Patents by Inventor Jochen Schacht
Jochen Schacht has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20110280964Abstract: A composition for treating hearing loss includes components that function through different biological mechanisms to provide an additive effect that is equal to or greater than a sum of the effect of the individual components. The composition includes a biologically effective amount of at least one scavenger of singlet oxygen, a donor antioxidant, a third antioxidant, and a vasodilator. A method of treating hearing loss includes the step of internally administering the composition including a biologically effective amount of the at least one scavenger of singlet oxygen, the donor antioxidant, the third antioxidant, and the vasodilator to a mammal within three days of trauma to a middle or inner ear of the mammal.Type: ApplicationFiled: April 21, 2011Publication date: November 17, 2011Applicant: THE REGENTS OF THE UNIVERSITY OF MICHIGANInventors: Josef Miller, Colleen LePrell, Jochen Schacht, Diane Prieskorn
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Patent number: 7951845Abstract: A composition for treating hearing loss includes components that function through different biological mechanisms to provide an additive effect that is equal to or greater than a sum of the effect of the individual components. The composition includes a biologically effective amount of at least one scavenger of singlet oxygen, a donor antioxidant, a third antioxidant, and a vasodilator. A method of treating hearing loss includes the step of internally administering the composition including a biologically effective amount of the at least one scavenger of singlet oxygen, the donor antioxidant, the third antioxidant, and the vasodilator to a mammal within three days of trauma to a middle or inner ear of the mammal.Type: GrantFiled: January 17, 2007Date of Patent: May 31, 2011Assignee: The Regents of the University of MichiganInventors: Josef Miller, Colleen LePrell, Jochen Schacht, Diane Prieskorn
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Patent number: 7494915Abstract: An interconnect structure in the back end of the line of an integrated circuit forms contacts between successive layers by removing material in the top surface of the lower interconnect in a cone-shaped aperture, the removal process extending through the liner of the upper aperture, and depositing a second liner extending down into the cone-shaped aperture, thereby increasing the mechanical strength of the contact, which then enhance the overall reliability of the integrated circuit.Type: GrantFiled: August 9, 2006Date of Patent: February 24, 2009Assignees: International Business Machines Corporation, Infineon Technologies, AGInventors: Lawrence A. Clevenger, Andrew P. Cowley, Timothy J. Dalton, Mark Hoinkis, Steffen K. Kaldor, Erdem Kaltalioglu, Kaushik A. Kumar, Douglas C. La Tulipe, Jr., Jochen Schacht, Andrew H. Simon, Terry A. Spooner, Yun-Yu Wang, Clement H. Wann, Chih-Chao Yang
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Patent number: 7348279Abstract: In order to form a contact in a layer on a substrate, in particular a contact in a logic circuit in a semiconductor component, the mask layer is structured for etching of the contact holes with a photoresist layer which is exposed using two masks, with the first mask containing a regular pattern of contact structures with a period which corresponds to the order of magnitude of twice the edge length of the contact hole, and with the second mask containing a pattern with a structure which surrounds at least the contact hole area, and thus covers it.Type: GrantFiled: November 15, 2005Date of Patent: March 25, 2008Assignee: Infineon Technologies AGInventors: Uwe Paul Schröder, Jochen Schacht
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Publication number: 20070165870Abstract: A composition for treating hearing loss includes components that function through different biological mechanisms to provide an additive effect that is equal to or greater than a sum of the effect of the individual components. The composition includes a biologically effective amount of at least one scavenger of singlet oxygen, a donor antioxidant, a third antioxidant, and a vasodilator. A method of treating hearing loss includes the step of internally administering the composition including a biologically effective amount of the at least one scavenger of singlet oxygen, the donor antioxidant, the third antioxidant, and the vasodilator to a mammal within three days of trauma to a middle or inner ear of the mammal.Type: ApplicationFiled: January 17, 2007Publication date: July 19, 2007Applicant: THE REGENTS OF THE UNIVERSITY OF MICHIGANInventors: Josef Miller, Colleen LePrell, Jochen Schacht, Diane Prieskorn
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Patent number: 7241681Abstract: A metal hardmask for use with a Dual Damascene process used in the manufacturing of semiconductor devices. The metal hardmask has advantageous translucent characteristics to facilitate alignment between levels while fabricating a semiconductor device and avoids the formation of metal oxide residue deposits. The metal hardmask comprises a first or primary layer of TiN (titanium nitride) and a second or capping layer of TaN (tantalum nitride).Type: GrantFiled: January 12, 2006Date of Patent: July 10, 2007Assignees: Infineon Technologies AG, International Business Machines CorporationInventors: Kaushik Kumar, Lawrence Clevenger, Timothy Dalton, Douglas C. La Tulipe, Andy Cowley, Erdem Kaltalioglu, Jochen Schacht, Andrew H. Simon, Mark Hoinkis, Steffen K. Kaldor, Chih-Chao Yang
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Publication number: 20060292852Abstract: An interconnect structure in the back end of the line of an integrated circuit forms contacts between successive layers by removing material in the top surface of the lower interconnect in a cone-shaped aperture, the removal process extending through the liner of the upper aperture, and depositing a second liner extending down into the cone-shaped aperture, thereby increasing the mechanical strength of the contact, which then enhance the overall reliability of the integrated circuit.Type: ApplicationFiled: August 9, 2006Publication date: December 28, 2006Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, INFINEON TECHNOLOGIES NORTH AMERICA CORP.Inventors: Lawrence Clevenger, Andrew Cowley, Timothy Dalton, Mark Hoinkis, Steffen Kaldor, Erdem Kaltalioglu, Kaushik Kumar, Douglas La Tulipe, Jochen Schacht, Andrew Simon, Terry Spooner, Yun-Yu Wang, Clement Wann, Chih-Chao Yang
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Patent number: 7125792Abstract: A dual damascene structure and method of fabrication thereof. An insulating layer comprises a first dielectric material and a second dielectric material, the second dielectric material being different from the first dielectric material. First conductive regions having a first pattern are formed in the first dielectric material, and second conductive regions having a second pattern are formed in the second dielectric material, the second pattern being different from the first pattern. One of the first dielectric material and the second dielectric material comprises an organic material, and the other dielectric material comprises an inorganic material. One of the first and second dielectric materials is etchable selective to the other dielectric material. A method of cleaning a semiconductor wafer processing chamber while a wafer remains residing within the chamber is also disclosed.Type: GrantFiled: October 14, 2003Date of Patent: October 24, 2006Assignees: Infineon Technologies AG, International Business Machines CorporationInventors: Kaushik Kumar, Douglas C. La Tulipe, Timothy Dalton, Larry Clevenger, Andy Cowley, Erdem Kaltalioglu, Jochen Schacht
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Patent number: 7122462Abstract: An interconnect structure in the back end of the line of an integrated circuit forms contacts between successive layers by removing material in the top surface of the lower interconnect in a cone-shaped aperture, the removal process extending through the liner of the upper aperture, and depositing a second liner extending down into the cone-shaped aperture, thereby increasing the mechanical strength of the contact, which then enhance the overall reliability of the integrated circuit.Type: GrantFiled: November 21, 2003Date of Patent: October 17, 2006Assignees: International Business Machines Corporation, Infineon Technologies, AGInventors: Lawrence A. Clevenger, Andrew P. Cowley, Timothy J. Dalton, Mark Hoinkis, Steffen K. Kaldor, Erdem Kaltalioglu, Kaushik A. Kumar, Douglas C. La Tulipe, Jr., Jochen Schacht, Andrew H. Simon, Terry A. Spooner, Yun-Yu Wang, Clement H. Wann, Chih-Chao Yang
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Patent number: 7091612Abstract: A dual damascene structure and method of fabrication thereof. An insulating layer comprises a first dielectric material and a second dielectric material, the second dielectric material being different from the first dielectric material. First conductive regions having a first pattern are formed in the first dielectric material, and second conductive regions having a second pattern are formed in the second dielectric material, the second pattern being different from the first pattern. One of the first dielectric material and the second dielectric material comprises an organic material, and the other dielectric material comprises an inorganic material. One of the first and second dielectric materials is etchable selective to the other dielectric material. A method of cleaning a semiconductor wafer processing chamber while a wafer remains residing within the chamber is also disclosed.Type: GrantFiled: October 14, 2003Date of Patent: August 15, 2006Assignees: Infineon Technologies AG, International Business Machines CorporationInventors: Kaushik Kumar, Timothy Dalton, Larry Clevenger, Andy Cowley, Douglas C. La Tulipe, Mark Hoinkis, Chih-Chao Yang, Yi-Hsiung Lin, Erdem Kaltalioglu, Markus Naujok, Jochen Schacht
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Patent number: 7074528Abstract: A photomask with desired illumination conditions can be constructed by combining a base pattern of openings with an assist pattern which includes openings that are offset from respectively corresponding openings of the base pattern by a preset angular distance.Type: GrantFiled: December 18, 2003Date of Patent: July 11, 2006Assignee: Infineon Technologies AGInventors: Jochen Schacht, Uwe Paul Schroeder, Benjamin Szu-Min Lin
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Publication number: 20060113278Abstract: A metal hardmask for use with a Dual Damascene process used in the manufacturing of semiconductor devices. The metal hardmask has advantageous translucent characteristics to facilitate alignment between levels while fabricating a semiconductor device and avoids the formation of metal oxide residue deposits. The metal hardmask comprises a first or primary layer of TiN (titanium nitride) and a second or capping layer of TaN (tantalum nitride).Type: ApplicationFiled: January 12, 2006Publication date: June 1, 2006Inventors: Kaushik Kumar, Lawrence Clevenger, Timothy Dalton, Douglas La Tulipe, Andy Cowley, Erdem Kaltalioglu, Jochen Schacht, Andrew Simon, Mark Hoinkis, Steffen Kaldor, Chih-Chao Yang
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Patent number: 7052621Abstract: A metal hardmask for use with a Dual Damascene process used in the manufacturing of semiconductor devices. The metal hardmask has advantageous translucent characteristics to facilitate alignment between levels while fabricating a semiconductor device and avoids the formation of metal oxide residue deposits. The metal hardmask comprises a first or primary layer of TiN (titanium nitride) and a second or capping layer of TaN (tantalum nitride).Type: GrantFiled: June 13, 2003Date of Patent: May 30, 2006Assignees: Infineon Technologies AG, International Business Machines CorporationInventors: Kaushik Kumar, Lawrence Clevenger, Timothy Dalton, Douglas C. La Tulipe, Andy Cowley, Erdem Kaltalioglu, Jochen Schacht, Andrew H. Simon, Mark Hoinkis, Steffen K. Kaldor, Chih-Chao Yang
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Publication number: 20060110903Abstract: In order to form a contact in a layer on a substrate, in particular a contact in a logic circuit in a semiconductor component, the mask layer is structured for etching of the contact holes with a photoresist layer which is exposed using two masks, with the first mask containing a regular pattern of contact structures with a period which corresponds to the order of magnitude of twice the edge length of the contact hole, and with the second mask containing a pattern with a structure which surrounds at least the contact hole area, and thus covers it.Type: ApplicationFiled: November 15, 2005Publication date: May 25, 2006Applicant: INFINEON TECHNOLOGIES AGInventors: Uwe Schroder, Jochen Schacht
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Publication number: 20050136336Abstract: A photomask with desired illumination conditions can be constructed by combining a base pattern of openings with an assist pattern which includes openings that are offset from respectively corresponding openings of the base pattern by a preset angular distance.Type: ApplicationFiled: December 18, 2003Publication date: June 23, 2005Inventors: Jochen Schacht, Uwe Schroeder, Benjamin Lin
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Publication number: 20050112864Abstract: An interconnect structure in the back end of the line of an integrated circuit forms contacts between successive layers by removing material in the top surface of the lower interconnect in a cone-shaped aperture, the removal process extending through the liner of the upper aperture, and depositing a second liner extending down into the cone-shaped aperture, thereby increasing the mechanical strength of the contact, which then enhance the overall reliability of the integrated circuit.Type: ApplicationFiled: November 21, 2003Publication date: May 26, 2005Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, INFINEON TECHNOLOGIES NORTH AMERICA CORPInventors: Lawrence Clevenger, Andrew Cowley, Timothy Dalton, Mark Hoinkis, Steffen Kaldor, Erdem Kaltalioglu, Kaushik Kumar, Douglas La Tulipe, Jr., Jochen Schacht, Andrew Simon, Terry Spooner, Yun-Yu Wang, Clement Wann, Chih-Chao Yang
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Publication number: 20050079706Abstract: A dual damascene structure and method of fabrication thereof. An insulating layer comprises a first dielectric material and a second dielectric material, the second dielectric material being different from the first dielectric material. First conductive regions having a first pattern are formed in the first dielectric material, and second conductive regions having a second pattern are formed in the second dielectric material, the second pattern being different from the first pattern. One of the first dielectric material and the second dielectric material comprises an organic material, and the other dielectric material comprises an inorganic material. One of the first and second dielectric materials is etchable selective to the other dielectric material. A method of cleaning a semiconductor wafer processing chamber while a wafer remains residing within the chamber is also disclosed.Type: ApplicationFiled: October 14, 2003Publication date: April 14, 2005Inventors: Kaushik Kumar, Douglas La Tulipe, Timothy Dalton, Larry Clevenger, Andy Cowley, Erdem Kaltalioglu, Jochen Schacht
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Publication number: 20050077628Abstract: A dual damascene structure and method of fabrication thereof. An insulating layer comprises a first dielectric material and a second dielectric material, the second dielectric material being different from the first dielectric material. First conductive regions having a first pattern are formed in the first dielectric material, and second conductive regions having a second pattern are formed in the second dielectric material, the second pattern being different from the first pattern. One of the first dielectric material and the second dielectric material comprises an organic material, and the other dielectric material comprises an inorganic material. One of the first and second dielectric materials is etchable selective to the other dielectric material. A method of cleaning a semiconductor wafer processing chamber while a wafer remains residing within the chamber is also disclosed.Type: ApplicationFiled: October 14, 2003Publication date: April 14, 2005Inventors: Kaushik Kumar, Timothy Dalton, Larry Clevenger, Andy Cowley, Douglas La Tulipe, Mark Hoinkis, Chih-Chao Yang, Yi-Hsiung Lin, Erdem Kaltalioglu, Markus Naujok, Jochen Schacht
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Publication number: 20040251234Abstract: A metal hardmask for use with a Dual Damascene process used in the manufacturing of semiconductor devices. The metal hardmask has advantageous translucent characteristics to facilitate alignment between levels while fabricating a semiconductor device and avoids the formation of metal oxide residue deposits. The metal hardmask comprises a first or primary layer of TiN (titanium nitride) and a second or capping layer of TaN (tantalum nitride).Type: ApplicationFiled: June 13, 2003Publication date: December 16, 2004Inventors: Kaushik Kumar, Lawrence Clevenger, Timothy Dalton, Douglas C. La Tulipe, Andy Cowley, Erdem Kaltalioglu, Jochen Schacht, Andrew H. Simon, Mark Hoinkis, Steffen K. Kaldor, Chih-Chao Yang