Abstract: A metal resistor and a method for manufacturing the resistor are provided. A first insulation film is formed on a substrate, a photosensitive film is applied on the insulation film, and an insulation film pattern is formed by patterning the insulation film. After a metal thin film is formed among the insulation film pattern and on the photosensitive film, with removing the photo-sensitive film is a metal thin film pattern formed among the insulation film pattern. On the metal thin film pattern and the insulation film pattern is a second insulation film formed and at the pad region of the metal thin film pattern is a lead wire connected, after that, a metal thin film resistor is manufactured with forming a preservation film on and around the lead wire.

Abstract: A metal resistor and a method for manufacturing the resistor are provided. A first insulation film is formed on a substrate, a photosensitive film is applied on the insulation film, and an insulation film pattern is formed by patterning the insulation film. After a metal thin film is formed among the insulation film pattern and on the photosensitive film, with removing the photo-sensitive film is a metal thin film pattern formed among the insulaion film pattern. On the metal thin film pattern and the insulation film pattern is a second insulation film formed and at the pad region of the metal thin film pattern is a lead wire connected, after that, a metal thin film resistor is manufactured with forming a preservation film on and around the lead wire.

Abstract: A method and an apparatus for manufacturing a reaction bonded silicon carbide by the infiltration of molten metal by using a porous silicon carbide/carbon or carbon preform in which the molten metal is supplied to the carbon preform by capillary action through a pyro-carbon coated dense graphite feeder on which a transfer path of molten metal is defined from a molten metal supplier under an inert atmosphere, and a carbon woven fabric on which the carbon preform is placed transfers continuously the carbon preform at a constant speed and thereby infiltrates the carbon preform.The apparatus and method for manufacturing a reaction bonded silicon carbide which enable mass production of goods of various sizes and characteristics by continuously transferring the carbon preform on the carbon woven fabric and supplying the molten metal through the pyro-carbon coated graphite feeder.

Abstract: The present invention relates to a method of depositing a platinum thin-film on a silicon wafer. The method includes the steps of depositing a platinum layer on an insulating oxide layer under an oxidation atmosphere to form a mixture film consisted of platinum grains, platinum oxide grains and oxygen adhered to those grains (hereinafter, "the mixture film" to be referred as "oxygen containing platinum thin-film"); depositing an additional platinum thin-film to a desired thickness on the oxygen containing platinum thin-film under a complete inert atmosphere; and annealing the silicon substrate at a temperature of 400 to 1,300.degree. C. in order to remove oxygen present in the independent form or in platinum oxide form within the oxygen containing platinum thin-film and to stabilize the entire platinum thin-film.

Abstract: A method and an apparatus for manufacturing a reaction bonded silicon carbide by the infiltration of molten metal by using a porous silicon carbide/carbon or carbon preform in which the molten metal is supplied to the carbon preform by capillary action through a pyro-carbon coated dense graphite feeder on which a transfer path of molten metal is defined from a molten metal supplier under an inert atmosphere, and a carbon woven fabric on which the carbon preform is placed transfers continuously the carbon preform at a constant speed and thereby infiltrates the carbon preform.The apparatus and method for manufacturing a reaction bonded silicon carbide which enable mass production of goods of various sizes and characteristics by continuously transferring the carbon preform on the carbon woven fabric and supplying the molten metal through the pyro-carbon coated graphite feeder.

Abstract: The present invention relates to a method of depositing a platinum thin-film on a silicon wafer. The method includes the steps of depositing a platinum layer on an insulating oxide layer under an oxidation atmosphere to form a mixture film consisted of platinum grains, platinum oxide grains and oxygen adhered to those grains (hereinafter, "the mixture film" to be referred as "oxygen containing platinum thin-film"); depositing an additional platinum thin-film to a desired thickness on the oxygen containing platinum thin-film under a complete inert atmosphere; and annealing the silicon substrate at a temperature of 400.degree. to 1,300.degree. C. in order to remove oxygen present in the independent form or in platinum oxide form within the oxygen containing platinum thin-film and to stablize the entire platinum thin-film.