Patents by Inventor Joachim ERZ

Joachim ERZ has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SPRAY EVAPORATION OF A LIQUID RAW MATERIAL FOR PREPARATION OF SILICON DIOXIDE AND METAL OXIDES
    Publication number: 20200140282
    Abstract: The present invention relates to a process for preparing a metal oxide, comprising a) spraying a liquid raw material comprising at least one metal compound by mixing it with a gas to form an aerosol; b) forming a gaseous reaction mixture from the aerosol obtained in step a) by complete evaporation thereof; c) converting the gaseous reaction mixture obtained in step b) to metal oxide in the presence of oxygen.
    Type: Application
    Filed: June 27, 2018
    Publication date: May 7, 2020
    Applicant: Evonik Operations GmbH
    Inventors: Joachim Erz, Claudia SEVERIN, Maximilian CORNELIUS
  • Formulations comprising hydridosilanes and hydridosilane oligomers, their process of manufacture and their use
    Patent number: 10385217
    Abstract: The present invention relates to formulations comprising at least one hydridosilane of the generic formula SinH2n+2 with n=7-10 and at least one hydridosilane oligomer, to processes for preparation thereof and to the use thereof.
    Type: Grant
    Filed: June 12, 2014
    Date of Patent: August 20, 2019
    Assignee: Evonik Degussa GmbH
    Inventors: Stephan Traut, Matthias Patz, Stephan Wieber, Paul Henrich Wöbkenberg, Joachim Erz, Jutta Hessing
  • Method for producing differently doped semiconductors
    Patent number: 9887313
    Abstract: The present invention relates to a liquid-phase method for doping a semiconductor substrate, characterized in that a first composition containing at least one first dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the first composition; a second composition containing at least one second dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the second composition, where the one or more region(s) coated with the first composition and the one or more region(s) coated with the second composition are different and do not overlap significantly and where the first dopant is an n-type dopant and the second dopant is a p-type dopant or vice versa; the regions of the surface of the semiconductor substrate coated with the first composition and with the
    Type: Grant
    Filed: April 17, 2015
    Date of Patent: February 6, 2018
    Assignee: Evonik Degussa GmbH
    Inventors: Christoph Mader, Christian Guenther, Joachim Erz, Susanne Christine Martens, Jasmin Lehmkuhl, Stephan Traut, Odo Wunnicke
  • Process for producing structured coatings
    Patent number: 9865461
    Abstract: The present invention relates to a liquid-phase process for producing structured silicon- and/or germanium-containing coatings by the application to a substrate of at least one coating composition, the partial activation of the resulting coating on the coated substrate, and oxidation of non-activated coating on the substrate, to the coats produced by the process and to their use.
    Type: Grant
    Filed: June 6, 2014
    Date of Patent: January 9, 2018
    Assignee: Evonik Degussa GmbH
    Inventors: Christoph Mader, Paul Henrich Woebkenberg, Joachim Erz, Stephan Traut, Matthias Patz, Michael Coelle, Stephan Wieber, Patrik Stenner, Janette Klatt, Odo Wunnicke
  • METHOD FOR PRODUCING DIFFERENTLY DOPED SEMICONDUCTORS
    Publication number: 20170054050
    Abstract: The present invention relates to a liquid-phase method for doping a semiconductor substrate, characterized in that a first composition containing at least one first dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the first composition; a second composition containing at least one second dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the second composition, where the one or more region(s) coated with the first composition and the one or more region(s) coated with the second composition are different and do not overlap significantly and where the first dopant is an n-type dopant and the second dopant is a p-type dopant or vice versa; the regions of the surface of the semiconductor substrate coated with the first composition and with the
    Type: Application
    Filed: April 17, 2015
    Publication date: February 23, 2017
    Applicant: Evonik Degussa GmbH
    Inventors: CHRISTOPH MADER, Christian GUENTHER, Joachim ERZ, Susanne Christine MARTENS, Jasmin LEHMKUHL, Stephan TRAUT, Odo WUNNICKE
  • METHOD FOR PRODUCING STRUCTURED COATINGS, STRUCTURED COATINGS PRODUCED ACCORDING TO SAID METHOD AND USE THEREOF
    Publication number: 20160155637
    Abstract: The present invention relates to a liquid-phase process for producing structured silicon- and/or germanium-containing coatings by the application to a substrate of at least one coating composition, the partial activation of the resulting coating on the coated substrate, and oxidation of non-activated coating on the substrate, to the coats produced by the process and to their use.
    Type: Application
    Filed: June 6, 2014
    Publication date: June 2, 2016
    Applicant: EVONIK INDUSTRIES AG
    Inventors: Christoph MADER, Paul Henrich WOEBKENBERG, Joachim ERZ, Stephan TRAUT, Matthias PATZ, Michael COELLE, Stephan WIEBER, Patrik STENNER, Janette KLATT, Odo WUNNICKE
  • FORMULATIONS COMPRISING HYDRIDOSILANES AND HYDRIDOSILANE OLIGOMERS, THEIR PROCESS OF MANUFACTURE AND THEIR USE
    Publication number: 20160145440
    Abstract: The present invention relates to formulations comprising at least one hydridosilane of the generic formula SinH2n+2 with n=7-10 and at least one hydridosilane oligomer, to processes for preparation thereof and to the use thereof.
    Type: Application
    Filed: June 12, 2014
    Publication date: May 26, 2016
    Applicant: Evonik Degussa GmbH
    Inventors: Stephan TRAUT, Matthias PATZ, Stephan WIEBER, Paul Henrich WÖBKENBERG, Joachim ERZ