Abstract: A projection exposure tool for microlithography for exposing a substrate is disclosed. The tool includes a projection objective. The tool also includes an optical measuring apparatus for determining a surface topography of the substrate before the substrate is exposed. The measuring apparatus has a measuring beam path which extends outside of the projection objective. The measuring apparatus is a wavefront measuring apparatus configured to determine topography measurement values simultaneously at a number of points on the substrate surface.

Abstract: A projection objective for microlithography includes at least one optical assembly with optical elements which are disposed between an object plane and an image plane. The optical assembly includes at least one optical terminal element, which is disposed close to the image plane. A first immersion liquid is disposed on the image oriented surface of the optical terminal element. A second immersion liquid is disposed on the object oriented surface of the optical terminal element. The object oriented surface includes a first surface section for the imaging light to enter into the terminal element, and the image oriented surface includes a second surface portion for the imaging light to exit from the terminal element.

Abstract: A mirror (M) of a projection exposure apparatus for microlithography configured for structured exposure of a light-sensitive material and a method for producing a mirror (M). The mirror (M) has a substrate body (B), a first mirror surface (S) and a second mirror surface (S?). The first mirror surface (S) is formed on a first side (VS) of the substrate body (B). The second mirror surface (S?) is formed on a second side (RS) of the substrate body (B), the second side being different from the first side of the substrate body (B). The mirror (M) may be embodied, in particular, such that the substrate body (B) is produced from a glass ceramic material.

Abstract: A method for calibrating an apparatus for the position measurement of measurement structures on a lithography mask comprises the following steps: qualifying a calibration mask comprising diffractive structures arranged thereon by determining positions of the diffractive structures with respect to one another by means of interferometric measurement, determining positions of measurement structures arranged on the calibration mask with respect to one another by means of the apparatus, and calibrating the apparatus by means of the positions determined for the measurement structures and also the positions determined for the diffractive structures.

Abstract: The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

Abstract: The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

Abstract: Optical element having an optical surface, which optical surface is adapted to a non-spherical target shape, such that a long wave variation of the actual shape of the optical surface with respect to the target shape is limited to a maximum value of 0.2 nm, wherein the long wave variation includes only oscillations having a spatial wavelength equal to or larger than a minimum spatial wavelength of 10 mm.

Abstract: A method of manufacturing an optical element (5) comprises testing an optical surface (3) of the optical element, using an interferometer 1a directing measuring light (23a) onto the optical surface wherein the measuring light traverses two successive holograms (44, 48) disposed in the beam path of the measuring light upstream of the optical surface.

Abstract: A projection objective for microlithography includes at least one optical assembly with optical elements which are disposed between an object plane and an image plane. The optical assembly includes at least one optical terminal element, which is disposed close to the image plane. A first immersion liquid is disposed on the image oriented surface of the optical terminal element. A second immersion liquid is disposed on the object oriented surface of the optical terminal element. The object oriented surface includes a first surface section for the imaging light to enter into the terminal element, and the image oriented surface includes a second surface portion for the imaging light to exit from the terminal element.

Abstract: Optical element having an optical surface, which optical surface is adapted to a non-spherical target shape, such that a long wave variation of the actual shape of the optical surface with respect to the target shape is limited to a maximum value of 0.2 nm, wherein the long wave variation includes only oscillations having a spatial wavelength equal to or larger than a minimum spatial wavelength of 10 mm.

Abstract: The disclosure relates to a projection exposure system for microlithography, which includes at least one optical system that has at least one optical element with at least two aspherical surfaces essentially arranged rigidly relative to each other.

Abstract: A method of positioning optical elements relative to each other uses an interferometer apparatus comprising a plurality of holograms generating beams of adjustment measuring light which are incident on optical surfaces of the optical elements. Interference patterns generated by superimposing adjustment measuring light of the beams reflected from the surfaces are indicative of positioning errors of the optical elements. The beams of adjustment measuring light may comprise focused beams forming a point focus on the optical surface and beams of light which is orthogonally incident on extended portions on the optical surface.

Abstract: The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

Abstract: A method of manufacturing an optical element (5) comprises testing an optical surface (3) of the optical element, using an interferometer 1a directing measuring light (23a) onto the optical surface wherein the measuring light traverses two successive holograms (44, 48) disposed in the beam path of the measuring light upstream of the optical surface.

Abstract: A method of qualifying a diffraction grating comprises performing plural measurements by illuminating a region of the grating with a beam of measuring light and detecting an intensity of measuring light diffracted by the grating into a 0th diffraction order. A wavelength of the measuring light or a polarization of the measuring light or an angle of incidence of the measuring light onto the diffraction grating is varied between subsequent measurements. A shape parameter of diffracting elements forming the grating comprises a pitch, height or width of structural features of the diffracting elements. The shape parameter is advantageously used in analyzing interferometric measurements performed on optical surfaces during manufacture of optical elements of a high accuracy.

Abstract: A method of manufacturing an optical element having an optical surface of a target shape includes performing an interferometric test using an interferometer optics, wherein the interferometer optics includes a hologram that deflects a beam of measuring light by a substantial angle or that displaces an axis of symmetry of measuring light emerging from the hologram with respect to an axis of symmetry of measuring light incident on the hologram.

Abstract: A mask (20) for use in a microlithographic projection exposure apparatus (10) has a support (28) on which a pattern of opaque structures (32) is applied. The intermediate spaces (36, 36?) remaining between the structures (32c) are filled with a liquid or solid dielectric material (38, 38?). This increases the polarisation dependency of the diffraction efficiency, so that the mask can be used as a polarizer.