Patents by Inventor Joanne Jinling Wang

Joanne Jinling Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuits with SRAM devices having read assist circuits and methods for operating such circuits
    Patent number: 10115453
    Abstract: Integrated circuits including semiconductor memory devices, read assist circuits for semiconductor memory devices, and methods for operating such circuits are provided. In an embodiment, a read assist circuit for use in a semiconductor memory device is provided. The read assist circuit includes a first drive device for driving a wordline of the semiconductor memory device to a wordline driving voltage. The first drive device operates at a first current. The read assist circuit also includes a second drive device for maintaining the wordline of the semiconductor memory device at the wordline driving voltage. The second drive device operates at a second current lower than the first current.
    Type: Grant
    Filed: December 19, 2016
    Date of Patent: October 30, 2018
    Assignee: Globalfoundries Singapore Pte. Ltd.
    Inventors: Zhihong Luo, Qi Chen, Joanne Jinling Wang, Yi Liang, Fei Xu, Benjamin Shui Chor Lau, Bai Yen Nguyen
  • INTEGRATED CIRCUITS WITH SRAM DEVICES HAVING READ ASSIST CIRCUITS AND METHODS FOR OPERATING SUCH CIRCUITS
    Publication number: 20180174646
    Abstract: Integrated circuits including semiconductor memory devices, read assist circuits for semiconductor memory devices, and methods for operating such circuits are provided. In an embodiment, a read assist circuit for use in a semiconductor memory device is provided. The read assist circuit includes a first drive device for driving a wordline of the semiconductor memory device to a wordline driving voltage. The first drive device operates at a first current. The read assist circuit also includes a second drive device for maintaining the wordline of the semiconductor memory device at the wordline driving voltage. The second drive device operates at a second current lower than the first current.
    Type: Application
    Filed: December 19, 2016
    Publication date: June 21, 2018
    Inventors: Zhihong Luo, Qi Chen, Joanne Jinling Wang, Yi Liang, Fei Xu, Benjamin Shui Chor Lau, Bai Yen Nguyen