Abstract: A method of processing a semiconductor substrate, including performing a first ion implantation process on the substrate, wherein a first ion beam formed of an ionized first dopant species is directed at a top surface of the substrate and is blocked from a first portion of the substrate while being allowed to implant a second portion of the substrate, and performing a second ion implantation process on the substrate, wherein a second ion beam formed of an ionized second dopant species is directed at the top surface of the substrate and is blocked from the first portion of the substrate while being allowed to implant the second portion of the substrate, wherein an effect of the second ion implantation process on an oxidation rate of the second portion counteracts an effect of the first ion implantation process on the oxidation rate of the second portion.

Abstract: A method of processing a semiconductor substrate, including performing a first ion implantation process on the substrate, wherein a first ion beam formed of an ionized first dopant species is directed at a top surface of the substrate and is blocked from a first portion of the substrate while being allowed to implant a second portion of the substrate, and performing a second ion implantation process on the substrate, wherein a second ion beam formed of an ionized second dopant species is directed at the top surface of the substrate and is blocked from the first portion of the substrate while being allowed to implant the second portion of the substrate, wherein an effect of the second ion implantation process on an oxidation rate of the second portion counteracts an effect of the first ion implantation process on the oxidation rate of the second portion.

Abstract: A finFET device includes an n-doped source and/or drain extension that is disposed between a gate spacer of the finFET and a bulk semiconductor portion of the semiconductor substrate on which the n-doped source or drain extension is disposed. The n-doped source or drain extension is formed by a selective epitaxial growth (SEG) process in a cavity formed proximate the gate spacer.

Abstract: A finFET device includes an n-doped source and/or drain extension that is disposed between a gate spacer of the finFET and a bulk semiconductor portion of the semiconductor substrate on which the n-doped source or drain extension is disposed. The n-doped source or drain extension is formed by a selective epitaxial growth (SEG) process in a cavity formed proximate the gate spacer.

Abstract: The present invention provides novel marker genes for the specific identification and characterization of human suppressive and/or regulatory T cells including natural, adaptive, and expanded CD4+CD25+FOXP3+ T cells in healthy individuals as well as tumor patients or patients with autoimmune diseases.

Abstract: A method of forming members of fiber reinforced thermoplastic members via molding, the members including at least one hollow chamber, formed by water injection into the melt in the mold, to stiffen the finished member. The thermoplastic is preferably selected from a group comprising polypropylene, Nylon, PET, ABS, TPO, and thermoplastic polyurethane, while the reinforcing fibers are preferably selected from a group comprising glass, aramid, carbon, and natural fibers. Preferably, the extruded melt is produced such that the average length of the reinforcing fibers is less than four millimeters.

Abstract: A method for the identification of regulatory T cells based on the diminished abundance or even absence of the global gene regulator SATB1 in such regulatory T cells. In particular, the invention relates to a method utilizing ligands that specifically bind to SATB1 for identifying regulatory T cells which are cells showing a reduced binding to said ligand. Such method is suitable for quality determination of a regulatory T cell population. A kit or diagnostic composition for such method is also disclosed.

Abstract: An improved method of doping a workpiece is disclosed. In this method, a film comprising the species to be implanted is introduced to the surface of a planar or three-dimensional workpiece. This film can be grown using CVD, a bath or other means. The workpiece with the film is then subjected to ion bombardment to help drive the dopant into the workpiece. This ion bombardment is performed at elevated temperatures to reduce crystal damage and create a more abrupt doped region.

Abstract: A method of forming members of fiber reinforced thermoplastic members via molding, the members including at least one hollow chamber, formed by water injection into the melt in the mold, to stiffen the finished member. The thermoplastic is preferably selected from a group comprising polypropylene, Nylon, PET, ABS, TPO, and thermoplastic polyurethane, while the reinforcing fibers are preferably selected from a group comprising glass, aramid, carbon, and natural fibers. Preferably, the extruded melt is produced such that the average length of the reinforcing fibers is less than four millimeters.

Abstract: The present invention provides novel marker genes for the specific identification and characterization of human suppressive and/or regulatory T cells including natural, adaptive, and expanded CD4+CD25+FOXP3+ T cells in healthy individuals as well as tumor patients or patients with autoimmune diseases.

Abstract: The invention relates to novel heteroaryl substituted acetone derivatives which inhibit the enzyme phospholipase A2, pharmaceutical preparations containing these compounds and a method of producing these compounds.

Abstract: A method of producing an antenna structure for an automotive vehicle comprising the steps of providing a substrate element and arranging the antenna structure on one surface of the substrate element.

Abstract: The invention relates to novel heteroaryl substituted acetone derivatives which inhibit the enzyme phospholipase A2, pharmaceutical preparations containing these compounds and a method of producing these compounds.

Abstract: A roof module of a motor vehicle, wherein the roof module is manufactured from a plastic and a roof box device is integrally formed with the roof module in one piece.

Abstract: A roof module of a motor vehicle with at least one securing device for a roof carrier system, the securing device being formed in one piece with the roof module.

Abstract: A method of producing an antenna structure for an automotive vehicle comprising the steps of providing a substrate element and arranging the antenna structure on one surface of the substrate element.

Abstract: A roof module of a motor vehicle, wherein the roof module is manufactured from a plastic and a roof box device is integrally formed with the roof module in one piece.

Abstract: A roof module of a motor vehicle with at least one securing device for a roof carrier system, the securing device being formed in one piece with the roof module.

Abstract: We have found that under certain prescribed conditions a co-implantation process can be effective in increasing the electrical activation of implanted dopant ions. In accordance with one aspect of our invention, a method of making a semiconductor device includes the steps of providing a single crystal semiconductor body, implanting vacancy-generating, ions into a preselected region of the body, implanting dopant ions into the preselected region, the dopant implant forming interstitial defects in the body, and annealing the body to electrically activate the dopant ions. Importantly, in our method the vacancy-generating implant introduces vacancy defects into the preselected region that are effective to annihilate the interstitial defects. In addition, process steps that amorphize the surface of the implanted region are avoided, and the dose of the vacancy-generating implant is made to be greater than that of the dopant implant.

Abstract: We have found that under certain prescribed conditions a co-implantation process can be effective in increasing the electrical activation of implanted dopant ions. In accordance with one aspect of our invention, a method of making a semiconductor device includes the steps of providing a single crystal semiconductor body, implanting vacancy-generating ions into a preselected region of the body, implanting dopant ions into the preselected region, the dopant implant forming interstitial defects in the body, and annealing the body to electrically activate the dopant ions. Importantly, in our method the vacancy-generating implant introduces vacancy defects into the preselected region that are effective to annihilate the interstitial defects. In addition, process steps that amorphize the surface of the implanted region are avoided, and the dose of the vacancy-generating implant is made to be greater than that of the dopant implant.