Abstract: Structures for a ferroelectric field-effect transistor and methods of forming a structure for a ferroelectric field-effect transistor. The structure comprises a gate stack having a ferroelectric layer, a first conductor layer, and a second conductor layer positioned in a vertical direction between the first conductor layer and the ferroelectric layer. The first conductor layer comprises a first material, the second conductor layer comprises a second material different from the first material, and the second conductor layer is in direct contact with the ferroelectric layer.

Abstract: An illustrative method includes providing a semiconductor structure. The semiconductor structure includes an active region and an electrically insulating structure. The active region includes a source region, a channel region and a drain region. The electrically insulating structure includes a recess over the channel region. A work function adjustment layer is deposited over the semiconductor structure. A portion of the work function adjustment layer is deposited at a bottom surface of the recess. The work function adjustment layer includes at least one material other than titanium nitride. A titanium nitride pre-wetting layer is deposited over the work function adjustment layer. A titanium wetting layer is deposited directly on the titanium nitride pre-wetting layer. After the deposition of the titanium wetting layer, the recess is filled with aluminum.

Abstract: A frame element (10; 10?) for use in an aircraft component assembly system (46) is attachable to an aircraft structure (36) and comprises at least one fastening device for fastening at least one aircraft interior component (34) or at least one insulation pack (52) to the frame element (10; 10?). An aircraft component assembly system (46) comprises a plurality of such frame elements (10; 10?). In a method of fitting a component (34, 52) in an aircraft, a frame element (10; 10?) is provided. At least one interior component (34) or at least one insulation pack (52) is fastened to the frame element (10; 10?). Then the frame element (10; 10?) having the at least one interior component (34) or the at least one insulation pack (52) fastened thereto is attached to an aircraft structure (36).

Abstract: The present disclosure provides a semiconductor device comprising a substrate, an undoped HfO2 layer formed over the substrate and a TiN layer formed on the HfO2 layer. Herein, the undoped HfO2 layer is at least partially ferroelectric. In illustrative methods for forming a semiconductor device, an undoped amorphous HfO2 layer is formed over a semiconductor substrate and a TiN layer is formed on the undoped amorphous HfO2 layer. A thermal annealing process is performed for at least partially inducing a ferroelectric phase in the undoped amorphous HfO2 layer.

Abstract: The present disclosure provides a semiconductor device comprising a substrate, an undoped HfO2 layer formed over the substrate and a TiN layer formed on the HfO2 layer. Herein, the undoped HfO2 layer is at least partially ferroelectric. In illustrative methods for forming a semiconductor device, an undoped amorphous HfO2 layer is formed over a semiconductor substrate and a TiN layer is formed on the undoped amorphous HfO2 layer. A thermal annealing process is performed for at least partially inducing a ferroelectric phase in the undoped amorphous HfO2 layer.

Abstract: Generally, the subject matter disclosed herein relates to modern sophisticated semiconductor devices and methods for forming the same, wherein a reduced threshold voltage (Vt) may be achieved in HK/MG transistor elements that are manufactured based on replacement gate electrode integrations. One illustrative method disclosed herein includes forming a first metal gate electrode material layer above a gate dielectric material layer having a dielectric constant of approximately 10 or greater. The method further includes exposing the first metal gate electrode material layer to an oxygen diffusion process, forming a second metal gate electrode material layer above the first metal gate electrode material layer, and adjusting an oxygen concentration gradient and a nitrogen concentration gradient in at least the first metal gate electrode material layer and the gate dielectric material layer.

Abstract: The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.

Abstract: The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.

Abstract: An aircraft component assembly system for the assembly of an interior component, a pipe or an electric line in an aircraft includes at least one arc-shaped frame element, a connection element that extends between a first and a second end of the frame element, and a fastening apparatus for fastening the interior component, the pipe or the electric line to the frame element or the connection element. The system also includes a first guide device that is provided on the frame element or the connection element and is devised to interact with a second guide device, which is complementary to the first guide device and provided on an aircraft structure, in such a way that the aircraft component assembly system is connectable to the aircraft structure in a manner displaceable relative to the aircraft structure.

Abstract: Generally, the present disclosure is directed work function adjustment in high-k metal gate electrode structures. In one illustrative embodiment, a method is disclosed that includes removing a placeholder material of a first gate electrode structure and a second gate electrode structure, and forming a first work function adjusting material layer in the first and second gate electrode structures, wherein the first work function adjusting material layer includes a tantalum nitride layer. The method further includes removing a portion of the first work function adjusting material layer from the second gate electrode structure by using the tantalum nitride layer as an etch stop layer, removing the tantalum nitride layer by performing a wet chemical etch process, and forming a second work function adjusting material layer in the second gate electrode structure and above a non-removed portion of the first work function adjusting material layer in the first gate electrode structure.

Abstract: In a replacement gate approach, one work function metal may be provided in an early manufacturing stage, i.e., upon depositing the gate layer stack, thereby reducing the number of deposition steps required in a later manufacturing stage. Consequently, the further work function metal and the electrode metal may be filled into the gate trenches on the basis of superior process conditions compared to conventional replacement gate approaches.

Abstract: The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.

Abstract: Generally, the subject matter disclosed herein relates to modern sophisticated semiconductor devices and methods for forming the same, wherein a reduced threshold voltage (Vt) may be achieved in HK/MG transistor elements that are manufactured based on replacement gate electrode integrations. One illustrative method disclosed herein includes forming a first metal gate electrode material layer above a gate dielectric material layer having a dielectric constant of approximately 10 or greater. The method further includes exposing the first metal gate electrode material layer to an oxygen diffusion process, forming a second metal gate electrode material layer above the first metal gate electrode material layer, and adjusting an oxygen concentration gradient and a nitrogen concentration gradient in at least the first metal gate electrode material layer and the gate dielectric material layer.

Abstract: During a manufacturing sequence for forming a sophisticated high-k metal gate structure, a cover layer, such as a silicon layer, may be deposited on a metal cap layer in an in situ process in order to enhance integrity of the metal cap layer. The cover layer may provide superior integrity during the further processing, for instance in view of performing wet chemical cleaning processes and the subsequent deposition of a silicon gate material.

Abstract: In a replacement gate approach in sophisticated semiconductor devices, a tantalum nitride etch stop material may be efficiently removed on the basis of a wet chemical etch recipe using ammonium hydroxide. Consequently, a further work function adjusting material may be formed with superior uniformity, while the efficiency of the subsequent adjusting of the work function may also be increased. Thus, superior uniformity, i.e., less pronounced transistor variability, may be accomplished on the basis of a replacement gate approach in which the work function of the gate electrodes of P-channel transistors and N-channel transistors is adjusted after completing the basic transistor configuration.

Abstract: When forming sophisticated high-k metal gate electrode structures, for instance on the basis of a replacement gate approach, superior interface characteristics may be obtained on the basis of using a thermally grown base material, wherein the electrically effective thickness may be reduced on the basis of a low temperature anneal process. Consequently, the superior interface characteristics of a thermally grown base material may be provided without requiring high temperature anneal processes, as are typically applied in conventional strategies using a very thin oxide layer formed on the basis of a wet oxidation chemistry.

Abstract: A frame element for use in an aircraft air-conditioning system is attachable to an aircraft structure and includes at least one strut which is formed to at least in sections as a hollow cylinder, wherein an air inlet connection of the at least one-section-wise hollow cylindrically formed strut of the frame element is connectable to an air outlet duct of an aircraft air-conditioning unit, and an air outlet connection of the at least one section-wise hollow cylindrically formed strut of the frame element is connectable to an air outlet opening terminating in a cabin region of an aircraft.

Abstract: A frame element (10) for use in an aircraft component installation system (46) is attachable to an aircraft structure (36) and comprises a storage bin fastening device which is designed to fasten a storage bin (26) at various positions on the frame element (10). A storage bin (26) for use in an aircraft comprises a complementary device to the storage bin fastening device of the frame element (10), in order to fasten the storage bin (26) at various positions on the frame element (10). In a method for the installation of a storage bin (26) in an aircraft a frame element (10) is provided. A storage bin (26) is fastened in a desired position on the frame element (10). The frame element (10) is attached to an aircraft structure (36).

Abstract: In a replacement gate approach, one work function metal may be provided in an early manufacturing stage, i.e., upon depositing the gate layer stack, thereby reducing the number of deposition steps required in a later manufacturing stage. Consequently, the further work function metal and the electrode metal may be filled into the gate trenches on the basis of superior process conditions compared to conventional replacement gate approaches.

Abstract: In a replacement gate approach, the oxygen contents of a cap material may be increased, thereby providing more stable characteristics of the cap material itself and of the high-k dielectric material. Consequently, upon providing a work function adjusting metal species at a very advanced manufacturing stage, corresponding additional treatments may be reduced in number or may even be completely avoided, while at the same time threshold voltage variations may be reduced.