface of the substrate, immersing the substrate in a solution containing polymer-capped noble metal nanoclusters dispersed therein to form a polymer-protected electrochemical catalyst layer on the conditioned surface of the substrate, and thermally treating the polymer-protected electrochemical catalyst layer at a temperature approximately below 300° C.

Abstract: A method of forming an electrode having an electrochemical catalyst layer is disclosed. The method includes etching a surface of a substrate, followed by immersing the substrate in a solution containing surfactants to form a conditioner layer on the surface of the substrate, and immersing the substrate in a solution containing polymer-capped noble metal nanoclusters dispersed therein to form a polymer-protected electrochemical catalyst layer on the conditioner layer.

Abstract: A method of forming an electrode including an electrochemical catalyst layer is disclosed, which comprises forming a graphitized porous conductive fabric layer, optionally conditioning the graphitized porous conductive fabric layer, and dipping the graphitized porous conductive fabric layer into a solution containing a plurality of polymer-capped noble metal nanoclusters dispersed therein. The polymer-capped noble metal nanoclusters as an electrochemical catalyst layer are adsorbed onto the graphitized porous conductive fabric layer. An electrochemical device with the electrode made thereby is also contemplated.

Abstract: A method of forming an electrode having an electrochemical catalyst layer is disclosed. The method includes etching a surface of a substrate, followed by immersing the substrate in a solution containing surfactants to form a conditioner layer on the surface of the substrate, and immersing the substrate in a solution containing polymer-capped noble metal nanoclusters dispersed therein to form a polymer-protected electrochemical catalyst layer on the conditioner layer.