Abstract: An analysis unit is configured to carry out a polymerase chain reaction. The analysis unit includes a lid element with at least one lid recess and a base element with at least one base recess. The base recess is arranged opposite the lid recess to form a reaction chamber. The analysis unit further includes a film arranged, at least in the region of the lid recess, between the lid element and the base element. The analysis unit also includes at least one channel formed between the lid element and the base element and configured to channel a fluid into and/or out of the base recess of the reaction chamber. The analysis unit includes a probe carrier arranged in the base recess and including at least one indicator material as the probe, for identifying a biochemical material. The indicator material on the probe carrier is in a solid aggregate state.

Abstract: A data management method includes accessing data objects in an application written in C/C++ for change-logging and multi-step redo/undo, wherein the data objects are organized in a binary format and are devoid of self-describing information, and wherein the accessing the data objects is structured in a plurality of layers, the plurality of layers including a semantic layer, a change log layer, and a repository layer, dynamically analyzing the data objects to recognize all changes made by any of a plurality of users for all data types used by the application, the dynamically analyzing the data including using semantic analysis to track changes and identifying any changes in any of the data objects, and using generated wrapper classes to convert between C/C++ data structures and generic data format, wherein the wrapper classes are generated from developer provided annotations with C/C++ data structure declarations.

Abstract: A data management method includes accessing data objects in an application written in C/C++ for change-logging and multi-step redo/undo, wherein the data objects are organized in a binary format and are devoid of self-describing information, and wherein the accessing the data objects is structured in a plurality of layers, the plurality of layers including a semantic layer, a change log layer, and a repository layer, dynamically analyzing the data objects to recognize all changes made by any of a plurality of users for all data types used by the application, the dynamically analyzing the data including using semantic analysis to track changes and identifying any changes in any of the data objects, and using generated wrapper classes to convert between C/C++ data structures and generic data format, wherein the wrapper classes are generated from developer provided annotations with C/C++ data structure declarations.

Abstract: A method for reducing defect leakage current in a semiconductor memory device comprising a plurality of memory banks, each memory bank comprising a plurality of memory arrays and sense amplifier columns comprising a plurality of sense amplifiers, wherein there is a sense amplifier column positioned between and shared by memory arrays on opposites thereof. At least one bank-specific isolation control signal is independently generated for each of the plurality of memory banks depending on existence and location of an anomalous bitline leakage in a memory bank. The at least one bank-specific isolation control signal is supplied to at least one sense amplifier column in the corresponding memory bank to isolate at least one side to at least one memory array that is in an unselected state in a corresponding memory bank.

Abstract: A method for reducing defect leakage current in a semiconductor memory device comprising a plurality of memory banks, each memory bank comprising a plurality of memory arrays and sense amplifier columns comprising a plurality of sense amplifiers, wherein there is a sense amplifier column positioned between and shared by memory arrays on opposites thereof. At least one bank-specific isolation control signal is independently generated for each of the plurality of memory banks depending on existence and location of an anomalous bitline leakage in a memory bank. The at least one bank-specific isolation control signal is supplied to at least one sense amplifier column in the corresponding memory bank to isolate at least one side to at least one memory array that is in an unselected state in a corresponding memory bank.