Patents by Inventor Joachim Wecker
Joachim Wecker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10347849Abstract: A method is provided for producing phosphorescent emitter layers composed of at least one organic fluorescent emitter F and at least one metal complex K including organic complex ligands L and at least one heavy main group metal M selected from the group consisting of In, Tl, Sn, Pb, Sn and Bi. The organic fluorescent emitter F and the metal complex K may be individually deposited as layers on a substrate and subsequently reacted with each other, wherein the coordination sphere of the heavy main group metal M is changed by receiving the organic fluorescent emitter F.Type: GrantFiled: June 1, 2015Date of Patent: July 9, 2019Assignee: SIEMENS AKTIENGESELLSCHAFTInventors: Ana-Maria Krestel, Guenter Schmid, Joachim Wecker
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Publication number: 20180182979Abstract: A method is provided for producing phosphorescent emitter layers composed of at least one organic fluorescent emitter F and at least one metal complex K including organic complex ligands L and at least one heavy main group metal M selected from the group consisting of In, Tl, Sn, Pb, Sn and Bi. The organic fluorescent emitter F and the metal complex K may be individually deposited as layers on a substrate and subsequently reacted with each other, wherein the coordination sphere of the heavy main group metal M is changed by receiving the organic fluorescent emitter F.Type: ApplicationFiled: June 1, 2015Publication date: June 28, 2018Applicant: Siemens AktiengesellschaftInventors: Ana-Maria Krestel, Guenter Schmid, Joachim Wecker
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Publication number: 20160327655Abstract: A conversion film is disclosed for converting ionizing radiation into light and for producing charge carriers via the produced light. The conversion film includes a conversion layer having a plurality of scintillator particles embedded into a binder, wherein the binder contains at least one first organic semiconductor material. A radiation detector for detecting ionizing radiation including such a conversion film is also disclosed, as well as a method for producing such a conversion film. The method for producing the conversion film may include producing a mixture from a plurality of scintillator particles and a binder containing an organic semiconductor material, producing a stratiform structure from the mixture, and forming a conversion layer by solidifying the stratiform structure.Type: ApplicationFiled: December 10, 2014Publication date: November 10, 2016Applicant: Siemens AktiengesellschaftInventors: David Hartmann, Patric Buechele, Sandro Francesco Tedde, Oliver Schmidt, Joachim Wecker
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Patent number: 7755936Abstract: An embodiment of the invention provides an integrated circuit having a cell. The cell includes a first magnetic layer structure having a first magnetization along a first axis, a non-magnetic spacer layer structure disposed above the first magnetic layer structure, and a second magnetic layer structure disposed above the non-magnetic spacer layer structure. The second magnetic layer structure has a second magnetization along a second axis that is arranged in an angle with regard to the first axis such that by changing the direction of the second magnetization, the direction of the first magnetization along the first axis can be determined.Type: GrantFiled: January 28, 2008Date of Patent: July 13, 2010Assignees: Qimonda AG, ALTIS Semiconductor, SNCInventors: Joachim Wecker, Manfred Ruehrig
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Publication number: 20090190390Abstract: An embodiment of the invention provides an integrated circuit having a cell. The cell includes a first magnetic layer structure having a first magnetization along a first axis, a non-magnetic spacer layer structure disposed above the first magnetic layer structure, and a second magnetic layer structure disposed above the non-magnetic spacer layer structure. The second magnetic layer structure has a second magnetization along a second axis that is arranged in an angle with regard to the first axis such that by changing the direction of the second magnetization, the direction of the first magnetization along the first axis can be determined.Type: ApplicationFiled: January 28, 2008Publication date: July 30, 2009Inventors: Joachim Wecker, Manfred Ruehrig
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Patent number: 7535217Abstract: The invention relates to a force sensor having a layer sequence for determining a force acting on the layer sequence along a predefined force axis. The layer sequence includes, arranged successively in a vertical direction, a first magnetic layer with a first magnetization direction, a separating layer and a second magnetic layer with a second magnetization direction. Here, the first magnetization direction is secured with respect to the layer sequence. The second magnetic layer has a magnetostriction constant that is different from zero and a uniaxial magnetic anisotropy with an anisotropy axis. The uniaxial magnetic anisotropy is generated using shape anisotropy. The second magnetization direction encloses an angle of more than 0° and less than 90° with the force axis in the quiescent state, and the anisotropy axis encloses an angle of more than 0° and less than 90° with the force axis.Type: GrantFiled: March 7, 2006Date of Patent: May 19, 2009Assignee: Infineon Technologies AGInventors: Eckard Quandt, Manfred Ruehrig, Stephan Schmitt, Bernhard Winkler, Joachim Wecker, Juergen Zimmer
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Patent number: 7436700Abstract: An MRAM memory cell is provided having a layer system made of circular-disk-shaped layers. The memory cell includes first and second magnetic layers separated by a nonmagnetic intermediate layer. The first magnetic layer exhibits hard-magnetic behavior and serves as a reference layer. The second magnetic layer exhibits soft-magnetic behavior and serves as a storage layer. An antiferromagnetic layer may be provided on the storage layer. Information is stored by the magnetization state of the storage layer. The storage layer has a weak intrinsic anisotropy that defines a magnetic preferred direction. The magnetization direction of the reference layer is parallel to the magnetization direction of a remanent magnetization in the interior of the storage layer. The remanent magnetization occurs as a result of applying an external magnetic field with a field component perpendicular to the preferred direction of the intrinsic anisotropy of the storage layer.Type: GrantFiled: June 27, 2007Date of Patent: October 14, 2008Assignee: Infineon Technologies AGInventors: Manfred Ruehrig, Joachim Wecker, Ulrich Klostermann
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Publication number: 20080002462Abstract: An MRAM memory cell is provided having a layer system made of circular-disk-shaped layers. The memory cell includes first and second magnetic layers separated by a nonmagnetic intermediate layer. The first magnetic layer exhibits hard-magnetic behavior and serves as a reference layer. The second magnetic layer exhibits soft-magnetic behavior and serves as a storage layer. An antiferromagnetic layer may be provided on the storage layer. Information is stored by the magnetization state of the storage layer. The storage layer has a weak intrinsic anisotropy that defines a magnetic preferred direction. The magnetization direction of the reference layer is parallel to the magnetization direction of a remanent magnetization in the interior of the storage layer. The remanent magnetization occurs as a result of applying an external magnetic field with a field component perpendicular to the preferred direction of the intrinsic anisotropy of the storage layer.Type: ApplicationFiled: June 27, 2007Publication date: January 3, 2008Applicant: INFINEON TECHNOLOGIES AGInventors: Manfred Ruehrig, Joachim Wecker, Ulrich Klostermann
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Patent number: 7280393Abstract: An MRAM memory cell has a layer system of circular-disk-shaped layers. The memory cell includes two magnetic layers separated by a nonmagnetic intermediate layer. The first magnetic layer or reference layer exhibits hard-magnetic behavior. The second magnetic layer or storage layer exhibits soft-magnetic behavior. Information is stored by the magnetization state of the storage layer. The storage layer has a weak intrinsic anisotropy that defines a magnetic preferred direction. The magnetization direction of the reference layer is parallel to the magnetization direction of a remnant magnetization in the interior of the storage layer. The remnant magnetization occurs as a result of applying an external magnetic field with a field component perpendicular to the preferred direction of the intrinsic anisotropy of the storage layer.Type: GrantFiled: December 7, 2006Date of Patent: October 9, 2007Assignee: Infineon Technologies AGInventors: Manfred Ruehrig, Joachim Wecker
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Patent number: 7234360Abstract: A sensor for measuring mechanical changes in length, in particular a compressive and/or tensile stress sensor, includes a sandwich system with two flat and superposed electrodes separated from each other by a tunnel element (tunnel barrier), in particular an oxide barrier, a current being set up between the electrodes and through the tunnel barrier, one electrode consisting of a magnetostrictive layer 3 which responds to elongation, and wherein the contributions of the anisotropies caused by mechanical tension are larger than those from the intrinsic anisotropies, relative changes in system resistance ?R/R larger than 10% at room temperature being attained during elongation.Type: GrantFiled: April 3, 2003Date of Patent: June 26, 2007Assignees: Stifting Caesar, Infineon Technologies AGInventors: Eckhard Quandt, Markus Lohndorf, Alfred Ludwig, Manfred Ruhrig, Joachim Wecker
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Publication number: 20070086236Abstract: An MRAM memory cell has a layer system of circular-disk-shaped layers. The memory cell includes two magnetic layers separated by a nonmagnetic intermediate layer. The first magnetic layer or reference layer exhibits hard-magnetic behavior. The second magnetic layer or storage layer exhibits soft-magnetic behavior. Information is stored by the magnetization state of the storage layer. The storage layer has a weak intrinsic anisotropy that defines a magnetic preferred direction. The magnetization direction of the reference layer is parallel to the magnetization direction of a remnant magnetization in the interior of the storage layer. The remnant magnetization occurs as a result of applying an external magnetic field with a field component perpendicular to the preferred direction of the intrinsic anisotropy of the storage layer.Type: ApplicationFiled: December 7, 2006Publication date: April 19, 2007Inventors: Manfred Ruehrig, Joachim Wecker
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Publication number: 20060251928Abstract: The invention relates to a force sensor having a layer sequence with at least two electrically conductive, magnetic layers which are arranged in succession and spaced apart from one another in a vertical direction. In each case, one separating layer is arranged between two adjacently arranged magnetic layers. Adjacently arranged magnetic layers have magnetostriction constants which are different from zero and have different signs. Each of the magnetic layers have one magnetization direction. In the quiescent state of the layer sequence, the magnetization directions of two adjacent magnetic layers are oriented essentially in parallel owing to ferromagnetic coupling, or essentially in antiparallel owing to antiferromagnetic coupling. Furthermore, the invention relates to an array for determining the mechanical deformation in a first direction of a carrier, a pressure sensor having such an array, and a method for determining a force acting on a force sensor.Type: ApplicationFiled: March 1, 2006Publication date: November 9, 2006Inventors: Eckhardt Quandt, Manfred Ruehrig, Stephan Schmitt, Bernhard Winkler, Joachim Wecker, Juergen Zimmer
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Publication number: 20060246271Abstract: The invention relates to a force sensor having a layer sequence for determining a force acting on the layer sequence along a predefined force axis. The layer sequence includes, arranged successively in a vertical direction, a first magnetic layer with a first magnetization direction, a separating layer and a second magnetic layer with a second magnetization direction. Here, the first magnetization direction is secured with respect to the layer sequence. The second magnetic layer has a magnetostriction constant that is different from zero and a uniaxial magnetic anisotropy with an anisotropy axis. The uniaxial magnetic anisotropy is generated using shape anisotropy. The second magnetization direction encloses an angle of more than 0° and less than 90° with the force axis in the quiescent state, and the anisotropy axis encloses an angle of more than 0° and less than 90° with the force axis.Type: ApplicationFiled: March 7, 2006Publication date: November 2, 2006Inventors: Eckard Quandt, Manfred Ruehrig, Stephan Schmitt, Bernhard Winkler, Joachim Wecker, Juergen Zimmer
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Patent number: 7075814Abstract: A method and apparatus for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory cell device comprising an AAF layer system and an antiferromagnetic layer that exchange-couples a layer of the AAF layer system, characterized in that, given a defined direction of magnetization of the antiferromagnetic layer, the magnetic layers of the AAF layer system are saturated in a magnetic field and, afterward, the position of the direction of the antiferromagnetic layer magnetization and the direction of the saturating magnetic field relative to one another is changed, so that they are at an angle ? of 0°<?<180° relative to one another, after which the saturating magnetic field is switched off.Type: GrantFiled: October 8, 2002Date of Patent: July 11, 2006Assignee: Infineon Technologies AGInventors: Hubert Brueckl, Ulrich Klostermann, Joachim Wecker
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Patent number: 6988414Abstract: A sensor device having a magnetostrictive force sensor is provided. To detect a force, the sensor device contains a TMR force sensor element having a magnetic detection layer of material having a magnetostriction coefficient ??|5·10?6|, a magnetically harder reference layer, and a tunnel barrier disposed between these layers. Established in the detection layer is a starting magnetization that relative to the magnetization of the reference layer, which is directed in the direction of force, forms an angle of other than 0° and thus is rotated out of its starting position under the effect of the force.Type: GrantFiled: April 29, 2004Date of Patent: January 24, 2006Assignees: Stiftung Caesar Center of Advanced European Studies and Research, Infineon Technologies AGInventors: Manfred Rührig, Joachim Wecker, Alfred Ludwig, Eckhardt Quandt, Markus Löhndorf
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Publication number: 20050174838Abstract: An MRAM memory cell has a layer system of circular-disk-shaped layers. The memory cell includes two magnetic layers separated by a nonmagnetic intermediate layer. The first magnetic layer or reference layer exhibits hard-magnetic behavior. The second magnetic layer or storage layer exhibits soft-magnetic behavior. Information is stored by the magnetization state of the storage layer. The storage layer has a weak intrinsic anisotropy that defines a magnetic preferred direction. The magnetization direction of the reference layer is parallel to the magnetization direction of a remnant magnetization in the interior of the storage layer. The remnant magnetization occurs as a result of applying an external magnetic field with a field component perpendicular to the preferred direction of the intrinsic anisotropy of the storage layer.Type: ApplicationFiled: February 7, 2005Publication date: August 11, 2005Inventors: Manfred Ruehrig, Joachim Wecker
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Patent number: 6903430Abstract: A digital magnetic memory cell device for read and/or write operations has a soft-magnetic read and/or write layer system formed of at least one soft-magnetic read and/or write layer, and a hard-magnetic reference layer system. The two systems are separated by a barrier layer. The soft-magnetic read and/or write layer is an amorphous layer with an induced or inducible uniaxial anisotropy.Type: GrantFiled: September 23, 2002Date of Patent: June 7, 2005Assignee: Infineon Technologies AGInventors: Manfred Rührig, Joachim Wecker
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Publication number: 20050105355Abstract: A method and apparatus are described for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory cell device comprising an AAF layer system and an antiferromagnetic layer that exchange-couples a layer of the AAF layer system, characterized in that, given a defined direction of magnetization of the antiferromagnetic layer, the magnetic layers of the AAF layer system are saturated in a magnetic field and, afterward, the position of the direction of the antiferromagnetic layer magnetization and the direction of the saturating magnetic field relative to one another is changed, so that they are at an angle ? of 0°<?<180 ° relative to one another, after which the saturating magnetic field is switched off.Type: ApplicationFiled: October 8, 2002Publication date: May 19, 2005Inventors: Hubert Brueckl, Ulrich Klostermann, Joachim Wecker
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Publication number: 20040216534Abstract: A sensor device having a magnetostrictive force sensor is provided. To detect a force, the sensor device contains a TMR force sensor element having a magnetic detection layer of material having a magnetostriction coefficient &lgr;≧|5·10−6|, a magnetically harder reference layer, and a tunnel barrier disposed between these layers. Established in the detection layer is a starting magnetization that relative to the magnetization of the reference layer, which is directed in the direction of force, forms an angle of other than 0° and thus is rotated out of its starting position under the effect of the force.Type: ApplicationFiled: April 29, 2004Publication date: November 4, 2004Inventors: Manfred Ruhrig, Joachim Wecker, Alfred Ludwig, Eckhardt Quandt, Markus Lohndorf
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Publication number: 20040050172Abstract: The present invention relates to a sensor measuring mechanical changes in length, in particular to a compressive and/or tensile stress sensor, comprising a sandwich system with two flat and superposed electrodes separated from each other by a tunnel element (tunnel barrier), in particular an oxide barrier, a current being set up between said electrodes and through the tunnel barrier, one electrode consisting of a magnetostrictive layer 3 which responds to elongation, and wherein the contributions of the anisotropies caused by mechanical tension are larger than those from the intrinsic anisotropies, relative changes in system resistance &Dgr;R/R larger than 10% at room temperature being attained during elongation.Type: ApplicationFiled: April 3, 2003Publication date: March 18, 2004Inventors: Eckhard Quandt, Markus Lohndorf, Alfred Ludwig, Manfred Ruhrig, Joachim Wecker