Abstract: There is provided a detection arrangement for detecting an attack to internal signals in a semiconductor device. The detection arrangement comprises a first input terminal, a second input terminal, and a comparison unit. The first input terminal is adapted to receive a first signal being indicative for a signal at a first stage of a driver of the semiconductor device, the driver being capable to drive signals internally to the semiconductor device. The second input terminal is adapted to receive a second signal being indicative for a signal at a second stage of the driver of the semiconductor device. The comparison unit is adapted to compare the first signal and the second signal and to determine a time period during which the signals are equal, wherein the determined time period is indicative for a potential attack, if the determined time period is above a predefined threshold.

Abstract: There is provided a detection arrangement for detecting an attack to internal signals in a semiconductor device. The detection arrangement comprises a first input terminal, a second input terminal, and a comparison unit. The first input terminal is adapted to receive a first signal being indicative for a signal at a first stage of a driver of the semiconductor device, the driver being capable to drive signals internally to the semiconductor device. The second input terminal is adapted to receive a second signal being indicative for a signal at a second stage of the driver of the semiconductor device. The comparison unit is adapted to compare the first signal and the second signal and to determine a time period during which the signals are equal, wherein the determined time period is indicative for a potential attack, if the determined time period is above a predefined threshold.

Abstract: A non-volatile memory cell (200) comprising a floating gate transistor (206) comprising a floating gate (10) positioned between a control gate (14) and a first channel region (232) and an access gate transistor (208) comprising an access gate (22) and a second channel region (234), the first channel region (232) comprising a first implant (242) with a first dosage level (234), and the second channel region comprising a second implant (244) having a second dosage level, the first dosage level being less than the second dosage level.

Abstract: The invention relates to a method and to a semiconductor device, comprising means for detecting an unauthorized access to the semiconductor device, wherein the semiconductor device carries out an initialization of the semiconductor device following detection of an unauthorized access, wherein an information item relating to the unauthorized access can be stored by the semiconductor device prior to the initialization, and wherein the stored information item relating to the unauthorized access remains intact following the initialization of the semiconductor device. It is advantageously provided that the stored information item remains intact for a predetermined period of time following disconnection of the semiconductor device from a power supply.

Abstract: In order to provide an error detection/correction circuit (100; 100?) as well as a method for detecting and/or for correcting at least one error of at least one data word, said data word comprising—information in the form of at least one information bit or at least one pay load data bit, and—redundancy in the form of at least one check bit or at least one redundant bit, wherein the number of the one or more check bits or redundant bits being supplemented to the respective data word is optimized, in particular wherein at least one physical memory space can be used in an optimized way depending on the requirements of the application, it is proposed—to perform at least one first error correction scheme being assigned to at least one first data path (30; 30?), and—to perform at least one second error correction scheme—being assigned to at least one second data path (40; 40), and—being designed for increasing the information and/or the redundancy, in particular—for increasing the number of the one or more informat

Abstract: The invention relates to a semiconductor device having a byte-erasable EEPROM memory comprising a matrix of rows and columns of memory cells. In order to provide a semiconductor device having a byte-erasable EEPROM which has a reduced chip size and increased density and which is suitable for low-power applications it is proposed according to the present invention that the memory cells each comprise a selection transistor having a selection gate and, arranged in series therewith, a memory transistor having a floating gate and a control gate, the selection transistor being further connected to a source line of the byte-erasable EEPROM memory, which source line is common for a plurality of memory cells, and the memory transistor being further connected to a bit line of the byte-erasable EEPROM memory, wherein the columns of memory cells are located in separate p-type wells separated by n-type wells.