Patents by Inventor Joan Vila-Comamala

Joan Vila-Comamala has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11881408
    Abstract: Elements of photonic devices with high aspect ratio patterns are fabricated. A stabilizing catalyst that forms a stable metal-semiconductor alloy allows to etch a substrate in vertical direction even at very low oxidant concentration without external bias or magnetic field. A metal layer on the substrate reacts with the oxidant contained in air and catalyzes the semiconductor etching by the etchant. Air in continuous flow at the metal layer allows to maintain constant the oxidant concentration in proximity of the metal layer. The process can continue for a long time in order to form very high aspect ratio structures in the order of 10,000:1. Once the etched semiconductor structure is formed, the continuous air flow supports the reactant species diffusing through the etched semiconductor structure to maintain a uniform etching rate. The continuous air flow supports the diffusion of reaction by-products to avoid poisoning of the etching reaction.
    Type: Grant
    Filed: July 28, 2020
    Date of Patent: January 23, 2024
    Assignee: Paul Scherrer Institut
    Inventors: Lucia Romano, Konstantins Jefimovs, Matias Kagias, Joan Vila Comamala, Marco Stampanoni
  • Publication number: 20220293427
    Abstract: Elements of photonic devices with high aspect ratio patterns are fabricated. A stabilizing catalyst that forms a stable metal-semiconductor alloy allows to etch a substrate in vertical direction even at very low oxidant concentration without external bias or magnetic field. A metal layer on the substrate reacts with the oxidant contained in air and catalyzes the semiconductor etching by the etchant. Air in continuous flow at the metal layer allows to maintain constant the oxidant concentration in proximity of the metal layer. The process can continue for a long time in order to form very high aspect ratio structures in the order of 10,000:1. Once the etched semiconductor structure is formed, the continuous air flow supports the reactant species diffusing through the etched semiconductor structure to maintain a uniform etching rate. The continuous air flow supports the diffusion of reaction by-products to avoid poisoning of the etching reaction.
    Type: Application
    Filed: July 28, 2020
    Publication date: September 15, 2022
    Inventors: Lucia Romano, Konstantins Jefimovs, Matias Kagias, Joan Vila Comamala, Marco Stampanoni
  • Patent number: 9613729
    Abstract: An enhanced mechanical design of multiple zone plates precision alignment apparatus for hard x-ray focusing in a twenty-nanometer scale is provided. The precision alignment apparatus includes a zone plate alignment base frame; a plurality of zone plates; and a plurality of zone plate holders, each said zone plate holder for mounting and aligning a respective zone plate for hard x-ray focusing. At least one respective positioning stage drives and positions each respective zone plate holder. Each respective positioning stage is mounted on the zone plate alignment base frame. A respective linkage component connects each respective positioning stage and the respective zone plate holder. The zone plate alignment base frame, each zone plate holder and each linkage component is formed of a selected material for providing thermal expansion stability and positioning stability for the precision alignment apparatus.
    Type: Grant
    Filed: May 20, 2014
    Date of Patent: April 4, 2017
    Assignee: UChicago Argonne LLC
    Inventors: Deming Shu, Jie Liu, Sophie C. Gleber, Joan Vila-Comamala, Barry Lai, Jorg M. Maser, Christian Roehrig, Michael J. Wojcik, Franz Stefan Vogt
  • Publication number: 20150340114
    Abstract: An enhanced mechanical design of multiple zone plates precision alignment apparatus for hard x-ray focusing in a twenty-nanometer scale is provided. The precision alignment apparatus includes a zone plate alignment base frame; a plurality of zone plates; and a plurality of zone plate holders, each said zone plate holder for mounting and aligning a respective zone plate for hard x-ray focusing. At least one respective positioning stage drives and positions each respective zone plate holder. Each respective positioning stage is mounted on the zone plate alignment base frame. A respective linkage component connects each respective positioning stage and the respective zone plate holder. The zone plate alignment base frame, each zone plate holder and each linkage component is formed of a selected material for providing thermal expansion stability and positioning stability for the precision alignment apparatus.
    Type: Application
    Filed: May 20, 2014
    Publication date: November 26, 2015
    Applicant: UChicago Argonne, LLC
    Inventors: Deming Shu, Jie Liu, Sophie C. Gleber, Joan Vila-Comamala, Barry Lai, Jorg M. Maser, Christian Roehrig, Michael J. Wojcik, Franz Stefan Vogt