Abstract: An overload monitoring device for an electrical system including a measuring device for current and/or voltage, a time measuring device and an evaluation device connected to the measuring device and the time measuring device being provided, the evaluation device being designed for generating parameters from measured values of the measuring device and/or for detecting an overload situation based on the measured values and/or the parameters using time data of the time measuring device. A method for overload monitoring of an electrical system is also described, measured values being determined for a current and/or a voltage of the electrical system; time data being determined; parameters based on the measured values being generated; and an overload situation being detected based on the measured values and/or the parameters using the time data.

Abstract: A control for an electrical consumer includes a first switching device for connecting an output for the consumer to a first potential, a second switching device for connecting the output to a second potential, a control device for activating the switching devices, a first scanning device for providing a first signal as a function of a switching state of the first switching device, a second scanning device for providing a second signal as a function of a switching state of the second switching device, and a comparator device for determining a difference in the switch-on times of the switching devices on the basis of the determined signals.

Abstract: An electrical circuit device includes a semiconductor component which has power terminals and a control terminal electrically insulated from the power terminals, for applying a control voltage, and a control terminal contact surface for contacting the control terminal for measuring the electrical behavior of the semiconductor component. A connection device is provided, via which the control terminal is electrically connectable to a series device, the connection device being transferable from a nonconductive state into a conductive state, in which the control terminal is connected to the series device.

Abstract: A method and a circuit system for operating an electric machine are presented. The method is carried out in particular in a starting phase, a current being limited using a controllable resistor, the controllable resistor being implemented by at least one semiconductor switch, which is controlled using a clocked signal, and the signal being set in such a way that in shutdown phases, the at least one semiconductor switch is not completely shut down.

Abstract: A method and a circuit system for operating an electric machine are presented. The method is carried out in particular in a starting phase, a current being limited using a controllable resistor, the controllable resistor being implemented by at least one semiconductor switch, which is controlled using a clocked signal, and the signal being set in such a way that in shutdown phases, the at least one semiconductor switch is not completely shut down.

Abstract: A power switch component having a semiconductor switch and a contacting applied to a contact zone of the semiconductor switch is introduced. The contact zone has a semiconductor layer and a metal plating applied to the semiconductor layer. The semiconductor layer has at least one conducting region and at least one non-conducting region situated directly under the metal plating.

Abstract: An electrical circuit device includes a semiconductor component which has power terminals and a control terminal electrically insulated from the power terminals, for applying a control voltage, and a control terminal contact surface for contacting the control terminal for measuring the electrical behavior of the semiconductor component. A connection device is provided, via which the control terminal is electrically connectable to a series device, the connection device being transferable from a nonconductive state into a conductive state, in which the control terminal is connected to the series device.

Abstract: A power switch component having a semiconductor switch and a contacting applied to a contact zone of the semiconductor switch is introduced. The contact zone has a semiconductor layer and a metal plating applied to the semiconductor layer. The semiconductor layer has at least one conducting region and at least one non-conducting region situated directly under the metal plating.

Abstract: A semiconductor emitter structure for emitting charge carriers of a first conductivity type in a base volume of a second conductivity type material neighbored to the emitter structure in a vertical direction, includes multiple emitter volumes of first conductivity tape material having a predetermined lateral dimension in a lateral direction perpendicular to the vertical direction. The emitter volumes are, in the lateral direction, neighbored by semiconductor volumes of second conductivity type material, wherein the predetermined lateral dimension is such that space charges created by second conductivity type carriers laterally diffusing into the emitter volumes from the semiconductor volumes limit a maximum density of first conductivity type carriers within the emitter volumes by more than 20% as compared to emitter volumes of the same lateral dimension not neighbored by semiconductor volumes of the second conductivity type material.