Patents by Inventor Jochen Rinderknecht

Jochen Rinderknecht has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for characterizing discontinuities in semiconductor devices
    Patent number: 8761489
    Abstract: An approach is provided for characterizing discontinuities in semiconductor devices, for example in a metal silicide. An image of an integrated circuit is caused, at least in part, to be received. The image is analyzed for at least one discontinuity in the integrated circuit structure. A relative measure of the at least one discontinuity is determined in comparison to the integrated circuit structure based on analyzing the image.
    Type: Grant
    Filed: September 1, 2011
    Date of Patent: June 24, 2014
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Jochen Rinderknecht, Inka Richter, Clemens Fitz
  • METHOD AND APPARATUS FOR CHARACTERIZING DISCONTINUITIES IN SEMICONDUCTOR DEVICES
    Publication number: 20130058559
    Abstract: An approach is provided for characterizing discontinuities in semiconductor devices, for example in a metal silicide. An image of an integrated circuit is caused, at least in part, to be received. The image is analyzed for at least one discontinuity in the integrated circuit structure. A relative measure of the at least one discontinuity is determined in comparison to the integrated circuit structure based on analyzing the image.
    Type: Application
    Filed: September 1, 2011
    Publication date: March 7, 2013
    Applicant: GLOBALFOUNDRIES Inc.
    Inventors: Jochen Rinderknecht, Inka Richter, Clemens Fitz
  • Method of determining an orientation of a crystal lattice of a first substrate relative to a crystal lattice of a second substrate
    Patent number: 7421060
    Abstract: According to an illustrative embodiment disclosed herein, a semiconductor structure comprising a first crystalline substrate and a second crystalline substrate is provided. The semiconductor structure is irradiated with a radiation. Both the first crystalline substrate and the second crystalline substrate are exposed to the radiation. At least one diffraction pattern of a crystal lattice of the first crystalline substrate and a crystal lattice of the second crystalline substrate is measured. A relative orientation of the crystal lattice of the first crystalline substrate and the crystal lattice of the second crystalline substrate is determined from the at least one diffraction pattern.
    Type: Grant
    Filed: May 4, 2007
    Date of Patent: September 2, 2008
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Inka Zienert, Jochen Rinderknecht, Thorsten Kammler
  • METHOD OF DETERMINING AN ORIENTATION OF A CRYSTAL LATTICE OF A FIRST SUBSTRATE RELATIVE TO A CRYSTAL LATTICE OF A SECOND SUBSTRATE
    Publication number: 20080056449
    Abstract: According to an illustrative embodiment disclosed herein, a semiconductor structure comprising a first crystalline substrate and a second crystalline substrate is provided. The semiconductor structure is irradiated with a radiation. Both the first crystalline substrate and the second crystalline substrate are exposed to the radiation. At least one diffraction pattern of a crystal lattice of the first crystalline substrate and a crystal lattice of the second crystalline substrate is measured. A relative orientation of the crystal lattice of the first crystalline substrate and the crystal lattice of the second crystalline substrate is determined from the at least one diffraction pattern.
    Type: Application
    Filed: May 4, 2007
    Publication date: March 6, 2008
    Inventors: Inka Zienert, Jochen Rinderknecht, Thorsten Kammler