Patents by Inventor Joachim Imschweiler

Joachim Imschweiler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5254484
    Abstract: A method for thermal annealing of amorphous surface layers on a single-crystal semiconductor base element. The amorphous surface layer is obtained by implantation of germanium or silicon ions in a single-crystal silicon base element. Finally, the amorphous layer is doped by implantation of impurities and subjected to a three-step annealing process. During the first step of this process, the interface region between the amorphous layer and the single-crystal base element is smoothed at a temperature between 400.degree. and 460.degree. C., in the second step the amorphous layer recrystallizes at a temperature between 500.degree. and 600.degree. C., and in the third step the dopants are activated in an RTA process.
    Type: Grant
    Filed: September 24, 1991
    Date of Patent: October 19, 1993
    Assignee: Telefunken electronic GmbH
    Inventors: Heinz-Achim Hefner, Joachim Imschweiler, Michael Seibt