Abstract: The present invention relates to aqueous suspensions containing 30 to 95 wt.-% metal carbide particles and a dispersant, and to a process for coating substrates using said aqueous suspensions. The invention also relates to the coated substrates that can be produced by the process according to the invention and to the uses thereof.

Abstract: The present invention relates to a process for producing coated substrates. In the process, first at least one region of a surface of a porous substrate is provided with at least one surface sealing layer. At least one aqueous suspension is then applied onto the at least one surface sealing layer, the at least one aqueous suspension containing at least one refractory metal carbide and water. The substrate is then subjected to a sintering process. The present invention also relates to a coated substrate, which can be produced or is produced by the method according to the invention, and to the use of such a coated substrate.

Abstract: The invention relates to a method for producing coated substrates. In the method, an aqueous suspension is first produced which contains water, at least one agglomerate former, and particles of at least one refractory metal carbide, said particles of the at least one refractory metal carbide forming agglomerates in the aqueous suspension. The at least one aqueous suspension is then applied onto a porous substrate, and the substrate then undergoes a sintering process. According to the invention, the diameter of each agglomerate is greater than the pore entrance diameter of each pore of the porous substrate. The invention additionally relates to a coated substrate which is produced or can be produced using the method according to the invention and to the use of such a coated substrate.

Abstract: Single crystal silicon with <100> orientation is doped with n-type dopant and comprises a starting cone, a cylindrical portion and an end cone, a crystal angle being not less than 20° and not greater than 30° in a middle portion of the starting cone, the length of which is not less than 50% of a length of the starting cone, and edge facets extending from a periphery of the single crystal into the single crystal, the edge facets in the starting cone and in the cylindrical portion of the single crystal in each case having a length which is not more than 700 ?m.

Abstract: The present invention relates to a method and to a crucible for producing particle-free and nitrogen-free silicon ingots by means of targeted solidification, in which method a crucible is provided, the inner surface of the crucible having a coating containing SixNy over its full surface or at least in regions, which coating is coated with a protective layer containing SiOx in order to reduce or prevent the introduction of nitrogen and SixNy particles into the silicon. The invention also relates to a silicon ingot, which is virtually free from nitrogen or SixNy particles.

Abstract: The present invention relates to aqueous suspensions containing 30 to 95 wt.-% metal carbide particles and a dispersant, and to a process for coating substrates using said aqueous suspensions. The invention also relates to the coated substrates that can be produced by the process according to the invention and to the uses thereof.

Abstract: Single crystal silicon with <100> orientation is doped with n-type dopant and comprises a starting cone, a cylindrical portion and an end cone, a crystal angle being not less than 20° and not greater than 30° in a middle portion of the starting cone, the length of which is not less than 50% of a length of the starting cone, and edge facets extending from a periphery of the single crystal into the single crystal, the edge facets in the starting cone and in the cylindrical portion of the single crystal in each case having a length which is not more than 700 ?m.

Abstract: Device for producing silicon blocks for photovoltaic applications, comprising a container for receiving a silicon melt with a base wall and at least one side wall, means for reducing the diffusion of impurities from at least one of the walls of the container into the silicon melt, wherein the means for reducing the diffusion of impurities comprise at least one covering element for the at least partial covering of at least one of the walls of the container.

Abstract: The invention relates to a method and a device for optimization of electric fields in measurement cells of Fourier transform ion cyclotron resonance mass spectrometers. The invention is based on the rationale that asymmetric electric fields with uniformly or non-uniformly perturbed field axes can appear in ion cyclotron resonance cells and therefore the axis of the magnetron orbit can become radially displaced. Shifted magnetron orbits negatively affect the cyclotron excitation, deteriorate the FT-ICR signal, increase the intensity of an even-numbered harmonics peak, lead to stronger side bands of the FT-ICR signal, and in extreme cases, cause loss of ions. The present invention helps in probing the shift of the magnetron motion, detecting parameters indicative of the offset of the electric field axis and/or correcting it by trimming it back to the geometric axis of the cell.

Abstract: The invention relates to a device and a method for producing crystalline bodies by directional solidification. The device comprises a melting furnace (11) having a heating chamber (12) in which at least one supporting surface (13) for a crucible (8) and at least one gas purging device arranged above the supporting surface (13) and having a gas outlet facing the supporting surface (13) are defined. An embodiment of the device is characterized in that the gas outlet is defined by one or more openings in a lower plunger surface of a plunger-shaped element (2) which has a geometry adapted to the inner shape of the crucible (8), said shape allowing an at least partial insertion of the plunger-shaped body (2) into the crucible (8). The gas purging device and/or the supporting surface (13) comprise an adjusting mechanism or are designed to be adjustable in such a manner that they allow an adjustment of a perpendicular distance between the supporting surface (13) and the plunger-shaped body (2).

Abstract: The invention relates to a method and a device for optimization of electric fields in measurement cells of Fourier transform ion cyclotron resonance mass spectrometers. The invention is based on the rationale that asymmetric electric fields with uniformly or non-uniformly perturbed field axes can appear in ion cyclotron resonance cells and therefore the axis of the magnetron orbit can become radially displaced. Shifted magnetron orbits negatively affect the cyclotron excitation, deteriorate the FT-ICR signal, increase the intensity of an even-numbered harmonics peak, lead to stronger side bands of the FT-ICR signal, and in extreme cases, cause loss of ions. The present invention helps in probing the shift of the magnetron motion, detecting parameters indicative of the offset of the electric field axis and/or correcting it by trimming it back to the geometric axis of the cell.

Abstract: The invention relates to a method and a device for optimization of electric fields in measurement cells of Fourier transform ion cyclotron resonance mass spectrometers. The invention is based on the rationale that asymmetric electric fields with uniformly or non-uniformly perturbed field axes can appear in ion cyclotron resonance cells and therefore the axis of the magnetron orbit can become radially displaced. Shifted magnetron orbits negatively affect the cyclotron excitation, deteriorate the FT-ICR signal, increase the intensity of an even-numbered harmonics peak, lead to stronger side bands of the FT-ICR signal, and in extreme cases, cause loss of ions. The present invention helps in probing the shift of the magnetron motion, detecting parameters indicative of the offset of the electric field axis and/or correcting it by trimming it back to the geometric axis of the cell.

Abstract: The present invention relates to a method for the production of crystal layers or bulk crystals of group III nitride or of mixtures of different group III nitrides by means of precipitation, at a first temperature T1 in a first temperature range, from a group-III containing fused metal on a group-III-nitride crystal seed placed in the fused metal or on a foreign substrate placed in the fused metal, with the admixture of nitrogen in the fused metal at a pressure P. With the method a solvent additive is added to the fused metal which increases the conversion rate of group III metal to group III nitride in the fused metal. The fused metal runs through at least one temperature cycle with a first and a second process phase in which cycle the fused metal cools after the first process phase from the first temperature to a second temperature T2 below the first temperature range and at the end of the second process phase is heated from the second temperature back to a temperature within the first temperature range.

Abstract: Device for producing silicon blocks for photovoltaic applications, comprising a container for receiving a silicon melt with a base wall and at least one side wall, means for reducing the diffusion of impurities from at least one of the walls of the container into the silicon melt, wherein the means for reducing the diffusion of impurities comprise at least one covering element for the at least partial covering of at least one of the walls of the container.

Abstract: Device for the production of silicon blocks, the device comprising a vessel for receiving a silicon melt with a bottom, an inside, an outside and a central longitudinal axis and at least one support plate which is at least partially in direct contact with the bottom, and which forms a base together with the bottom, and means for generating an inhomogeneous temperature field on the inside of the bottom.

Abstract: A device for the production of silicon blocks comprising a vessel for receiving a silicon melt with at least one vessel wall, with the at least one vessel wall comprising a nucleation-inhibiting coating on at least part of an inside or with the at least one vessel wall consisting of a nucleation-inhibiting material.

Abstract: The present invention relates to a method for increasing the conversion of group III metal to group III nitride in a fused metal containing group III elements, with the introduction of nitrogen into the fused metal containing group III, at temperatures?1100° C. and at pressures of below 1×108 Pa, wherein a solvent adjunct is added to the fused metal containing group III elements, which is at least one element of the following elements C, Si, Ge, Fe, and/or at least one element of the rare earths, or an alloy or a compound of these elements, in particular their nitrides.

Abstract: The invention relates to a device and a method for producing crystalline bodies by directional solidification. The device comprises a melting furnace (11) having a heating chamber (12) in which at least one supporting surface (13) for a crucible (8) and at least one gas purging device arranged above the supporting surface (13) and having a gas outlet facing the supporting surface (13) are defined. An embodiment of the device is characterized in that the gas outlet is defined by one or more openings in a lower plunger surface of a plunger-shaped element (2) which has a geometry adapted to the inner shape of the crucible (8), said shape allowing an at least partial insertion of the plunger-shaped body (2) into the crucible (8). The gas purging device and/or the supporting surface (13) comprise an adjusting mechanism or are designed to be adjustable in such a manner that they allow an adjustment of a perpendicular distance between the supporting surface (13) and the plunger-shaped body (2).

Abstract: The present invention relates to a method for increasing the conversion of group III metal to group III nitride in a fused metal containing group III elements, with the introduction of nitrogen into the fused metal containing group III, at temperatures?1100° C. and at pressures of below 1×108 Pa, wherein a solvent adjunct is added to the fused metal containing group III elements, which is at least one element of the following elements C, Si, Ge, Fe, and/or at least one element of the rare earths, or an alloy or a compound of these elements, in particular their nitrides.

Abstract: The present invention relates to a method for the production of crystal layers or bulk crystals of group III nitride or of mixtures of different group III nitrides by means of precipitation, at a first temperature T1 in a first temperature range, from a group-III containing fused metal on a group-III-nitride crystal seed placed in the fused metal or on a foreign substrate placed in the fused metal, with the admixture of nitrogen in the fused metal at a pressure P. With the method a solvent additive is added to the fused metal which increases the conversion rate of group III metal to group III nitride in the fused metal. The fused metal runs through at least one temperature cycle with a first and a second process phase in which cycle the fused metal cools after the first process phase from the first temperature to a second temperature T2 below the first temperature range and at the end of the second process phase is heated from the second temperature back to a temperature within the first temperature range.