Patents by Inventor Joachim Scherb

Joachim Scherb has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7054527
    Abstract: In an optical or optoelectronic module (1) an intermediate medium (4, 10) whose optical index decreases with temperature is introduced into the optical path (7) between a laser diode (9) and an optical fiber (5). This compensates, by passive means, the power losses of the laser emission due to the increase in operating temperature by improving the transmission between the diode (9) and the fiber (5). The intermediate medium (4, 10) is preferably deposited in the form of a capsule (10) enveloping the diode (9) and the end of the fiber (5). This achieves, by passive means, a transmitted power that is independent of the operating temperature.
    Type: Grant
    Filed: January 17, 2002
    Date of Patent: May 30, 2006
    Assignee: Avanex Corporation
    Inventors: Bruno Fernier, Sylvaine Kerboeuf, Jean-Marc Rainsant, Francois Boubal, Alwin Göth, Joachim Scherb
  • Publication number: 20030179463
    Abstract: In an optical or optoelectronic module (1) an intermediate medium (4, 10) whose optical index decreases with temperature is introduced into the optical path (7) between a laser diode (9) and an optical fiber (5). This compensates, by passive means, the power losses of the laser emission due to the increase in operating temperature by improving the transmission between the diode (9) and the fiber (5). The intermediate medium (4, 10) is preferably deposited in the form of a capsule (10) enveloping the diode (9) and the end of the fiber (5).
    Type: Application
    Filed: January 21, 2003
    Publication date: September 25, 2003
    Inventors: Bruno Fernier, Sylvaine Kerboeuf, Jean-Marc Rainsant, Francois Boubal, Alwin Goth, Joachim Scherb
  • Patent number: 5248635
    Abstract: In a method of forming and passivating device regions in III-V semiconductor substrates, a substrate surface is pretreated in a halogen-carbon plasma prior to depositing of insulating or passivating layers. Devices produced by pretreating the substrate surface have considerably better electrical values than devices fabricated without this pretreatment. In particular, devices fabricated with this pretreatment have a low reverse current (dark current).
    Type: Grant
    Filed: May 29, 1991
    Date of Patent: September 28, 1993
    Assignee: Alcatel N.V.
    Inventors: Jamal Bouayad-Amine, Wolfgang Kuebart, Joachim Scherb
  • Patent number: 5136977
    Abstract: An apparatus is disclosed for the application of dielectric films to a surface according to the so-called PECVD (plasma enhanced chemical vapor deposition) process.By means of a shield (T) disposed in a simple parallel plate reactor, direct contact of the surfaces (PR) to be coated with the plasma, and thus damage to the resulting films due to the action of the plasma is avoided.If the shield is in a movable arrangement, it can be removed during the coating process or its position can be changed. It then becomes possible to apply layers alternatingly with the use of the shield, or in a time saving manner, in direct contact with the plasma.
    Type: Grant
    Filed: May 15, 1990
    Date of Patent: August 11, 1992
    Assignee: Alcatel N.V.
    Inventors: Jamal Bouayad-Amine, Wolfgang Kuebart, Joachim Scherb, Alfred Schonhofen