Abstract: A plasmonic transistor device includes an electro-optic substrate and a conductive layer placed on said electro-optic substrate to establish an interface therebetween. The first conductive layer and electro-optics substrate are made of materials that are suitable for transmission of a surface plasmon along the interface. The conductive layer is further formed with a source input grating and a drain output grating, for establishing the surface plasmon. A means for varying the electro-optic substrate permittivity, such as a light source or voltage source, is connected to the electro-optic substrate. Selective manipulation of the varying means allows the user to selectively increase or decrease the substrate permittivity. Control of the substrate permittivity further allows the user to control surface plasmon propagation from the source input grating along the interface to a drain output grating, to achieve a transistor-like effect for the surface plasmon.

Abstract: A Metal Nanoparticle Photonic Bandgap Device in SOI Method (NC#098884). The method includes providing a substrate having a semiconductor layer over an insulator layer, operatively coupling the substrate to a photonic bandgap structure having at least one period, wherein the photonic bandgap structure is adapted to receive and output light along a predetermined path, and operatively coupling the photonic bandgap structure and the substrate to a metal nanoparticle structure comprising at least three metal nanoparticles having spherical shapes of different radii, wherein the at least three metal nanoparticles are adapted to receive and amplify light rays and output amplified light.

Abstract: A technique for coupling electromagnetic energy into an aperture smaller than the wavelength of the electromagnetic energy desired to be coupled is disclosed.

Abstract: A Metal Nanoparticle Photonic Bandgap Device in SOI (NC#97882). The device includes a substrate having a semiconductor layer over an insulator layer; a photonic bandgap structure having at least one period operatively coupled to the substrate, adapted to receive and output amplified light along a predetermined path; a metal nanoparticle structure, operatively coupled to the photonic bandgap structure and the substrate, adapted to receive and amplify light rays and output amplified light.

Abstract: A Electronic/Photonic Bandgap Device (NC#98614). The apparatus includes a substrate; an electronics layer operatively coupled to the substrate; and an optical bus layer operatively coupled to the electronics layer. The optical bus layer comprises at least one 3D photonic bandgap structure having at least one period operatively coupled to the electronics layer and comprising a plurality of honeycomb-like structures having a plurality of high index regions and a plurality of low index regions, wherein the plurality of honeycomb-like structures comprises at least four honeycomb-like structures layered over each other, wherein a second honeycomb-like structure is offset from a first honeycomb-like structure, wherein a third honeycomb-like structure is offset from a second honeycomb-like structure, and wherein a fourth honeycomb-like structure is not offset from the first honeycomb-like structure. The 3D photonic bandgap structure and the electronics layer are monolithically integrated over the substrate.

Abstract: A 3D Photonic Bandgap Device in SOI (NC#98374). The structure includes a substrate having a semiconductor layer over an insulator layer and a 3D photonic bandgap structure having at least one period operatively coupled to the substrate. The apparatus has a funnel waveguide configuration.

Abstract: A 3D Photonic Bandgap Device in SOI Method (NC#97881). The method includes providing a substrate comprising a semiconductor layer over an insulator layer and fabricating a 3D photonic bandgap structure having at least one period over the substrate.

Abstract: A 3D Photonic Bandgap Device in SOI (NC#97719). The structure includes a substrate having a semiconductor layer over an insulator layer and a 3D photonic bandgap structure having at least one period operatively coupled to the substrate.

Abstract: A method and apparatus for micro-Golay cell infrared detector. The detector includes a microchannel plate array, sealing membrane, flexible membrane, IR absorbent medium and thermally reactive medium. The microchannel plate array has an upper surface and a lower surface and includes chamber walls and chambers. The sealing membrane is operatively coupled to the microchannel plate array and is capable of sealing the lower surface. The flexible membrane is operatively coupled to the upper surface and is capable of deforming. The IR absorbent medium is operatively coupled to the chambers and is capable of converting IR radiation into heat. The thermally reactive medium is contained within the chambers and is capable of changing volume in response to temperature changes.