Patents by Inventor Joachim Burtscher

Joachim Burtscher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thyristor having a plurality of emitter shorts in defined spacial relationship
    Patent number: 4079406
    Abstract: A thyristor device is provided with a shorted emitter structure in which the shorts are circularly formed zones of the base zone which extend through the emitter zone into electrical contact with the emitter electrode. Each of these zones is circular in cross-section and of a diameter which is less than 20.mu.m. These zones have a spacing from each other from center to center which is such that the ratio of this spacing to the diameter of a circular area is greater than 3.
    Type: Grant
    Filed: December 9, 1976
    Date of Patent: March 14, 1978
    Assignee: Siemens Aktiengesellschaft
    Inventors: Joachim Burtscher, Helmut Strack
  • Method of doping a semiconductor layer
    Patent number: 3967982
    Abstract: A semiconductor layer, such as an epitaxial layer on a suitable substrate is subjected to controlled bombardment by neutrons whereby the atoms of the semiconductor layer are converted via nuclear reaction into doping material atoms.
    Type: Grant
    Filed: July 11, 1975
    Date of Patent: July 6, 1976
    Assignee: Siemens Aktiengesellschaft
    Inventors: Heinz-Herbert Arndt, Joachim Burtscher, Gustav Fischer, Ernst Haas, Joachim Martin, Gunter Raab, Manfred Schnoeller