Abstract: The invention relates to a laser diode assembly for producing single-mode, tunable laser radiation. The laser diode assembly comprises a laser diode (4) and an external resonator (10), which is coupled thereto and comprises a resonator minor (12) and a wavelength-selective optical reflective element (14) having a diffractive surface. The resonator minor is mounted for rotation about a pivot axis (16) and can be selectively rotated about the pivot axis by means of a deflecting device.

Abstract: In a laser diode arrangement for generating single mode laser radiation including a broad area laser diode having a rear facet and a front facet and forming a first resonator and an external second resonator, which is coupled to the first resonator by way of an optical transmission component and a wave-length selective optical reflection element, such that the laser light emitted from the broad area laser diode is coupled back into the first resonator, the optical transmission component is a rotational symmetrical collimator lens which is so arranged and oriented that the laser light emitted from the broad area laser diode is collimated in a spatial direction normal to the epitaxial plane of the laser diode.

Abstract: In a laser diode arrangement for generating single mode tunable laser radiation wherein the laser diode forms a first resonator and has rear and front facets and a second external resonator is coupled to the first resonator, and an optical transmission component and a wavelength selective optical reflection element are arranged in the laser light path from the laser diode for directing part of the laser light into the external resonator and coupling it back into the first resonator, means are provided for changing the coupling quality of the first resonator to the external, second resonator.

Abstract: In a laser diode arrangement for generating single mode tunable laser radiation wherein the laser diode forms a first resonator and has rear and front facets and a second external resonator is coupled to the first resonator, and wherein an optical transmission component and a wavelength selective optical reflection element are arranged in the laser light path from the laser diode for directing laser light into the external resonator and coupling it back into the first resonator, means are provided for uncoupling the laser radiation from the first resonator by way of the rear facet of the laser diode, the rear facet and the optical reflection element having a reflectivity ratio of less than 1.

Abstract: In a process and apparatus for coating the front and/or rear facets of semiconductor laser diodes with antireflection layers of minimal reflectivity, the coating material is deposited on the facets while at least one laser parameter is monitored, in-situ, for determining the coating thickness of the individual antireflection layers resulting in the minimum reflectivity of the coating and the respective coating procedure is terminated when the laser parameter indicates that such coating thickness has been reached.

Abstract: In a process and apparatus for coating the front and/or rear facets of semiconductor laser diodes with antireflection layers of minimal reflectivity, the coating material is deposited on the facets while at least one laser parameter is monitored, in-situ, for determining the coating thickness of the individual antireflection layers resulting in the minimum reflectivity of the coating and the respective coating procedure is terminated when the laser parameter indicates that such coating thickness has been reached.

Abstract: In a process and apparatus for coating the front and/or rear facets of semiconductor laser diodes with antireflection layers of minimal reflectivity, the coating material is deposited on the facets while at least one laser parameter is monitored, in-situ, for determining the coating thickness of the individual antireflection layers resulting in the minimum reflectivity of the coating and the respective coating procedure is terminated when the laser parameter indicates that such coating thickness has been reached.

Abstract: In a tuning arrangement for a semiconductor diode laser which includes, in a Littman arrangement, an external resonator, an optical collimator lens system and an optical refraction grid, a tuning arm is supported on a tuning table so as to be pivotable about a pivot axis and a resonator end mirror is mounted on the tuning arm and adjustment means are provided for adjusting the position of the tuning arm and of the distance of the end mirror surface plane from the pivot axis of the tuning arm and the refraction grid is supported so as to be pivotally and laterally adjustable for the adjustment of the distance between the grid surface plane and the pivot axis of the tuning arm to permit compensation of the chromatic dispersion of higher than the first order.