Abstract: A method for thermal annealing of amorphous surface layers on a single-crystal semiconductor base element. The amorphous surface layer is obtained by implantation of germanium or silicon ions in a single-crystal silicon base element. Finally, the amorphous layer is doped by implantation of impurities and subjected to a three-step annealing process. During the first step of this process, the interface region between the amorphous layer and the single-crystal base element is smoothed at a temperature between 400.degree. and 460.degree. C., in the second step the amorphous layer recrystallizes at a temperature between 500.degree. and 600.degree. C., and in the third step the dopants are activated in an RTA process.