Patents by Inventor Jochen Hintermayer

Jochen Hintermayer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120304699
    Abstract: The present invention relates to a novel process for coarse decarburization of a silicon melt, and to the use thereof for production of silicon, preferably solar silicon or semiconductor silicon.
    Type: Application
    Filed: December 27, 2010
    Publication date: December 6, 2012
    Inventor: Jochen Hintermayer
  • Publication number: 20120302043
    Abstract: The present invention relates to a novel process for decarburizing a silicon melt, and to the use thereof for production of silicon, preferably solar silicon or semiconductor silicon.
    Type: Application
    Filed: December 27, 2010
    Publication date: November 29, 2012
    Inventor: Jochen Hintermayer
  • Patent number: 5998319
    Abstract: By providing a new method of producing sintered silicon nitride, this invention takes into account the fact that parts made of Si.sub.3 N.sub.4 are often used in temperature ranges below 1200.degree. C. and sometimes even below 500.degree. C. and therefore needn't be designed to withstand temperatures above 1200.degree. C. The sintered silicon nitride for these low-temperature applications is obtained by sintering silicon nitride powder of <2 .mu.m with 5 to 20 wt. % of one or more glass components of the same particle size at temperatures below 1400.degree. C. It is a prerequisite that the glass components used, preferably alkali metal borate glasses with a coefficient of thermal expansion .alpha. which matches that of Si.sub.3 N.sub.4, have a transformation point T.sub.g which is below 750.degree. C., and that the individual glass components have a free enthalpy .DELTA.G which is at least 60% of the free enthalpy of SiO.sub.2. For low-temperature applications, Si.sub.3 N.sub.
    Type: Grant
    Filed: June 10, 1998
    Date of Patent: December 7, 1999
    Assignee: SKW Trostberg Aktiengesellschaft
    Inventor: Jochen Hintermayer
  • Patent number: 5114693
    Abstract: The present invention provides a process for the production of silicon nitride by the reaction of silicon and nitrogen, wherein, in one reaction step, silicon powder is reacted with nitrogen which continuously rotates at a temperature of from 1000.degree. to 1800.degree. C. and at a pressure of from 1.01 to 1.8 bar up to a nitrogen content of 1 to 39.5% by weight.The present invention also provides a silicon nitride produced by this process wherein it is obtained in porous form and has the following properties.a) grain size of 0.1 to 20 mm.b) nitrogen content of 1 to 39.5% by weight,c) oxygen content of 1%,d) ratio of .alpha.:.beta.-phase of 1:9 to 9:1.
    Type: Grant
    Filed: May 9, 1991
    Date of Patent: May 19, 1992
    Assignee: SKW Trostberg Aktiengesellschaft
    Inventors: Jochen Hintermayer, Ernst Graf, Werner Gmohling, Georg Schroll, Wolfgang Kobler