Abstract: Techniques for bonding a luminescent material to a thermally conductive substrate using a low temperature glass to provide a wavelength converter system are provided. A dichroic coating is deposited on a thermally conductive substrate. The dichroic coating includes alternating layers of a first material having a first refractive index and a second material having a second refractive index which is greater than the first refractive index. A buffer layer is deposited on the dichroic coating. A wavelength converter is bonded to the buffer layer by a layer of low temperature glass. In some embodiments, the wavelength converter includes a phosphor for converting a primary light from an excitation source into a secondary light.

Abstract: A tube for a semiconductor tubular lamp is disclosed, which tube has at least one holding projection for holding at least one printed circuit board on the inside of the tube, wherein the tube is a glass tube, and the at least one holding projection is an inwardly bulging, reshaped burling region of the tube. A semiconductor tubular lamp has a tube and at least one printed circuit board fitted with a semiconductor light source, which is accommodated in the tube and is held transversely to a longitudinal direction of the tube by means of at least one burling region in a form-fitted manner. The invention is in particular applicable to LED retrofit lamps for fluorescent lamps, in particular for replacing conventional tube lamps or flashlights of type T5 or T8.

Abstract: A tube for a semiconductor tubular lamp is disclosed, which tube has at least one holding projection for holding at least one printed circuit board on the inside of the tube, wherein the tube is a glass tube, and the at least one holding projection is an inwardly bulging, reshaped burling region of the tube. A semiconductor tubular lamp has a tube and at least one printed circuit board fitted with a semiconductor light source, which is accommodated in the tube and is held transversely to a longitudinal direction of the tube by means of at least one burling region in a form-fitted manner. The invention is in particular applicable to LED retrofit lamps for fluorescent lamps, in particular for replacing conventional tube lamps or flashlights of type T5 or T8.

Abstract: The invention relates to a tube (42) for a semiconductor tubular lamp (41), which tube has at least one holding projection for holding at least one printed circuit board (5) on the inside of the tube, wherein the tube (42) is a glass tube, and the at least one holding projection is an inwardly bulging, reshaped burling region (43-46) of the tube (42). A semiconductor tubular lamp (41) has a tube (42) and at least one printed circuit board (5) fitted with a semiconductor light source (6), which is accommodated in the tube (42) and is held transversely to a longitudinal direction (L) of the tube (42) by means of at least one burling region (43-46) in a form-fitted manner. A method serves to produce a tube (42), wherein the tube (42) is provided, locally heated, and pressed inwardly at the at least one locally heated point for generating the at least one burling area (43-46).

Abstract: A method for the production of a conversion element (3) is disclosed, which comprises the following steps: A) provision of a first covering member (1) which has a first connecting surface (1a) and of a second covering member (2), B) insertion of at least one cavity (10) into the first covering member (1) on the first connecting surface (1a), C) filling of the at least one cavity (10) with a filling compound (30), which comprises a conversion material (31), D) applying of the second covering member (2) to the first connecting surface (1a) of the first covering member (1), E) cohesive connection of the first covering member (1) and of the second covering member (2).

Abstract: The invention relates to a tube (42) for a semiconductor tubular lamp (41), which tube has at least one holding projection for holding at least one printed circuit board (5) on the inside of the tube, wherein the tube (42) is a glass tube, and the at least one holding projection is an inwardly bulging, reshaped burling region (43-46) of the tube (42). A semiconductor tubular lamp (41) has a tube (42) and at least one printed circuit board (5) fitted with a semiconductor light source (6), which is accommodated in the tube (42) and is held transversely to a longitudinal direction (L) of the tube (42) by means of at least one burling region (43-46) in a form-fitted manner. A method serves to produce a tube (42), wherein the tube (42) is provided, locally heated, and pressed inwardly at the at least one locally heated point for generating the at least one burling area (43-46).

Abstract: A radiation-emitting component includes a semiconductor chip and a conversion element. The semiconductor chip includes an active layer suitable for generating electromagnetic radiation and a radiation exit face. The conversion element includes a matrix material and a luminescent material. The conversion element is arranged downstream of the radiation exit face of the semiconductor chip. The matrix material comprises at least 40 wt. % tellurium oxide and is free of boron trioxide and/or germanium oxide. A method for producing such a radiation-emitting component is furthermore stated.

Abstract: An optoelectronic semiconductor part comprising a light source, a housing and electrical connections, wherein the optoelectronic semiconductor part comprises a component which contains metal phosphate, and wherein the metal phosphate is substantially alkali-free and halogen-free.

Abstract: An optoelectronic semiconductor element having a light source, a housing and electrical terminals, wherein the optoelectronic semiconductor element comprises components, which are produced from glass, and wherein at least two components touch at boundary surfaces adjusted to one another and are welded to one another directly there.

Abstract: An optoelectronic semiconductor part comprising a light source, a housing and electrical connections, wherein the optoelectronic semiconductor part comprises a component which contains metal phosphate, and wherein the metal phosphate is substantially alkali-free and halogen-free.

Abstract: A radiation-emitting component includes a semiconductor chip and a conversion element. The semiconductor chip includes an active layer suitable for generating electromagnetic radiation and a radiation exit face. The conversion element includes a matrix material and a luminescent material. The conversion element is arranged downstream of the radiation exit face of the semiconductor chip. The matrix material comprises at least 40 wt. % tellurium oxide and is free of boron trioxide and/or germanium oxide. A method for producing such a radiation-emitting component is furthermore stated.

Abstract: A unit is provided which comprises a first substrate (1) and a second substrate (2). At least one optoelectronic component (4) containing at least one organic material is arranged on the first substrate (1). The first substrate (1) and the second substrate (2) are arranged relative to one another such that the optoelectronic component (4) is arranged between the first substrate (1) and the second substrate (2). In addition, a bonding material (3) is arranged between the first substrate (1) and the second substrate (2), which material encloses the optoelectronic component (4) and bonds the first and second substrates (1, 2) together mechanically. The bonding material (3) contains silver oxide in a proportion of more than 0 wt. % and less than 100 wt. %, preferably between 5 wt. % and 80 wt. % inclusive, ideally between 10 wt. % and 70 wt. % inclusive.

Abstract: Production of an organic optoelectronic component comprising the following steps: A) providing a first substrate (1) having an active region (12) and a first connection region (11) surrounding said active region (12), wherein an organic, functional layer sequence (3) is formed in said active region (12), B) providing a second substrate (2) having a cover region (22) and a second connection region (21) surrounding said cover region (22), C) applying a first connection layer (4) made from a first glass solder material directly to said second substrate (2) in said second connection region (21), D) vitrifying (91) said first glass solder material of said first connection layer (4), E) applying a second connection layer (5) to said vitrified first connection layer (4) or to said first connection region (11) of said first substrate (1) and F) connecting said first substrate (1) to said second substrate (2) such that said second connection layer (5) connects said first connection region (11) to said first connection