Abstract: A method for manufacturing a device including a diamond crystal, the method including making available a substrate, growing a crystalline diamond layer on the substrate, the layer having a crystal lattice, the layer including at least a first set of XV centers in the crystal lattice, each XV center having a quantification axis, a main direction being defined for the first set, the quantification axes of the XV centers of the first set being parallel to the main direction, the normal direction being distinct from the main direction of the first set, removing a first part of the diamond layer in order to reveal a first face perpendicular to the main direction of the first set, and removing of a second part of the diamond layer in order to reveal a second face perpendicular to the first face.

Abstract: The invention relates to a treatment method of a diamond surface and to a corresponding diamond surface (5A). According to the method, ions are produced, each having at least three positive charges, and a beam of these ions is sent towards a diamond surface in order to make at least one zone of the surface conductive under the effect of said ions. Advantageously, conductive islands (6) are formed with a diameter smaller than 150 nm, then used preferably as one electron tank (diameter smaller than 10 nm) or as replenishment reservoirs for cold cathodes. Application to micro-electronics and to the production of cold cathodes.

Abstract: The invention relates to a treatment method of a diamond surface and to a corresponding diamond surface (5A).