Abstract: Conducting and superconducting doped, magnesium boride materials are formed by a process which combines physical vapor deposition with chemical vapor deposition by physically generating magnesium vapor in a deposition chamber and introducing a boron containing precursor and a dopant into the chamber which combines with the magnesium vapor to form the material. Embodiments include forming carbon-doped magnesium diboride film and powder with hybrid physical-chemical vapor deposition (HPCVD) by adding a carbon-containing metalorganic magnesium precursor, bis(methylcyclopentadienyl)magnesium, with a hydrogen carrier gas together with a borane precursor in a chamber having a source of magnesium vapor.

Abstract: A green-blue to ultraviolet light emitting semiconductor laser having a top contact, a Bragg reflector, cladding layer, active layer, cladding layer, buffer, substrate, bottom contact and a passivation layer. The key aspect is a Ga*N material on a base structure comprising a SiC substrate selected from a group consisting of 2H-SiC, 4H-SiC and a-axis oriented 6H-SiC. Furthermore, the cladding layers have larger band gaps than the active layer and are complimentarily doped.