Abstract: Discussed is a laser welding apparatus including a lower jig, a laser welding unit configured to weld a metal and another metal to each other, the metal being disposed at an upper surface of a printed circuit board (PCB) disposed on the lower jig, and an upper jig configured to support at least one of at least a part of the upper surface of the PCB, at least a part of an upper surface of the metal, and at least a part of an upper surface of the another metal, wherein: the upper jig is fixed such that the vertical position of the upper jig is constant, or when the upper jig is movable upwards and downwards, the upper jig is configured to be fixed at a specific position.

Abstract: Disclosed is a semiconductor manufacturing apparatus including at least one pocket on which a passive subject on which deposition will be executed is mounted, and a carrier body having an insertion space to which the at least one pocket is detachably attached. Therefore, the semiconductor manufacturing apparatus shortens process time and reduces process expenses. The semiconductor manufacturing apparatus allows respective pockets to have different structures according to the positions of the pockets on the wafer carrier, and thus achieves uniform growth of a material on the surfaces of wafers regardless of the positions of the pockets.

Abstract: Disclosed is a semiconductor manufacturing apparatus including at least one pocket on which a passive subject on which deposition will be executed is mounted, and a carrier body having an insertion space to which the at least one pocket is detachably attached. Therefore, the semiconductor manufacturing apparatus shortens process time and reduces process expenses. The semiconductor manufacturing apparatus allows respective pockets to have different structures according to the positions of the pockets on the wafer carrier, and thus achieves uniform growth of a material on the surfaces of wafers regardless of the positions of the pockets.

Abstract: Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first semiconductor layer; a light emitting structure on one sided portion of the first semiconductor layer; a protection device structure on the other sided portion of the first semiconductor layer; and a first electrode layer on the protection device structure.

Abstract: Disclosed is a semiconductor light emitting device comprising a seed layer, a first conductive semiconductor layer into which the seed layer is partially inserted, a first electrode electrically connected to the first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, and a second electrode layer under the second conductive semiconductor layer.

Abstract: Disclosed is a semiconductor light emitting device comprising a seed layer, a first conductive semiconductor layer into which the seed layer is partially inserted, a first electrode electrically connected to the first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, and a second electrode layer under the second conductive semiconductor layer.

Abstract: Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first semiconductor layer; a light emitting structure on one sided portion of the first semiconductor layer; a protection device structure on the other sided portion of the first semiconductor layer; and a first electrode layer on the protection device structure.