Abstract: Methods and apparatus provide for dynamically determining unit-AC paths between a plurality of processing units and a plurality of address concentrators. The unit-AC paths may be determined by configuring a plurality of selector settings of a plurality of selector circuits. The plurality of selector circuits, the plurality of selector settings and the plurality of address concentrators combine to enable a plurality of possible AC connections. The selector settings may be configured in accordance with a prioritization of the units and/or the unit-AC paths in view of a ranking of the plurality of possible AC connections. The unit-AC paths may be adjusted by reconfiguring the selector settings, such as when a priority mismatch is identified between the prioritization of the units and the ranking of AC connections. The methods and apparatus may also include updating one or more of the address concentrators regarding the current prioritization and/or selector settings in the system.

Abstract: A carbon film C containing carbon as a main component, formed on the surface of a soft base material 4, characterized in that the film C is cracked A and divided into a plurality of regions B, and an average area of respective regions (blocks) surrounded by cracks A is 0.15×10−3 mm2 to 20×10−3 mm2.

Abstract: A carbon film containing fluorine and hydrogen, wherein a spectrum determined by FT-IR (Fourier Transform Infrared) spectrum analysis exhibits such a relationship that a ratio (IR.C—F)/(IR.C—H) between a peak area (IR.C—F) in a range from 1000 cm−1-1300 cm−1 resulting from C—F bonds and a peak area (IR.C—H) in a range from 2800 cm−1 to 3100 cm−1 resulting from C—H bonds is larger than 0, and a spectrum determined by XPS (X-ray photoelectron spectrum analysis) exhibits such a relationship that a ratio (F1S/C1S) between a peak intensity resulting from F1S and a peak intensity resulting from C1S is larger than 0 and smaller than 3. A carbon film containing hydrogen and nitrogen. A carbon film containing at least one of metal, metal compound, silicon and silicon compound.

Abstract: A carbon film C containing carbon as a main component, formed on the surface of a soft base material 4, characterized in that the film C is cracked A and divided into a plurality of regions B, and an average area of respective regions (blocks) surrounded by cracks A is 0.15×10−3 mm2 to 20×10−3 mm2.