Abstract: An apparatus for inspecting a disk-like object comprising at least one first module for inspecting a surface of the disk-like object and at least one second module insertable in the apparatus. The at least one second module is arranged to inspect a different element of the disk-like object than the surface of the disk-like object.

Abstract: In the manufacture of integrated circuits on a wafer, it is necessary to monitor the manufacturing process by inspecting the ICs as to whether errors or defects have occurred during production. It is already known to use a scattered-light device (32) to determine whether a defect is present on the wafer. According to the present invention, defect examination is now improved in that defect-suspected regions (33) are identified using the scattered-light device (32). With a further examination system (30, 28) different from the scattered-light device (32), a determination is then made as to whether the defect-suspected regions (33) are defects. The latter can then also be classified.

Abstract: The present invention provides a method for inspecting the surface of a wafer, wherein an image of a wafer recorded by a camera is evaluated with respect to the imaging quality and is taken again, if necessary, before the wafer is evaluated by evaluating the image.

Abstract: The invention concerns a system operating unit (30) having a column (3) that is attachable by way of at least two supports (9, 10) to different points of a system housing (14). In the preferred embodiment, this column is attached laterally to the housing, the supports serving for attachment to the housing of the system. In addition, a retaining bracket (4) is connected to the column (3) in such a way that a horizontal deflection of the retaining bracket (4) about a vertical axis is possible.

Abstract: An apparatus for inspecting a disk-like object comprising at least one first module for inspecting a surface of the disk-like object and at least one second module insertable in the apparatus. The at least one second module is arranged to inspect a different element of the disk-like object than the surface of the disk-like object.

Abstract: The invention concerns an arrangement (1) for inspecting preferably unpatterned wafers, and comprises: a first optical inspection device (2) for examining reference wafers (R), which operates using image data processing methods and thereby recognizes defects on the reference wafers; a scattered-light measuring instrument (3) that is calibrated with the reference wafers (R) by defining at least one threshold value for the recognition of defects on wafers (W) to be inspected, and that comprises means (6) for recording the locations of threshold value exceedances for the wafers (W) to be inspected; and a second optical inspection device (4) for examination, only at those locations at which a threshold value exceedance is identified, of the wafers (W) to be inspected, which also comprises a classification device. The scattered-light measuring instrument (3) and the second optical inspection device (4) are arranged in one production line (P) as sequentially located stations.

Abstract: A system (100, 200, 300) for inspecting a disc-shaped object is disclosed. The system (100, 200, 300) comprises a loading unit for disc-shaped objects 4 and a device 1 for simultaneously imaging the front side and back side of the disc-shaped object 4.

Abstract: A sample P is illuminated by a measurement light beam with an incidence angle differing from 0°; light reflected therefrom is detected; intensity values are recorded and evaluated; and the opening of a field stop is imaged onto a receiving surface, thereby generating an image. In such a method, a value of “light” or “dark” is allocated to each intensity value as a function of a brightness threshold; the smallest rectangle that encloses all “light” positions on the receiving surface is determined; the geometric center point of that rectangle is determined; the position of that point is compared with the position on the receiving surface that corresponds to the geometric center point of the image generated by the field stop in the focused state; and a change in the distance between the sample and the imaging optical system corresponding to the distance between the two points is effected.

Abstract: The invention refers to a setting module for an illumination apparatus (2) of an optical instrument (1), in particular of a microscope, in which the illumination apparatus (2) comprises a light source (4), an illuminating optical system, and positioning elements (7, 8, 9, 16) with which the position of the light source (4) and/or of the illuminating optical system within the illumination apparatus (2) can be modified. The setting module (17) comprises a module housing (18) having at least one drive device (19, 20, 21, 22) and coupling members (27, 28, 29, 30) for the transfer of a drive motion to the positioning elements (7, 8, 9, 16). Also described is an illumination system comprising the illumination apparatus and the setting module. The result is to create an alignment capability with excellent functionality and user-friendliness, thereby making possible rapid positional adjustment of the light source and/or the illuminating optical system in the context of use under clean-room conditions.

Abstract: The invention concerns a method for the determination of layer thickness ranges of layers of a specimen, in which the reflection spectrum of the specimen is measured in a specified wavelength range and then smoothed, the number of extremes in the smoothed reflection spectrum is determined, and the determination of the layer thickness ranges is accomplished by comparison with the number of extremes in the modeled reflection spectra, such that for each layer the thickness in that layer is varied in steps having a predetermined increment, and a reflection spectrum is modeled. In a method of this kind, the wavelength range and the increments are specified in self-consistent fashion using a sensitivity criterion.

Abstract: The invention is based on a substrate conveying module (1) for conveying substrates into a workstation (3) for inspection, measurement, or processing of the substrates, in which on because of connecting elements (4a, b) in at least two side walls (1a, b, c) of the substrate conveying module (1) and/or in at least two side walls (3a, b, c, d) of the workstation (3), the substrate conveying module (1) can, at the installation location of the workstation (3), be flexibly connected thereto in different orientations with respect to the workstation (3) and/or can be coupled at different points to the workstation (3).

Abstract: The invention concerns a method for evaluating pattern defects on a wafer surface, comprising the following steps: acquiring the surface data of a plurality of individual image fields (4) of a series-produced wafer (1); storing the data in a reference data set and making it available as reference data for the inspection of further wafers of the same series; inspecting, successively in time, the individual image fields (4) on the surface of a wafer (1) presently being examined; retrieving from the reference data set a reference datum corresponding to the respective individual image field (4) presently being inspected; comparing the surface of each individual image field (4) currently being inspected to the corresponding reference datum; if one or more deviations are identified, subsequently classifying the deviations into critical and noncritical defects in terms of the functionality of the chip; and simultaneously updating or adding to the reference data set.

Abstract: A method and a measuring instrument for determining the position of an edge to be measured on a pattern on a substrate are described. A complete, nonlinear model intensity profile, which identifies the edge to be measured, of a model edge is ascertained and stored, and a desired edge position xk is defined therein with subpixel accuracy. A camera image of the substrate having the edge to be measured is acquired, and a one-dimensional measured intensity profile of the edge to be measured is determined therefrom. The model intensity profile is identified in the measured intensity profile with an indication of its location xm relative to a reference point. The desired position p of the edge to be measured is determined with subpixel accuracy as p=xm+xk.

Abstract: The invention relates to a holding device for wafers in an arrangement for wafer inspection, comprising two grippers (11, 12), each of which, in the closed state of the holding device (8), encloses a subsection of the wafer circumference and which are connected to a drive device (27) and, when the latter is driven, the grippers (11, 12) move away from each other for the purpose of opening the holding device (9) and move toward each other for the purpose of closing the holding device (8), and a holding arm (13), on which the two grippers (11, 12) are pivotably mounted. In this case the holding arm (13) is mounted such that it can rotate about an axis (A) which lies substantially in the plane covered by the wafer (W), so that after a rotation through 180° about the axis (A), a wafer (W) held between the grippers (11, 12) has been turned.

Abstract: The invention concerns a system operating unit (30) having a column (3) that is attachable by way of at least two supports (9, 10) to different points of a system housing (14). In the preferred embodiment, this column is attached laterally to the housing, the supports serving for attachment to the housing of the system. In addition, a retaining bracket (4) is connected to the column (3) in such a way that a horizontal deflection of the retaining bracket (4) about a vertical axis is possible.

Abstract: A method and apparatus for determination of layer thicknesses and optical parameters of a number of layers of a specimen, in which the reflectance spectrum of the specimen is measured and then smoothed, and a modeled reflectance spectrum is adapted to the measured one by means of an optimization criterion so as thereby to determine the layer thickness. The optimization criterion is determined by the totality of the absolute values of the wavelength differences of all pairs of wavelengths, a pair of wavelengths being constituted by those wavelengths that respectively correspond to a selected extreme in the measured reflectance spectrum characterized by an index counting the extremes in ascending or descending order, and a selected extreme in the modeled reflectance spectrum having the same index.

Abstract: In the manufacture of integrated circuits on a wafer, it is necessary to monitor the manufacturing process by inspecting the ICs as to whether errors or defects have occurred during production. It is already known to use a scattered-light device (32) to determine whether a defect is present on the wafer. According to the present invention, defect examination is now improved in that defect-suspected regions (33) are identified using the scattered-light device (32). With a further examination system (30, 28) different from the scattered-light device (32), a determination is then made as to whether the defect-suspected regions (33) are defects. The latter can then also be classified.

Abstract: The invention concerns a method for automatic focusing onto the surface of a sample P, in which sample P is illuminated by a measurement light beam 13 that strikes the sample surface at an incidence angle differing from 0°; light reflected therefrom is detected by means of a position-sensitive receiving surface (23); intensity values as allocated to positions on the receiving surface (23) are recorded and evaluated, and the opening of a field stop (7) is imaged onto the receiving surface (23), thereby generating an image that is smaller than the receiving surface (23).

Abstract: The invention concerns a method for the determination of layer thickness ranges of layers of a specimen, in which the reflection spectrum of the specimen is measured in a specified wavelength range and then smoothed, the number of extremes in the smoothed reflection spectrum is determined, and the determination of the layer thickness ranges is accomplished by comparison with the number of extremes in the modeled reflection spectra, such that for each layer the thickness in that layer is varied in steps having a predetermined increment, and a reflection spectrum is modeled. In a method of this kind, the wavelength range and the increments are specified in self-consistent fashion using a sensitivity criterion.

Abstract: An arrangement for illuminating a specimen field in an optical instrument for specimen viewing includes: an illumination device, arranged in a housing, including a light source and an illuminating optical system, where a position of the light source or illuminating optical system is adjustable within the illumination device; a setting device including at least one drive system and configured to positionally adjust the light source or illuminating optical system; at least one linkage member connected to the light source or illuminating optical system, where the linkage member includes a coupling member accessible by the setting device from outside the housing; at least one measurement device configured to sense parameters of the light generated by the illumination device; and a control device that is configured to generate positioning commands for positional adjustment of the light source or illuminating optical system by the drive system as a function of the sensed parameters.