Abstract: This invention pertains to a method for processing readout integrated circuits, and to a readout integrated circuit (10) that is processed in accordance with the method. The method includes a first step of providing a plurality of individual readout circuits each having a substrate (12) and at least one layer (14) constructed to have active circuitry that overlies a first surface (12a) of the substrate. Each of the readout integrated circuits has an associated amount of non-flatness or bowing due at least in part to a first force exerted on the substrate by the at least one layer of circuitry. A next step sorts the plurality of readout integrated circuits into a plurality of groups (A, B, C), wherein members of a group have a similar amount of non-flatness.

Abstract: A mercury-cadmium-telluride (HgCdTe) photoresponsive layer (14) having the composition Hg.sub.1-x Cd.sub.x Te is formed on a substrate (12) such that x increases from the surface (14a) of the photoresponsive layer (14) toward the substrate (12). This causes the bandgap in the photoresponsive layer (14) to increase from the surface (14a) toward the substrate (12), thereby urging minority carriers which are photogenerated in the photoresponsive layer (14) to move toward and be trapped at the surface (14a). Laterally spaced first and second ohmic contacts (16,18) are electrically connected to the photoresponsive layer (14) at a predetermined distance (z.sub.c) below the surface (14a) such that the photogenerated minority carriers trapped at the surface (14a) are urged away from the contacts (16,18) by the increasing bandgap.

Abstract: Metallic contacts to compound semiconductor devices which employ a native oxide for passivation are provided. The metallic contacts of the invention comprise at least two metal layers: a first layer making non-rectifying contact with the semiconductor surface and providing a diffusion barrier and a second layer thereon comprising an easily oxidizable metal. A low resistivity metal layer may optionally be interposed between the two metal layers for improved conductivity.The metallic contact is formed prior to passivation. The diffusion barrier layer prevents diffusion of potentially deleterious materials into the semiconductor, while exposed portions of the oxidizable metal form an insulating oxide during anodic passivation in an electrolyte.