Patents by Inventor Joan M. Redwing
Joan M. Redwing has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170260651Abstract: Systems and methods for gallium nitride growth on silicon. A semiconductor device, comprising a silicon (001) substrate. A graphene layer on the silicon (001) substrate, wherein the graphene layer is synthesized without a metallic catalyst, and a gallium nitride-based layer over the graphene layer. Methods for growing a gallium nitride layer on silicon are also taught.Type: ApplicationFiled: November 23, 2015Publication date: September 14, 2017Inventors: Joshua A. ROBINSON, Joan M. REDWING, Laurence P. SADWICK, Jarod Christopher GAGNON
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Patent number: 7915152Abstract: A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., having a transverse dimension greater than 1 centimeter, a length greater than 1 millimeter, and a top surface defect density of less than 107 defects cm?2. The Group III-V nitride boule may be formed by growing a Group III-V nitride material on a corresponding native Group III-V nitride seed crystal by vapor phase epitaxy at a growth rate above 20 micrometers per hour. Nuclear transmutation doping may be applied to an (Al,Ga,In)N article comprises a boule, wafer, or epitaxial layer.Type: GrantFiled: February 2, 2010Date of Patent: March 29, 2011Assignee: Cree, Inc.Inventors: Robert P. Vaudo, Jeffrey S. Flynn, George R. Brandes, Joan M. Redwing, Michael A. Tischler
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Publication number: 20100289122Abstract: A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., having a transverse dimension greater than 1 centimeter, a length greater than 1 millimeter, and a top surface defect density of less than 107 defects cm?2. The Group III-V nitride boule may be formed by growing a Group III-V nitride material on a corresponding native Group III-V nitride seed crystal by vapor phase epitaxy at a growth rate above 20 micrometers per hour. Nuclear transmutation doping may be applied to an (Al,Ga,In)N article comprises a boule, wafer, or epitaxial layer.Type: ApplicationFiled: February 2, 2010Publication date: November 18, 2010Applicant: CREE, INC.Inventors: Robert P. Vaudo, Jeffrey S. Flynn, George R. Brandes, Joan M. Redwing, Michael A. Tischler
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Patent number: 7655197Abstract: A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., having a transverse dimension greater than 1 centimeter, a length greater than 1 millimeter, and a top surface defect density of less than 107 defects cm?2. The Group III-V nitride boule may be formed by growing a Group III-V nitride material on a corresponding native Group III-V nitride seed crystal by vapor phase epitaxy at a growth rate above 20 micrometers per hour.Type: GrantFiled: February 19, 2003Date of Patent: February 2, 2010Assignee: Cree, Inc.Inventors: Robert P. Vaudo, Jeffrey S. Flynn, George R. Brandes, Joan M. Redwing, Michael A. Tischler
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Patent number: 6797341Abstract: Thin films of conducting and superconducting materials are formed by a process which combines physical vapor deposition with chemical vapor deposition. Embodiments include forming boride films, such as magnesium diboride, in high purity with superconducting properties on substrates typically used in the semiconductor industry by physically generating magnesium vapor in a deposition chamber and introducing a boron containing precursor into the chamber which combines with the magnesium vapor to form a thin boride film on the substrate.Type: GrantFiled: March 25, 2003Date of Patent: September 28, 2004Assignee: Penn State Research FoundationInventors: Xianghui Zeng, Alexej Pogrebnyakov, Xiaoxing Xi, Joan M. Redwing, Zi-Kui Liu, Darrell G. Schlom
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Patent number: 6727531Abstract: A gallium nitride-based HEMT device, comprising a channel layer formed of an InGaN alloy. Such device may comprise an AlGaN/InGaN heterostructure, e.g., in a structure including a GaN layer, an InGaN layer over the GaN layer, and a (doped or undoped) AlGaN layer over the InGaN layer. Alternatively, the HEMT device of the invention may be fabricated as a device which does not comprise any aluminum-containing layer, e.g., a GaN/InGaN HEMT device or an InGaN/InGaN HEMT device.Type: GrantFiled: August 7, 2000Date of Patent: April 27, 2004Assignee: Advanced Technology Materials, Inc.Inventors: Joan M. Redwing, Edwin L. Piner
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Publication number: 20030219911Abstract: Thin films of conducting and superconducting materials are formed by a process which combines physical vapor deposition with chemical vapor deposition. Embodiments include forming boride films, such as magnesium diboride, in high purity with superconducting properties on substrates typically used in the semiconductor industry by physically generating magnesium vapor in a deposition chamber and introducing a boron containing precursor into the chamber which combines with the magnesium vapor to form a thin boride film on the substrate.Type: ApplicationFiled: March 25, 2003Publication date: November 27, 2003Inventors: Xianghui Zeng, Alexej Pogrebnyakov, Xiaoxing Xi, Joan M. Redwing, Zi-Kui Liu, D. G. Schlom
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Publication number: 20030157376Abstract: A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., having a transverse dimension greater than 1 centimeter, a length greater than 1 millimeter, and a top surface defect density of less than 107 defects cm−2. The Group III-V nitride boule may be formed by growing a Group III-V nitride material on a corresponding native Group III-V nitride seed crystal by vapor phase epitaxy at a growth rate above 20 micrometers per hour.Type: ApplicationFiled: February 19, 2003Publication date: August 21, 2003Inventors: Robert P. Vaudo, Jeffrey S. Flynn, George R. Brandes, Joan M. Redwing, Michael A. Tischler
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Patent number: 6596079Abstract: A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., having a transverse dimension greater than 1 centimeter, a length greater than 1 millimeter, and a top surface defect density of less than 107 defects cm−2. The Group III-V nitride boule may be formed by growing a Group III-V nitride material on a corresponding native Group III-V nitride seed crystal by vapor phase epitaxy at a growth rate above 20 micrometers per hour.Type: GrantFiled: March 13, 2000Date of Patent: July 22, 2003Assignee: Advanced Technology Materials, Inc.Inventors: Robert P. Vaudo, Jeffrey S. Flynn, George R. Brandes, Joan M. Redwing, Michael A. Tischler
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Patent number: 6533874Abstract: A method of forming a (gallium, aluminum, indium) nitride base layer on a substrate for subsequent fabrication, e.g., by MOCVD or MBE, of a microelectronic device structure thereon. Vapor-phase (Ga, Al, In) chloride is reacted with a vapor-phase nitrogenous compound in the presence of the substrate, to form (Ga, Al, In) nitride. The (Ga, Al, In) nitride base layer is grown on the substrate by HVPE, to yield a microelectronic device base comprising a substrate with the (Ga, Al, In) nitride base layer thereon. The product of such HVPE process comprises a device quality, single crystal crack-free base layer of (Ga, Al, In) N on the substrate, in which the thickness of the base layer may, for example, be on the order of 2 microns and greater and the defect density of the base layer may, for example, be on the order of 1E8 cm−2 or lower. Microelectronic devices thereby may be formed on the base layer, over a substrate of a foreign (poor lattice match) material, such as sapphire.Type: GrantFiled: September 7, 2000Date of Patent: March 18, 2003Assignee: Advanced Technology Materials, Inc.Inventors: Robert P. Vaudo, Joan M. Redwing, Michael A. Tischler, Duncan W. Brown, Jeffrey S. Flynn
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Patent number: 6156581Abstract: A method of forming a (gallium, aluminum, indium) nitride base layer on a substrate for subsequent fabrication, e.g., by MOCVD or MBE, of a microelectronic device structure thereon. Vapor-phase (Ga, Al, In) chloride is reacted with a vapor-phase nitrogenous compound in the presence of the substrate, to form (Ga, Al, In) nitride. The (Ga, Al, In) nitride base layer is grown on the substrate by HVPE, to yield a microelectronic device base comprising a substrate with the (Ga, Al, In) nitride base layer thereon. The product of such HVPE process comprises a device quality, single crystal crack-free base layer of (Ga, Al, In) N on the substrate, in which the thickness of the base layer may, for example, be on the order of 2 microns and greater and the defect density of the base layer may, for example, be on the order of 1E8 cm.sup.-2 or lower. Microelectronic devices thereby may be formed on the base layer, over a substrate of a foreign (poor lattice match) material, such as sapphire.Type: GrantFiled: December 3, 1997Date of Patent: December 5, 2000Assignee: Advanced Technology Materials, Inc.Inventors: Robert P. Vaudo, Joan M. Redwing, Michael A. Tischler, Duncan W. Brown
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Patent number: 5169685Abstract: Fine-grained and/or equiaxed coatings, substantially free from columnar structure, are deposited on substrates by chemical vapor deposition by directing the flow of reactant gases to the substrate with high velocity and in close proximity thereto, most often at a velocity gradient of at least about 1050 and preferably at least about 2000 cm./cm.-sec. The deposition process is preferably conducted while moving the substrate so as to coat large areas thereof. By this method, tungsten and/or rhenium X-ray targets having excellent properties under conditions of rapid temperature cycling may be produced.Type: GrantFiled: November 1, 1990Date of Patent: December 8, 1992Assignee: General Electric CompanyInventors: David Woodruff, Joan M. Redwing, Rony A. Sanchez-Martinez
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Patent number: 4920012Abstract: Fine-grained and/or equiaxed tungsten and/or rhenium coatings, substantially free from columnar structure, are deposited on substrates (especially graphite) by chemical vapor deposition by directing the flow of reactant gases to the substrate with high velocity and in close proximity thereto, most often at a velocity gradient of at least about 1050 and preferably at least about 2000 cm./cm.-sec. The deposition process is preferably conducted while moving the substrate so as to coat large areas thereof. By this method, tungsten and/or rhenium-coated articles useful as X-ray targets having excellent properties under conditions of rapid temperature cycling may be produced.Type: GrantFiled: June 9, 1989Date of Patent: April 24, 1990Assignee: General Electric CompanyInventors: David W. Woodruff, Joan M. Redwing
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Patent number: RE44538Abstract: A gallium nitride-based HEMT device, comprising a channel layer formed of an InGaN alloy. Such device may comprise an AlGaN/InGaN heterostructure, e.g., in a structure including a GaN layer, an InGaN layer over the GaN layer, and a (doped or undoped) AlGaN layer over the InGaN layer. Alternatively, the HEMT device of the invention may be fabricated as a device which does not comprise any aluminum-containing layer, e.g., a GaN/InGaN HEMT device or an InGaN/InGaN HEMT device.Type: GrantFiled: August 24, 2005Date of Patent: October 15, 2013Assignee: Cree, Inc.Inventors: Joan M. Redwing, Edwin L. Piner