Abstract: A device includes a first semiconductor layer; a portion of a second semiconductor layer disposed on the first semiconductor layer; and a third semiconductor layer including a first region disposed on the portion of the second semiconductor layer and a second region disposed on the first semiconductor layer. A thickness of the first region is less than a predefined thickness. The device also includes an etch stop layer disposed on the third semiconductor layer; a plurality of distinct portions of a fourth semiconductor layer disposed on the etch stop layer and exposing one or more distinct portions of the etch stop layer over the portion of the second semiconductor layer; and a plurality of distinct portions of a superconducting layer disposed on the plurality of distinct portions of the fourth semiconductor layer and the exposed one or more distinct portions of the etch stop layer.

Abstract: An optical phased array (OPA) photonic integrated chip includes a plurality of array elements, a plurality of phase shifters, a plurality of combiners, and an edge coupler configured to couple to a single mode waveguide. The plurality of phase shifters includes a layer of phase shifters that has a phase shifter connected to each array element in the plurality of array elements. The plurality of combiners is configured to connect the plurality of phase shifters to the edge coupler. The plurality of combiners includes a first combiner that has a first output that is connected to a second combiner or the edge coupler, and a second output of the first combiner is connected to a photodetector. An in-phase light portion at the first combiner is output through the first output, and an out-of-phase light portion at the first combiner is output through the second output.

Abstract: A photonic integrated circuit includes a photonic device. The photonic device includes an input region configured to receive an input signal including a plurality of multiplexed channels. The photonic device includes a metastructured dispersive region structured to partially demultiplex the input signal into an output signal and a throughput signal. The output signal includes a channel of the multiplexed channels. The throughput signal includes the remaining channels of the multiplexed channels. The photonic device includes an output region and a throughput region optically coupled with the metastructured dispersive region to receive the output signal and the throughput signal, respectively. The metastructured dispersive region includes a heterogeneous distribution of a first material and a second material that structures the metastructured dispersive region to partially demultiplex the input signal into the output signal and the throughput signal.

Abstract: A photonic integrated circuit includes a photonic device. The photonic device includes an input region configured to receive an input signal including a plurality of multiplexed channels. The photonic device includes a metastructured dispersive region structured to partially demultiplex the input signal into an output signal and a throughput signal. The output signal includes a channel of the multiplexed channels. The throughput signal includes the remaining channels of the multiplexed channels. The photonic device includes an output region and a throughput region optically coupled with the metastructured dispersive region to receive the output signal and the throughput signal, respectively. The metastructured dispersive region includes a heterogeneous distribution of a first material and a second material that structures the metastructured dispersive region to partially demultiplex the input signal into the output signal and the throughput signal.

Abstract: A device includes a first semiconductor layer; a portion of a second semiconductor layer disposed on the first semiconductor layer; and a third semiconductor layer including a first region disposed on the portion of the second semiconductor layer and a second region disposed on the first semiconductor layer. A thickness of the first region is less than a predefined thickness. The device also includes an etch stop layer disposed on the third semiconductor layer; a plurality of distinct portions of a fourth semiconductor layer disposed on the etch stop layer and exposing one or more distinct portions of the etch stop layer over the portion of the second semiconductor layer; and a plurality of distinct portions of a superconducting layer disposed on the plurality of distinct portions of the fourth semiconductor layer and the exposed one or more distinct portions of the etch stop layer.

Abstract: A device includes a first semiconductor layer; a portion of a second semiconductor layer disposed on the first semiconductor layer; and a third semiconductor layer including a first region disposed on the portion of the second semiconductor layer and a second region disposed on the first semiconductor layer. A thickness of the first region is less than a predefined thickness. The device also includes an etch stop layer disposed on the third semiconductor layer; a plurality of distinct portions of a fourth semiconductor layer disposed on the etch stop layer and exposing one or more distinct portions of the etch stop layer over the portion of the second semiconductor layer; and a plurality of distinct portions of a superconducting layer disposed on the plurality of distinct portions of the fourth semiconductor layer and the exposed one or more distinct portions of the etch stop layer.

Abstract: Examples of the present disclosure include a tunable laser comprising a waveguide including gain section. The waveguide overlies and is optically coupled to another waveguide. The another waveguide has a reflector at one end. A laser cavity is formed in the waveguides.

Abstract: In the examples provided herein, a system includes an input waveguide, where a first end of the input waveguide is coupled to a light-emitting optical transmitter to allow the emitted light to enter the input waveguide, and a first ring resonator tunable to be resonant at a first resonant wavelength, wherein the first ring resonator is positioned near the input waveguide to couple a light at the first resonant wavelength from the input waveguide to the first ring resonator. The system also has a bus waveguide positioned to couple the light at the first resonant wavelength in the first ring resonator to the bus waveguide, and a mechanism to wavelength-tune the first ring resonator to a particular wavelength.

Abstract: In the examples provided herein, a system has a plurality of arrayed waveguide gratings (AWG) having a plurality of input ports and a plurality of output ports. A signal within a given wavelength channel transmitted to one of the input ports of a given AWG is routed to one of the output ports of the given AWG based on a signal wavelength. The system also has a plurality of nodes, with each node comprising a set of components for each AWG that the node is coupled to. Each set of components comprises a plurality of optical transmitters, where each optical transmitter is tunable over multiple wavelength channels within a different wavelength band; a band multiplexer to multiplex the multiple wavelength channels within each different wavelength band; and a first output fiber to couple an output of the band multiplexer to one of the input ports of a first AWG.

Abstract: According to one example, the present application discloses an optical circuit comprising a grating to receive input light of mixed polarizations and output light of a same polarization to a first waveguide and a second waveguide. The first waveguide and second waveguide are optically coupled to a plurality of resonators that are coupled to a plurality of gratings that are to output light of mixed polarizations.

Abstract: A device includes a first semiconductor layer; a portion of a second semiconductor layer disposed on the first semiconductor layer; and a third semiconductor layer including a first region disposed on the portion of the second semiconductor layer and a second region disposed on the first semiconductor layer. A thickness of the first region is less than a predefined thickness. The device also includes an etch stop layer disposed on the third semiconductor layer; a plurality of distinct portions of a fourth semiconductor layer disposed on the etch stop layer and exposing one or more distinct portions of the etch stop layer over the portion of the second semiconductor layer; and a plurality of distinct portions of a superconducting layer disposed on the plurality of distinct portions of the fourth semiconductor layer and the exposed one or more distinct portions of the etch stop layer.

Abstract: Examples of the present disclosure include a tunable laser comprising a waveguide including gain section. The waveguide overlies and is optically coupled to another waveguide. The another waveguide has a reflector at one end. A laser cavity is formed in the waveguides.

Abstract: In the examples provided herein, a system includes a loop waveguide; and a grating coupler formed on the loop waveguide to couple light impinging on the grating coupler having a first polarization into the loop waveguide in a first direction, and to couple light having a second polarization, orthogonal to the first polarization, into the loop waveguide in a second direction. The system also includes a ring resonator positioned near the loop waveguide tuned to have a resonant wavelength at a first wavelength to couple light at the first wavelength out of the loop waveguide into the ring resonator. An output waveguide positioned near the ring resonator couples light out of the ring resonator into the output waveguide; and a photodetector detects light propagating out of a first end and a second end of the output waveguide.

Abstract: A device includes a first semiconductor layer; a portion of a second semiconductor layer disposed on the first semiconductor layer; and a third semiconductor layer including a first region disposed on the portion of the second semiconductor layer and a second region disposed on the first semiconductor layer. A thickness of the first region is less than a predefined thickness. The device also includes an etch stop layer disposed on the third semiconductor layer; a plurality of distinct portions of a fourth semiconductor layer disposed on the etch stop layer and exposing one or more distinct portions of the etch stop layer over the portion of the second semiconductor layer; and a plurality of distinct portions of a superconducting layer disposed on the plurality of distinct portions of the fourth semiconductor layer and the exposed one or more distinct portions of the etch stop layer.

Abstract: In the examples provided herein, a system has a plurality of arrayed waveguide gratings (AWG) having a plurality of input ports and a plurality of output ports. A signal within a given wavelength channel transmitted to one of the input ports of a given AWG is routed to one of the output ports of the given AWG based on a signal wavelength. The system also has a plurality of nodes, with each node comprising a set of components for each AWG that the node is coupled to. Each set of components comprises a plurality of optical transmitters, where each optical transmitter is tunable over multiple wavelength channels within a different wavelength band; a band multiplexer to multiplex the multiple wavelength channels within each different wavelength band; and a first output fiber to couple an output of the band multiplexer to one of the input ports of a first AWG.

Abstract: Examples of the present disclosure include a tunable laser comprising an optical coupler to couple light between a first laser cavity and a second laser cavity. The first laser cavity may extending between the optical coupler and a first reflector and include a first gain section. The second laser cavity may extend between the optical coupler and a second reflector and including a second gain section. At least one of the first laser cavity and the second laser cavity is tunable.

Abstract: In the examples provided herein, a system has a plurality of arrayed waveguide gratings (AWG) having a plurality of input ports and a plurality of output ports. A signal within a given wavelength channel transmitted to one of the input ports of a given AWG is routed to one of the output ports of the given AWG based on a signal wavelength. The system also has a plurality of nodes, with each node comprising a set of components for each AWG that the node is coupled to. Each set of components comprises a plurality of optical transmitters, where each optical transmitter is tunable over multiple wavelength channels within a different wavelength band; a band multiplexer to multiplex the multiple wavelength channels within each different wavelength band; and a first output fiber to couple an output of the band multiplexer to one of the input ports of a first AWG.

Abstract: In the examples provided herein, a polarization diversity receiver system includes a loop waveguide, and a two-dimensional grating coupler formed on the loop waveguide to couple light impinging on the grating coupler having a first polarization into the loop waveguide in a first direction, and to couple light having a second polarization orthogonal to the first polarization into the loop waveguide in a second direction. The system also includes a first output waveguide positioned near the loop waveguide in a first coupling region, a first distributed perturbation having a first resonant wavelength in the first coupling region to cause coupling of light at the first resonant wavelength between the loop waveguide and the first output waveguide, and a first photodetector to detect light propagating out of a first end and a second end of the first output waveguide.

Abstract: Examples of the present disclosure include a tunable laser comprising a waveguide including gain section. The waveguide overlies and is optically coupled to another waveguide. The another waveguide has a reflector at one end. A laser cavity is formed in the waveguides.

Abstract: According to one example, the present application discloses an optical circuit comprising a grating to receive input light of mixed polarizations and output light of a same polarization to a first waveguide and a second waveguide. The first waveguide and second waveguide are optically coupled to a plurality of resonators that are coupled to a plurality of gratings that are to output light of mixed polarizations.