Abstract: Disclosed is a three-dimensional neuromorphic device having multiple synapses per neuron, which includes a common gate that implements a single axon, and a plurality of data storage elements that implements each of a plurality of synapses, and the plurality of data storage elements have different physical structures.

Abstract: A flame retardant resin composition that can have excellent low smoke properties includes (A) a polycarbonate resin, (B) a silicon impact modifier, and (C) a flame retardant, wherein the (B) silicon impact modifier comprises particles having a core-shell structure, and including about 60 wt % or more of a siloxane polymer, and wherein the (C) flame retardant includes a mixture of magnesium carbonate represented by Formula 1 and magnesium calcium carbonate represented by Formula 2: Mga(CO3)b(OH)2a?2b.cH2O??[Formula 1] wherein a, b and c are as defined in the detailed description; MgxCay(CO3)x+y.mH2O??[Formula 2] wherein x, y and m are as defined in the detailed description.

Abstract: A flame retardant resin composition that can have excellent low smoke properties includes (A) a polycarbonate resin, (B) a silicon impact modifier, and (C) a flame retardant, wherein the (B) silicon impact modifier comprises particles having a core-shell structure, and including about 60 wt % or more of a siloxane polymer, and wherein the (C) flame retardant includes a mixture of magnesium carbonate represented by Formula 1 and magnesium calcium carbonate represented by Formula 2: Mga(CO3)b(OH)2a?2b.cH2O ??[Formula 1] wherein a, b and c are as defined in the detailed description; MgxCay(CO3)x+y.mH2O ??[Formula 2] wherein x, y and m are as defined in the detailed description.

Abstract: The present disclosure relates to a method of etching an atomic layer, that is capable of simultaneously removing an upper surface and a side surface of an etch subject material layer by heating with a light source of a lamp when removing the atomic layer, thereby easily reducing the planar size even in the case of patterns in the scale of several nanometers.

Abstract: A thermoplastic resin composition and a molded article manufactured using the same. The thermoplastic resin composition includes: a polycarbonate resin; a rubber-modified aromatic vinyl graft copolymer; an aromatic vinyl copolymer resin; a phosphorus flame retardant; and inorganic fillers, wherein the rubber-modified aromatic vinyl graft copolymer comprises a first rubber-modified aromatic vinyl graft copolymer comprising a rubber polymer having an average particle diameter (D50) of about 100 nm to about 135 nm and a second rubber-modified aromatic vinyl graft copolymer comprising a rubber polymer having an average particle diameter (D50) of about 250 nm to about 400 nm, and a weight ratio of the first rubber-modified aromatic vinyl graft copolymer to the second rubber-modified aromatic vinyl graft copolymer ranges from about 1:0.1 to about 1:about 10. The thermoplastic resin composition can exhibit excellent properties in terms of fatigue resistance, impact resistance, and flame retardancy.

Abstract: A thermoplastic resin composition and a molded article manufactured using the same. The thermoplastic resin composition includes: a polycarbonate resin; a rubber-modified aromatic vinyl graft copolymer; an aromatic vinyl copolymer resin; a phosphorus flame retardant; and inorganic fillers, wherein the rubber-modified aromatic vinyl graft copolymer comprises a first rubber-modified aromatic vinyl graft copolymer comprising a rubber polymer having an average particle diameter (D50) of about 100 nm to about 135 nm and a second rubber-modified aromatic vinyl graft copolymer comprising a rubber polymer having an average particle diameter (D50) of about 250 nm to about 400 nm, and a weight ratio of the first rubber-modified aromatic vinyl graft copolymer to the second rubber-modified aromatic vinyl graft copolymer ranges from about 1:0.1 to about 1:about 10. The thermoplastic resin composition can exhibit excellent properties in terms of fatigue resistance, impact resistance, and flame retardancy.

Abstract: A thermoplastic resin composition includes: a base resin including a polyarylene ether resin and an aromatic vinyl polymer; a flame retardant; and an impact modifier, wherein the impact modifier is a rubber-modified vinyl graft copolymer in which an unsaturated monomer including about 95 wt % to about 99 wt % of an aromatic vinyl compound and about 1 wt % to about 5 wt % of a vinyl cyanide compound is grafted to a rubbery polymer; the base resin and the flame retardant form a continuous phase; and the impact modifier forms a dispersed phase. The thermoplastic resin composition can have excellent properties in terms of impact resistance, flame retardancy, and balance therebetween.

Abstract: A (meth)acrylic copolymer is a copolymer of a monomer mixture including a phosphorus-based (meth)acrylic monomer represented by Formula 1, and a monofunctional unsaturated monomer. The (meth)acrylic copolymer can have improved refractive index, excellent flame resistance, transparency, scratch resistance and/or environment-friendliness: wherein R1 is hydrogen or methyl, R2 is a substituted or unsubstituted C1-C20 hydrocarbon group, R3 and R4 are the same or different and are each independently a substituted or unsubstituted C6-C20 cyclic hydrocarbon group, m is an integer from 1 to 10, and n is an integer from 0 to 5.

Abstract: Disclosed herein is a television housing and a method of fabricating the same. The television housing includes a stainless steel (SUS) frame and a plastic member adjoining at least one surface of the stainless steel frame. The plastic member includes: a base resin including about 60 wt % to about 95 wt % of (A) a polycarbonate resin and about 5 wt % to about 40 wt % of (B) a rubber-modified aromatic vinyl graft copolymer resin; and about 5 parts by weight to about 25 parts by weight of (C) bondable glass fibers based on about about 100 parts by weight of the base resin including the (A) polycarbonate resin and the (B) rubber-modified aromatic vinyl graft copolymer resin, and has a tensile strength from about 70 MPa to about 130 MPa at about 23° C. The plastic member employs the bondable glass fibers, and thus can prevent whitening due to an ejector pin upon release at high temperature.

Abstract: A non-volatile memory device including a metal-insulator transition (MIT) material is provided. The non-volatile memory device includes a gate stack having a tunneling layer, a charge trap layer, a blocking layer and a gate electrode formed on a substrate, wherein at least one of the tunneling layer and the blocking layer is formed of an MIT (metal-insulator transition) material.

Abstract: Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.

Abstract: Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.

Abstract: A multi-bit non-volatile memory device and methods of operating and fabricating the same may be provided. The memory device may include a channel region formed in a semiconductor substrate, and a source and drain that form a Schottky contact with the channel region. Also, a central gate electrode may be located on a portion of the channel region, and first and second sidewall gate electrodes may be formed on the channel region along the outer sides of the central gate electrode. First and second storage nodes may be formed between the channel region and the sidewall gate electrodes.

Abstract: Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.

Abstract: A multi-bit non-volatile memory device and methods of operating and fabricating the same may be provided. The memory device may include a channel region formed in a semiconductor substrate, and a source and drain that form a Schottky contact with the channel region. Also, a central gate electrode may be located on a portion of the channel region, and first and second sidewall gate electrodes may be formed on the channel region along the outer sides of the central gate electrode. First and second storage nodes may be formed between the channel region and the sidewall gate electrodes.

Abstract: A complementary metal oxide semiconductor (CMOS) thin film transistor including a common gate, a logic device including the CMOS thin film transistor, and a method of manufacturing the CMOS thin film transistor are provided. In one embodiment, the CMOS thin film transistor includes a base substrate and a semiconductor layer formed on the base substrate. A PMOS transistor and an NMOS transistor are formed on a single semiconductor layer to intersect each other, and a common gate is formed on the intersection area. In addition, a Schottky barrier inducing material layer is formed on a source and a drain of the PMOS transistor.

Abstract: Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.

Abstract: A non-volatile memory device including a metal-insulator transition (MIT) material is provided. The non-volatile memory device includes a gate stack having a tunneling layer, a charge trap layer, a blocking layer and a gate electrode formed on a substrate, wherein at least one of the tunneling layer and the blocking layer is formed of an MIT (metal-insulator transition) material.

Abstract: In a silicon-oxide-nitride-oxide-silicon (SONOS) memory device and a method of manufacturing the same, a SONOS memory device includes a semiconductor substrate, an insulating layer deposited on the semiconductor substrate, an active layer formed on a predetermined region of the insulating layer and divided into a source region, a drain region, and a channel region, a first side gate stack formed at a first side of the channel region, and a second side gate stack formed at a second side of the channel region opposite the first side of the channel region. In the SONOS memory device, at least two bits of data may be stored in each SONOS memory device, thereby allowing the integration density of the semiconductor memory device to be increased without increasing an area thereof.

Abstract: Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.