Abstract: A semiconductor chip may include a substrate and a semiconductor body positioned thereon. The semiconductor body has a first semiconductor layer and a second semiconductor layer with an active zone sandwiched therebetween. At least one current spreading layer is designed to electrically contact the first semiconductor layer positioned between the substrate and the semiconductor body. A metal layer is designed to electrically contact the second semiconductor layer positioned between the substrate and the current spreading layer where the metal layer fully covers the current spreading layer. An insulating layer may be positioned between the current spreading layer and the metal layer in the vertical direction to where the metal layer is electrically insulated from the current spreading layer.

Abstract: A semiconductor chip may include a substrate and a semiconductor body positioned thereon. The semiconductor body has a first semiconductor layer and a second semiconductor layer with an active zone sandwiched therebetween. At least one current spreading layer is designed to electrically contact the first semiconductor layer positioned between the substrate and the semiconductor body. A metal layer is designed to electrically contact the second semiconductor layer positioned between the substrate and the current spreading layer where the metal layer fully covers the current spreading layer. An insulating layer may be positioned between the current spreading layer and the metal layer in the vertical direction to where the metal layer is electrically insulated from the current spreading layer.

Abstract: The invention relates to direct-structurable coating compositions comprising a metal oxide precursor, a photoacid generator, and a solvent. The present invention also relates to the use of such a coating composition to produce directly structured metal oxide layers, a method for producing metal oxide layers using such a coating composition, a metal oxide-containing layer produced according to such a method, and the use of such a metal oxide-containing layer to produce electronic components, in particular to produce transistors, diodes, sensors or solar cells.