Abstract: A semiconductor chip has at least one electrical resistor means, at least one semiconductor component arranged in the semiconductor chip, and at least one metallization for the semiconductor component on the semiconductor chip. At least one resistor means is at least partially arranged under the metallization. This permits a space requirement for the resistor means on the semiconductor chip to be reduced.

Abstract: A sucking electrode for shortening the turn-off time in a semiconductor component includes a diffusion zone of the sucking electrode, a zone adjoining the diffusion zone of the sucking electrode defining a junction therebetween, and a metal short-circuit disposed between the diffusion zone of the sucking electrode and the zone adjoining the diffusion zone of the sucking electrode. The diffusion zone of the sucking electrode is disposed inside the zone adjoining the diffusion zone of the sucking electrode. At least a portion of the junction between the diffusion zone of the sucking electrode and the zone adjoining the diffusion zone of the sucking electrode is free of metal plating.

Abstract: A component for surface mounting is fixed by means of adhesive to a surface of a member. For improving the adhesion, the fixable surface of the component includes a structure which makes it possible, first, for this fixable surface to lie flush against the surface of the member. Second, the structure of the fixable surface also makes it possible for a quantity of adhesive adequate for fixing to remain between the fixable surface of the component and the surface of the member.

Abstract: A method for limiting chippage when sawing a semiconductor wafer into individual pieces which involves providing a dielectric layer at least in some portions of the wafer surface. A border of the dielectric layer is applied to the margins of the individual parts which are to be formed on the surface of the semiconductor wafer, being applied under such conditions that the margins exert a tensile stress on the semiconductor surface. This produces a symmetrical tensile stress distribution for limiting the chippage of the semiconductor material in the sawing region on the surface of the semiconductor wafer.

Abstract: Passivation of aluminum-metallized silicon components by applying at least one silicon layer. For the purpose of the subsequent contacting, the components are annealed after the application of the silicon layer at a temperature from 480.degree. to 570.degree. C. if the silicon layer thickness exceeds 0.1 .mu.m and a temperature from 400.degree. to 500.degree. C. if the silicon layer is up to about 0.1 .mu.m thick, it being possible to omit the annealing operation if the silicon layer thickness is less than about 0.05 .mu.m.

Abstract: Case for a semiconductor component, including at least two parts, one of the parts being a cap, at least the cap being formed of a material having low hydrogen permeability and a weak catalytic effect for an oxyhydrogen gas reaction.

Abstract: Method for preparing electrically conductive layers on or in insulating layers, characterized by the feature that the conductivity of at least part of the insulating layer is increased by ion implantation.

Abstract: Stabilizing the current gain of NPN-silicon transistors by two annealing processes:a high temperature annealing process for at least 30 minutes at a temperature of 510.degree. to 590.degree. C., anda lower temperature annealing process for at least 30 minutes at a temperature of 380.degree. to 460.degree. C.

Abstract: Method for encapsulating components in cases, which includes connecting a gold wire to an aluminum surface, subsequently closing the case by welding in a vacuum, and tempering the case in a hydrogen-containing atmosphere and an encapsulation produced by the method.

Abstract: Case for a semiconductor component, including at least two parts, one of the parts being a cap, at least the cap being formed of a material having low hydrogen permeability and a weak catalytic effect for an oxyhydrogen gas reaction.