Abstract: A device structure includes a layer stack that includes a first alternating stack of first insulating layers and first electrically conductive layers which overlies a base material layer, and an opening fill structure vertically extending through each layer within the layer stack and laterally enclosed by or contacted by the first alternating stack. The opening fill structure includes a first portion having a first variable width that increases linearly with a vertical distance from the base material layer, a second portion that overlies and is adjoined to the first portion and having a second variable width that decreases non-linearly with the vertical distance from the base material layer and laterally bounded by a tapered annular surface segment having a convex vertical profile, and a third portion that overlies the second portion and having a third variable width that increases linearly with the vertical distance from the base material layer.

Abstract: A ferrite sinter magnet has a ferrite phase having a magnetoplumbite-type crystal structure, and contains at least a metal element A, a metal element R, Fe, Co, Zn, and B. The element A is at least one kind of element selected from the group consisting of Sr, Ba, Ca, and Pb, and essentially includes Ca. the element R is at least one kind selected from the group consisting of Bi and rare-earth elements including Y, and essentially includes La. Atomic ratios of the metal elements satisfy the following Expressions (1) to (5), A1-rReFexCoyZnz??(1) 0.40?r?0.70??(2) 8.20?x?9.34??(3) 0.05?y?0.50??(4) 0<z?0.20??(5) The content of Si is 0 to 0.60% by mass in terms of SiO2, and the content of B is 0.1-0.70% by mass in terms of B2O3.

Abstract: A memory device includes a lower source-level semiconductor layer, a source contact layer, and an upper source-level semiconductor layer, an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, the upper source-level semiconductor layer, and the source contact layer, and a memory opening fill structure located in the memory opening and including a memory film and a vertical semiconductor layer having a surface segment that contacts the source contact layer. In one embodiment, the upper source-level semiconductor layer may be locally thickened to provide sufficient etch resistance during formation of a lateral isolation trench. In another embodiment, a sacrificial line trench fill structure may be employed as an etch stop structure during formation of a lateral isolation trench.

Abstract: Provided is a ferrite sintered magnet including a ferrite phase having a magnetoplumbite-type crystal structure. x, y, and m satisfy the following Equations (1), (2), and (3) when composition of the ferrite sintered magnet is represented by R1-xAxFem-yCoy, where R denotes at least one kind of element selected from rare earth elements including Y and A denotes Ca or Ca and elements including at least one kind selected from Sr or Ba. The content of B in the ferrite sintered magnet is from 0.1% to 0.6% by mass in terms of B2O3. 0.2?x?0.8??(1) 0.1?y?0.

Abstract: Provided is a ferrite sintered magnet including a ferrite phase having a magnetoplumbite-type crystal structure. x, y, and m satisfy the following Equations (1), (2), and (3) when composition of the ferrite sintered magnet is represented by R1-xAxFem-yCoy, where R denotes at least one kind of element selected from rare earth elements including Y and A denotes Ca or Ca and elements including at least one kind selected from Sr or Ba. The content of B in the ferrite sintered magnet is from 0.1% to 0.6% by mass in terms of B2O3. 0.2?x?0.8??(1) 0.1?y?0.

Abstract: Provided is a ferrite sintered magnet including a ferrite phase having a magnetoplumbite-type crystal structure. x, y, and m satisfy the following Equations (1), (2), and (3) when composition of the ferrite sintered magnet is represented by R1-xAxFem-yCoy, where R denotes at least one kind of element selected from rare earth elements including Y and A denotes Ca or Ca and elements including at least one kind selected from Sr or Ba. The content of B in the ferrite sintered magnet is from 0.1% to 0.6% by mass in terms of B2O3. 0.2?x?0.8??(1) 0.1?y?0.

Abstract: A lower source-level dielectric etch-stop layer, a source-level sacrificial layer, and an upper source-level dielectric etch-stop layer are formed over a substrate. An alternating stack of insulating layers and sacrificial material layers is formed thereabove. Memory stack structures are formed through the alternating stack. Backside openings are formed through the alternating stack and into the in-process source-level material layers such that tapered surfaces are formed through the upper source-level dielectric etch-stop layer. A source cavity is formed by removing the source-level sacrificial layer, and a continuous source contact layer is formed in the source cavity and in peripheral portions of the backside openings. Portions of the continuous source contact layer overlying the tapered surfaces are removed by performing an isotropic etch process. Remaining portions of the continuous source contact layer comprise a source contact layer.

Abstract: A ferrite sintered magnet has a ferrite phase having a magnetoplumbite-type crystal structure, and contains at least a metal element A, a metal element R, Fe, Co, Zn, and B. The element A is at least one kind of element selected from the group consisting of Sr, Ba, Ca, and Pb, and essentially includes Ca. The element R is at least one kind of element selected from the group consisting of Bi and rare-earth elements including Y, and essentially includes La. Atomic ratios of the metal elements satisfy the following expressions. A1-rRrFexCoyZnz??(1) 0.40?r?0.70??(2) 8.20?x?9.34??(3) 0.05<y?0.50??(4) 0<z?0.20??(5) The content of Si is 0 to 0.60% by mass in terms of SiO2, and the content of B is 0.01 to 0.70% by mass in terms of B2O3.

Abstract: A lower source-level dielectric etch-stop layer, a source-level sacrificial layer, and an upper source-level dielectric etch-stop layer are formed over a substrate. An alternating stack of insulating layers and sacrificial material layers is formed thereabove. Memory stack structures are formed through the alternating stack. Backside openings are formed through the alternating stack and into the in-process source-level material layers such that tapered surfaces are formed through the upper source-level dielectric etch-stop layer. A source cavity is formed by removing the source-level sacrificial layer, and a continuous source contact layer is formed in the source cavity and in peripheral portions of the backside openings. Portions of the continuous source contact layer overlying the tapered surfaces are removed by performing an isotropic etch process. Remaining portions of the continuous source contact layer comprise a source contact layer.

Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. Memory stack structures extending through the alternating stack are formed. A backside trench is formed through the alternating stack. The sacrificial material layers are replaced with electrically conductive layers. An insulating spacer and the backside contact via structure are formed within the backside trench. A dielectric isolation trench is formed by removing a peripheral portion of an upper region of the backside contact via structure and an upper portion of the insulating spacer. A dielectric isolation spacer is formed in the dielectric isolation trench to prevent an electrical short between an upper portion of the backside contact via structure and the electrically conductive layers.

Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. Memory stack structures extending through the alternating stack are formed. A backside trench is formed through the alternating stack. The sacrificial material layers are replaced with electrically conductive layers. An insulating spacer and the backside contact via structure are formed within the backside trench. A dielectric isolation trench is formed by removing a peripheral portion of an upper region of the backside contact via structure and an upper portion of the insulating spacer. A dielectric isolation spacer is formed in the dielectric isolation trench to prevent an electrical short between an upper portion of the backside contact via structure and the electrically conductive layers.

Abstract: First elongated loop-shaped conductive material portions are formed over a substrate. A two-dimensional array of memory pillar structures is formed over the first elongated loop-shaped conductive material portions. Second elongated loop-shaped conductive material portions over the two-dimensional array of memory pillar structures. Each of the elongated loop-shaped conductive material potions includes a respective pair of line segments and a respective pair of end segments adjoined to ends of the respective pair of line segments. A moat trench that at least partially laterally encloses the two-dimensional array of memory pillar structures can be formed by performing an anisotropic etch process that removes parts of the first and second elongated loop-shaped conductive material portions, thereby separating each loop-shaped conductive material portion into two disjoined line segments.

Abstract: A gas scrubber includes a canister having a rotatable spiral separator which provides a non-linear path configured to be filled with modular adsorbent material portions between a gas inlet and a gas outlet.

Abstract: First elongated loop-shaped conductive material portions are formed over a substrate. A two-dimensional array of memory pillar structures is formed over the first elongated loop-shaped conductive material portions. Second elongated loop-shaped conductive material portions over the two-dimensional array of memory pillar structures. Each of the elongated loop-shaped conductive material potions includes a respective pair of line segments and a respective pair of end segments adjoined to ends of the respective pair of line segments. A moat trench that at least partially laterally encloses the two-dimensional array of memory pillar structures can be formed by performing an anisotropic etch process that removes parts of the first and second elongated loop-shaped conductive material portions, thereby separating each loop-shaped conductive material portion into two disjoined line segments.

Abstract: Provided is a ferrite sintered magnet including a ferrite phase having a magnetoplumbite-type crystal structure. x, y, and m satisfy the following Equations (1), (2), and (3) when composition of the ferrite sintered magnet is represented by R1-xAxFem-yCoy, where R denotes at least one kind of element selected from rare earth elements including Y and A denotes Ca or Ca and elements including at least one kind selected from Sr or Ba. The content of B in the ferrite sintered magnet is from 0.1% to 0.6% by mass in terms of B2O3. 0.2?x?0.8??(1) 0.1?y?0.

Abstract: A gas scrubber includes a canister having a rotatable spiral separator which provides a non-linear path configured to be filled with modular adsorbent material portions between a gas inlet and a gas outlet.