Abstract: Aspects of the present disclosure relate generally to systems and methods for use in the implementation and/or operation of quantum information processing (QIP) systems, and more particularly, to implementation of beam shaping structures to the QIP systems. Beam shaping structures can include a first prism, a mirror, and second prism arranged at distance from one another and configured to receive and reflect a laser beam to shape the beam upon exit from the structure. Such beam shaping structures provide flexibility to the QIP system by permitting easy exchange of optical elements in order to achieve different laser beam spot aspect ratios.

Abstract: The present invention refers to a method for determining an effect of one or more of pixels to be introduced into a substrate of a photolithographic mask, the photolithographic mask having one or more pattern elements, wherein the one or more pixels serve to at least partly correct one or more errors of the photolithographic mask, the method comprising: determining the effect of the one or more introduced pixels by determining a change in birefringence of the substrate of the photolithographic mask having the one or more pattern elements.

Abstract: Methods for repairing a defect of a lithographic mask with a particle beam are described. One such method can comprise the following steps: Processing the defect with the particle beam with a first set of processing parameters; processing the defect with the particle beam with a second set of processing parameters; wherein at least one parameter from the first set of processing parameters differs from the second set of processing parameters.

Abstract: The present invention relates to a method for setting at least one side wall angle of at least one pattern element of a photolithographic mask including the steps of: (a) providing at least one precursor gas; (b) providing at least one massive particle beam which induces a local chemical reaction of the at least one precursor gas; and (c) altering at least one parameter of the particle beam and/or a process parameter during the local chemical reaction in order to set the at least one side wall angle of the at least one pattern element.

Abstract: The invention relates to a device and a method for processing a microstructured component, in particular for microlithography. A device for processing a microstructured component comprises an ion beam source for applying an ion beam to at least regions of the component, wherein an ion energy of this ion beam is no more than 5 keV, and a detector for detecting particles backscattered at the component.

Abstract: Method for compensating at least one defect of a mask blank, wherein the method includes the following steps: (a) obtaining data in respect of a position of the at least one defect of the mask blank; (b) obtaining design data for pattern elements which should be produced on the mask blank; (c) determining whether the at least one defect is arranged relative to a pattern element to be produced in such a way that it has substantially no effect when exposing a wafer using the mask blank that is provided with the pattern element to be produced; and (d) otherwise, displacing the at least one defect on the mask blank in such a way that it has substantially no effect when exposing the wafer using the mask blank that is provided with the pattern element to be produced.

Abstract: The present invention refers to a method for performing an aerial image simulation of a photolithographic mask which comprises the following steps: (a) modifying an optical radiation distribution at a patterned surface of the photolithographic mask, depending on at least one first arrangement of pixels to be generated in the photolithographic mask; and (b) performing the aerial image simulation of the photolithographic mask by using the generated modified optical radiation distribution.

Abstract: The present invention refers to a method and an apparatus for determining positions of a plurality of pixels to be introduced into a substrate of a photolithographic mask by use of a laser system, wherein the pixels serve to at least partly correct one or more errors of the photolithographic mask. The method comprises the steps: (a) obtaining error data associated with the one or more errors; (b) obtaining first parameters of an illumination system, the first parameters determining an illumination of the photolithographic mask of the illumination system when processing a wafer by illuminating with the illumination system using the photolithographic mask; and (c) determining the positions of the plurality of pixels based on the error data and the first parameters.

Abstract: The present application relates to a method and an apparatus for determining a wavefront of a massive particle beam, including the steps of: (a) recording two or more images of a reference structure using the massive particle beam under different recording conditions; (b) generating point spread functions for the two or more recorded images with a modified reference image of the reference structure; and (c) performing a phase reconstruction of the massive particle beam on the basis of the generated point spread functions and the different recording conditions, for the purposes of determining the wavefront.

Abstract: An optical system includes a scanning unit, a first lens-element group including at least a first lens element, and a focusing unit which is designed to focus beams onto a focus, wherein the focusing unit includes a second lens-element group including at least a second lens element and an imaging lens. The imaging lens further includes a pupil plane and a wavefront manipulator. The wavefront manipulator is arranged in the pupil plane of the imaging lens or in a plane that is conjugate to the pupil plane, or the scanning unit of the optical system is arranged in a plane that is conjugate to the pupil plane and the wavefront manipulator is arranged upstream of the scanning unit in the light direction. The focus of the second lens-element group lies in the pupil plane of the imaging lens in all focal positions of the focusing unit.

Abstract: The present invention refers to a method for performing an aerial image simulation of a photolithographic mask which comprises the following steps: (a) modifying an optical radiation distribution at a patterned surface of the photolithographic mask, depending on at least one first arrangement of pixels to be generated in the photolithographic mask; and (b) performing the aerial image simulation of the photolithographic mask by using the generated modified optical radiation distribution.

Abstract: The invention relates to a device and a method for processing a microstructured component, in particular for microlithography. A device for processing a microstructured component comprises an ion beam source for applying an ion beam to at least regions of the component, wherein an ion energy of this ion beam is no more than 5 keV, and a detector for detecting particles backscattered at the component.

Abstract: The present invention refers to a method for determining an effect of one or more of pixels to be introduced into a substrate of a photolithographic mask, the photolithographic mask having one or more pattern elements, wherein the one or more pixels serve to at least partly correct one or more errors of the photolithographic mask, the method comprising: determining the effect of the one or more introduced pixels by determining a change in birefringence of the substrate of the photolithographic mask having the one or more pattern elements.

Abstract: The present application relates to a method and an apparatus for determining a wavefront of a massive particle beam, including the steps of: (a) recording two or more images of a reference structure using the massive particle beam under different recording conditions; (b) generating point spread functions for the two or more recorded images with a modified reference image of the reference structure; and (c) performing a phase reconstruction of the massive particle beam on the basis of the generated point spread functions and the different recording conditions, for the purposes of determining the wavefront.

Abstract: Method for compensating at least one defect of a mask blank, wherein the method includes the following steps: (a) obtaining data in respect of a position of the at least one defect of the mask blank; (b) obtaining design data for pattern elements which should be produced on the mask blank; (c) determining whether the at least one defect is arranged relative to a pattern element to be produced in such a way that it has substantially no effect when exposing a wafer using the mask blank that is provided with the pattern element to be produced; and (d) otherwise, displacing the at least one defect on the mask blank in such a way that it has substantially no effect when exposing the wafer using the mask blank that is provided with the pattern element to be produced.

Abstract: The present invention refers to a method and an apparatus for determining positions of a plurality of pixels to be introduced into a substrate of a photolithographic mask by use of a laser system, wherein the pixels serve to at least partly correct one or more errors of the photolithographic mask. The method comprises the steps: (a) obtaining error data associated with the one or more errors; (b) obtaining first parameters of an illumination system, the first parameters determining an illumination of the photolithographic mask of the illumination system when processing a wafer by illuminating with the illumination system using the photolithographic mask; and (c) to determining the positions of the plurality of pixels based on the error data and the first parameters.

Abstract: The invention relates to a method for correcting the critical dimension uniformity of a photomask for semiconductor lithography, comprising the following steps: determining a transfer coefficient as a calibration parameter, correcting the photomask by writing pixel fields, verifying the photomask corrected thus, wherein a transfer coefficient is used for verifying the corrected photomask, said transfer coefficient being obtained from a measured scattering function of pixel fields.

Abstract: Financial reporting methods and systems integrate profitability and accounting data. A universal journal entry allows user definition of relevant characteristics for a market segment. The entry appends the structure of a financial document to provide linkage to market segment characteristics. When creating the financial document including profit and loss (P&L) and balance account line items, a market segment is defined with determined characteristics stored in the line item on the basis of business process dependent rules. For example in posting information on a sales order item, sales order data may be read, and customer, product, and/or other sales order information input. Additional data can be derived on the basis of the determined master data, depending upon user needs. Embodiments allow enriched reporting (e.g., flexible market segment reporting) at the line item level, affording intuitive access to defined characteristics, e.g., drill-down into details of P&L and balance account information.

Abstract: The inventions concerns an optical system comprising a scanning unit, a first lens-element group comprising at least a first lens element, a focusing unit which is designed to focus beams onto a focus, wherein the focusing unit comprises a second lens-element group comprising at least a second lens element and an imaging lens. The imaging lens further comprises a pupil plane and a wavefront manipulator. The wavefront manipulator of the optical system is arranged in the pupil plane of the imaging lens or in a plane that is conjugate to the pupil plane of the imaging lens, or the scanning unit of the optical system is arranged in a plane that is conjugate to the pupil plane of the imaging lens and the wavefront manipulator is arranged upstream of the scanning unit in the light direction. The focus of the second lens-element group lies in the pupil plane of the imaging lens in all focal positions of the focusing unit.

Abstract: The invention relates to a method for correcting the critical dimension uniformity of a photomask for semiconductor lithography, comprising the following steps: determining a transfer coefficient as a calibration parameter, correcting the photomask by writing pixel fields, verifying the photomask corrected thus, wherein a transfer coefficient is used for verifying the corrected photomask, said transfer coefficient being obtained from a measured scattering function of pixel fields.