Abstract: Efficient and effective internal material property monitoring systems and methods are presented. In one embodiment, a method for monitoring variations in an internal material property of an object comprises sensing variations in a characteristic over time and communicating information on the variations in the characteristic from within the object to a remote component, wherein the communication is wireless. The characteristic is related to an internal material property of an object and the variations are sensed from within the object. The characteristic can be related to a parameter associated with the material property. The characteristic can be one of a plurality of characteristics sensed, and the sensed variations are associated with a plurality of various material characteristics of a material in the object (e.g., material properties related to a composite material, etc.). A plurality of data points can be collected and the plurality of data points correspond to the sensing of the characteristic.

Abstract: Efficient and effective internal material property monitoring systems and methods are presented. In one embodiment, a monitoring tag device comprises a sensing component, a wireless unit, and a control component. The sensing component is configured to sense variations in a characteristic over time, wherein the characteristic is related to a material property of an object. The wireless unit is configured to communicate with a remote device, including transmitting information associated with the variations in the characteristic. The control component is coupled to the sensing component, wherein the control component is configured to control the sensing component and the wireless unit, wherein the control component also recognizes an indication of the variations in the characteristic over time.

Abstract: A network device provides a plurality of user configurable and controllable ports for supporting one or more powered devices and one or more power sources on a network, via a unique “n” port switch or similar hardware device. The network device disclosed herein allows each of the network ports to be functionally interchangeable in multiple application environments. Controller circuits and a logic unit or logic controller automatically detect changes on the ports and reconfigure voltage and/or data paths so that the external devices connected to the switch continue to be able to communicate and provide or consume power. Since all ports function in a substantially identical manner, there is no need to label the ports as either inputs or outputs, where an input port would be connected to a provider of POE power and an output would be a consumer of POE power.

Abstract: A storage information system is disclosed for keeping archival information on the individual active optoelectronic components that are used in telecommunication equipment. The system involves enclosing a nonvolatile memory chip inside the hermetic package of the active optoelectronic component. A memory chip is used to keep the relevant information about the active optoelectronic component such as serial number, part number and specifications. Sensors can also be included inside the hermetic package to monitor the operating conditions of the optoelectronic component. The information system is capable of storing information that is relevant to the component reliability such as: hours of operation, maximum current or voltage, and maximum temperature. The information storage system has the advantage that the archived information is intimately associated with the optoelectronic component thereby lessening the likelihood that information is lost or tampered with.

Abstract: A high power, single lateral mode semiconductor laser has a waveguide with regions of different widths coupled by a tapered region. The laser has a laterally confining optical waveguide having a highly reflecting first end and a second end. The optical waveguide has a first portion extending from the first end and a second portion extending from the second end. The first and second portions are coupled by a tapered waveguide. A width of the first portion is less than a width of the second portion. The first portion filters lateral optical modes higher than a fundamental lateral optical mode. An output is emitted from the second end of the optical waveguide.

Abstract: A storage information system is disclosed for keeping archival information on the individual active optoelectronic components that are used in telecommunication equipment. The system involves enclosing a nonvolatile memory chip inside the hermetic package of the active optoelectronic component. A memory chip is used to keep the relevant information about the active optoelectronic component such as serial number, part number and specifications. Sensors can also be included inside the hermetic package to monitor the operating conditions of the optoelectronic component. The information system is capable of storing information that is relevant to the component reliability such as: hours of operation, maximum current or voltage, and maximum temperature. The information storage system has the advantage that the archived information is intimately associated with the optoelectronic component thereby lessening the likelihood that information is lost or tampered with.

Abstract: The invention provides a laser package having a single-mode laser diode for emitting light; a single-mode optical fiber comprising an uncoated microlens formed on an input end of said single-mode optical fiber, the microlens optically coupled to the laser diode for receiving the light, the microlens being constructed so as to reduce a level of back reflection into the laser diode so as not to disturb an operation of the laser diode, wherein a center axis of the single-mode optical fiber is co-planar with an optical axis of the laser diode; and a grating formed in the single-mode optical fiber for providing feedback to the laser diode to stabilize the emitted light from the laser diode. The single-mode optical fiber can include a length of polarization maintaining fiber between the grating and the single-mode laser diode.

Abstract: Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Abstract: The effectiveness of reflected light to stabilize the operational characteristics of a semiconductor diode laser varies with the polarization orientation of the reflected light. Stabilization failure can occur if the polarization orientation of the reflected light is orthogonal to the polarization of the light emitted by the laser source. The use of multiple reflectors can reduce the probability of stabilization failure by arranging the reflectors to return to the laser source portions of light having polarization orientations that are statistically independent with respect to each other.

Abstract: Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Abstract: A single transverse mode semiconductor laser diode source is designed for employment in an optical transmission link comprising a transmitter module and a receiver module operable under uncooled conditions, i.e., without the need of costly cooling equipment, such as thermoelectric coolers. The optical transmission system includes both the semiconductor laser diode source and the optical receiver module that are both designed to operate uncooled under high frequencies (e.g., GHz range) over a wide temperature range without significant changes in signal bandwidth and at temperatures in excess of 125.degree. C.

Abstract: III-V arsenide-nitride semiconductor are disclosed. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V materials varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V material can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Abstract: A harmonic generator laser system which features a distributed Bragg reflector (DBR) or distributed feedback (DFB) tunable diode laser coupled to a quasi-phase matched (QPM) waveguide of optically nonlinear material. Tuning of the DBR laser may be achieved either thermally or via current injection, or both, halving the wavelength of a red laser into the visible blue spectral band. Thermal tuning may provide a coarse tuning adjustment, while injected current may provide fine tuning accessible to a user. Separately or in combination with current tuning, a modulation signal may be applied to the DBR laser for achieving an intensity modulated or a pulsed output. In another embodiment, modulation may be achieved by frequency modulation of the laser. A very compact tunable blue laser is formed. In yet another embodiment a double clad fiber amplifier is disposed between the tunable laser and the waveguide.

Abstract: Optical semiconductor devices with integrated diffraction gratings with higher quality are realized through the use of Al-free grating layers. AlGaAs/GaAs regime optical semiconductor devices, such as laser diodes or optical filters, conventionally utilize an AlGaAs grating layer that has a strong affinity for oxidation. Instead of a Al-containing layer, a quantenary, InGaAsP grating layer is utilized, lattice matched to the underlying AlGaAs/GaAs structure, substantially eliminating any problem of oxide contamination. Also, an Al-free, ternary InGaP grating layer is utilized in the InGaP/InGaAsP/GaAs material regime. The quantum well active region of these devices may also be modified to extend the gain bandwidth of operation of these devices to insure continued operation over a wider temperature range with the wavelength peak of the grating in that the wavelength peak of the grating more assuredly remains within the wavelength operating range of the device.

Abstract: An AlGaInP/GaAs laser diode is disclosed in which the active region is made up of quantum wells that are sufficiently thin (less than 5 nm thick) that the transition energy increase due to quantum confinement of the carriers becomes significant. This allows the quantum well material composition to be selected for compressive strain so that the laser operates in the TE polarization mode, while still obtaining a transition energy of from 1.9-2.0 eV for 620-650 nm laser emission. Quantum barriers have sufficient thickness to confine carriers to the quantum wells. Self-pulsation may be obtained in a heterostructure that also includes a saturable absorption layer proximate to the active region and a ridge structure transversely confining absorption produced carriers in the central section of the absorber layer, while allowing lateral carrier diffusion to side regions where carriers are allowed to leave the absorber layer.

Abstract: An optical transmission link has both a transmitter module and a receiver module operable under uncooled conditions, i.e., without the need of costly cooling equipment, such as thermoelectric coolers. The optical transmission system includes both a semiconductor laser diode source and an optical receiver module that are both designed to operate uncooled under high frequencies (e.g., GHz range) over a wide temperature range without significant changes in signal bandwidth and at temperatures in excess of 125.degree. C. Compensation is provided to reduce the effect of photodiode noise and amplifier noise. In addition, temperature compensation can be provided that provides for overall reduction in receiver noise across the bandwidth of the receiver module through maintenance of a temperature environment optimizing receiver performance.

Abstract: III-V arsenide-nitride semiconductor crystals, methods for producing such crystals and devices employing such crystals. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors.

Abstract: A harmonic generator laser system which features a distributed Bragg reflector (DBR) or distributed feedback (DFB) tunable diode laser coupled to a quasi-phasematched (QPM) waveguide of optically nonlinear material. Tuning of the DBR laser may be achieved either thermally or via current injection, or both, halving the wavelength of a red laser into the visible blue spectral band. Thermal tuning may provide a coarse tuning adjustment, while injected current may provide fine tuning accessible to a user. Separately or in combination with current tuning, a modulation signal may be applied to the DBR laser for achieving an intensity modulated or a pulsed output. In another embodiment, modulation may be achieved by frequency modulation of the laser. A very compact tunable blue laser is formed. In yet another embodiment a double clad fiber amplifier is disposed between the tunable laser and the waveguide.

Abstract: A monolithic multi-wavelength laser diode array having a composite active region of at least two dissimilar quantum well layers that are partially mixed in at least one of their constituent atomic species in at least one area of the active region. Different areas of the active region are characterized by different emission wavelengths determined by the degree of intermixing. An impurity free interdiffusion, such as vacancy enhanced interdiffusion, is used to provide the intermixing. Each area may have one or more waveguides and distributed Bragg reflector gratings tuned to the emission wavelength of the corresponding area of the active region. Each area or waveguide may also be separately pumped with an individually addressable current injection electrode. The laser output may be coupled into a ferroelectric frequency doubler integrally formed on the array substrate.

Abstract: An AlGaInP/GaAs laser diode is disclosed in which the active region is made up of quantum wells that are sufficiently thin (less than 5 nm thick) that the transition energy increase due to quantum confinement of the carriers becomes significant. This allows the quantum well material composition to be selected for compressive strain so that the laser operates in the TE polarization mode, while still obtaining a transition energy of from 1.9-2.0 eV for 620-650 nm laser emission. Quantum barriers have sufficient thickness to confine carriers to the quantum wells. Self-pulsation may be obtained in a heterostructure that also includes a saturable absorption layer proximate to the active region and a ridge structure transversely confining absorption produced carriers in the central section of the absorber layer, while allowing lateral carrier diffusion to side regions where carriers are allowed to leave the absorber layer.