Abstract: A dielectric structure, and an associated method of fabrication, wherein two fully cured photoimageable dielectric (PID) layers of the structure are nonadhesively interfaced by a partially cured PID layer. The partially cured PID layer includes a power plane sandwiched between a first partially cured PID sheet and a second partially cured PID sheet. The partially cured PID layer be formed either in isolation, or by successively forming upon one of the fully cured PID layers: the first partially cured PID sheet, the power plane, and the second partially cured PID sheet. The first partially cured PID sheet and the second partially cured PID sheet is the result of partially curing, by radiative exposure, a first uncured PID sheet and a second uncured PID sheet, respectively. The fully cured PID layers each include an internal power plane, a plated via having a blind end conductively coupled to the internal power plane, and a plated via passing through the fully cured PID layer.