Abstract: Apparatuses including spark gap structures for electrical overstress (EOS) monitoring or protection, and associated methods, are disclosed. In an aspect, an energy management system includes an electric charging system that transmits electric energy to an electric energy storage system to charge a secondary battery, where one or both of the energy management system and the electric charging system include one or more EOS protection or monitoring devices for monitoring and/or protecting the respective system(s) from an EOS signal during energy transfer from the electric charging system to the electric energy storage system. The EOS protection or monitor device includes a spark gap formed by a pair of arcing electrodes fabricated on a substrate and configured to generate an arc discharge in response to the EOS signal.

Abstract: Apparatuses including spark gap structures for electrical overstress (EOS) monitoring or protection, and associated methods, are disclosed. In an aspect, a vertical spark gap device and a MEMS switch are formed on the substrate having a horizontal main surface. The MEMS switch includes a switch beam anchored at one end over the horizontal main surface and the vertical spark gap device includes one or more pairs of arcing electrodes fabricated on the substrate, where the arcing electrodes of each pair are vertically separated by an arcing gap and generate an arc discharge in response to an EOS signal received by the MEMS switch received between a first voltage node and a second voltage node. The MEMS switch and the vertical spark gap device have one or more corresponding structures that are co-fabricated such that the corresponding structures include the same material or have at least one common feature dimension.

Abstract: Aspects of the present disclosure provide a magnetoresistive track for use in a magnetic multi-turn sensor, the magnetoresistive track comprising one or more looped sections. The looped sections can include a crossing where the magnetoresistive track crosses itself at substantially 90 degrees. In some cases, the looped portions may be further provided with syphon structures to prevent domain walls propagating around the magnetoresistive track as an external magnetic field rotates from becoming stuck at the crossing or propagating in the wrong direction at the crossing.

Abstract: Example magnetic sensor system includes a magnet mounted on a rotatable shaft, and a magnetic sensing device in a vicinity of the magnet. The magnetic sensing device includes an angle sensor configured to detect an orientation of a magnetic field generated by the magnet as the rotatable shaft is rotated, a magnetic multi-turn sensor configured to detect a number of turns of the magnetic field generated by the magnet as the rotatable shaft is rotated, a magnetic disk mounted on the rotatable shaft, wherein the disk comprises at least a first track for inducing a change in a magnetic field generated by the magnetic disk, wherein the first track is formed from a plurality of curved segments distributed around the circumference of the magnetic disk, and a first incremental sensor configured to detect changes in the magnetic field induced by the first track as the rotatable shaft is rotated.

Abstract: The present disclosure provides a device for initializing a multi-turn sensor that initializes the sensor almost instantaneously, thereby consuming very little energy. The initialisation device is provided in the form of a conductor that is placed a small distance above or below the sensor spiral, the conductor being configured so that it crosses at least two opposing corners of the spiral. A sequence of current pulses is then applied to the conductor, wherein each current pulse is applied to a different part of the conductor such that a magnetic field is generated by the conductor to thereby generate pairs of domain walls in the magnetoresistive elements defining at least one corner region of spiral. Once the domain walls have been nucleated, the external magnetic field will drive the pairs of domain walls away from each other towards the adjacent corners, changing the magnetic alignment of the tracks as they pass through.

Abstract: Aspects of the present disclosure include using particles in phase change materials to track temperature change of an object. The particles may be initially disposed at specific locations within the phase change materials. As the phase change materials transition from the solid state to the fluid state, the particles may move from the initial locations to different locations. The change in locations of the particles may be detected magnetically, electrically, optically, and/or visually. Such change may indicate that the object experienced a temperate above at least one phase transition temperature of the phase change materials.

Abstract: Aspects of this disclosure relate to force based on movement of magnetically sensitive material. In embodiments, first magnetically sensitive material and second magnetically sensitive material can be in an initial position. According to such embodiments, one or more sensors to detect force based on relative position of the first magnetically sensitive material and the second magnetically sensitive in a second position. Related systems and methods for force detection are disclosed.

Abstract: Aspects of this disclosure relate to force based on movement of magnetically sensitive material. In embodiments, first magnetically sensitive material and second magnetically sensitive material can be in an initial position. According to such embodiments, one or more sensors to detect force based on relative position of the first magnetically sensitive material and the second magnetically sensitive in a second position. Related systems and methods for force detection are disclosed.

Abstract: The present disclosure provides tunnel magnetoresistive (TMR) multi-turn (MT) sensors with improved sensor read-out and methods of manufacturing said sensors. In some examples, the TMR sensing elements of the MT sensor are each provided with two or more electrical contacts for performing current-in-plane tunnelling measurements. The two or more electrical contacts may be provided above or below the TMR sensing elements. In further examples, one or more read-out pillars formed from TMR sensing material may be provided, the read-out pillars being electrically connected to one or more TMR sensing elements. The read-out pillars are configured such that the resistance observed in the read-out pillars is negligible or near-negligible relative to that observed in the TMR sensing elements, such that the measured output signal only reflects the change in resistance experience by the TMR sensing elements in the presence of an externally rotating magnetic field.

Abstract: The present disclosure provides a magnetic multi-turn sensor having a length of magnetoresistive film, wherein the magnetoresistive film comprises a free layer of ferromagnetic material. The free-layer of ferromagnetic material has at least one region of increased thickness, relative to a thickness of the free-layer along the rest of the length of magnetoresistive film. In particular, the free layer is provided with an increased thickness in regions where an increased operating window is required. For example, in closed loop sensors, the points in which two section of magnetoresistive film cross (e.g., to close the loop) may require a higher magnetic operating window to prevent domain wall nucleation in that region.

Abstract: Apparatuses including spark gap structures for electrical overstress (EOS) monitoring or protection, and associated methods, are disclosed. In an aspect, a spark gap device includes first and second conductive layers formed over a substrate, where the first and second conductive layers are electrically connected to first and second voltage nodes, respectively. The first conductive layer includes a plurality of arcing tips configured to form arcing electrode pairs with the second conductive layer to form an arc discharge in response to an EOS voltage between the first and second voltage nodes. The spark gap device further includes a series ballast resistor electrically connected between the arcing tips and the first voltage node, where the ballast resistor in formed in a metallization layer over the substrate and a resistance of the series ballast resistor is substantially higher than a resistance of the second conductive layer.

Abstract: The present disclosure provides a magnetic arrangement for use with a magnetic sensing device comprising an angle sensor and multi-turn sensor, the magnetic sensing device being arranged in off-shaft position. Specifically, the present disclosure provides a diametrically magnetized magnet in which the amount of magnetic material in the region of the magnetic poles is reduced relative to the regions between the magnet poles to thereby provide a more homogenous magnetic flux density. In doing so, this enables the magnet and the sensing device to be arranged more compactly. The present disclosure also provides a method of magnetising the magnetic arrangements described herein for improving the accuracy of the angle sensing measurements when the sensing device is placed in an off-shaft position, wherein the magnet is magnetised in a specific direction by applying a current to two sets of electrical conductors positioned on opposite sides of the magnet.

Abstract: Aspects of this disclosure relate to force based on movement of magnetically sensitive material. In embodiments, first magnetically sensitive material and second magnetically sensitive material can be in an initial position. According to such embodiments, one or more sensors to detect force based on relative position of the first magnetically sensitive material and the second magnetically sensitive in a second position. Related systems and methods for force detection are disclosed.

Abstract: The present disclosure provides tunnel magnetoresistive (TMR) multi-turn (MT) sensors with improved sensor read-out and methods of manufacturing said sensors. In some examples, the TMR sensing elements of the MT sensor are each provided with two or more electrical contacts for performing current-in-plane tunnelling measurements. The two or more electrical contacts may be provided above or below the TMR sensing elements. In further examples, one or more read-out pillars formed from TMR sensing material may be provided, the read-out pillars being electrically connected to one or more TMR sensing elements. The read-out pillars are configured such that the resistance observed in the read-out pillars is negligible or near-negligible relative to that observed in the TMR sensing elements, such that the measured output signal only reflects the change in resistance experience by the TMR sensing elements in the presence of an externally rotating magnetic field.

Abstract: Aspects of this disclosure relate to force based on a profile of magnetically sensitive material in a container. One or more sensors can detect the profile of the magnetically sensitive material, where the profile is associated with a force applied to the container. The profile includes magnetically sensitive material concentrated in one or more particular areas within the container. Related systems and methods for force detection are disclosed.

Abstract: Aspects of this disclosure relate to detecting temperature based on movement of one or more particles within a container. The container includes a medium material. Mobility of the one or more particles in the medium material changes in response to a change in temperature.

Abstract: The present disclosure provides magnetic sensor system that includes a magnetic sensing device comprising a magnetic multi-turn sensor, and a method of initializing the magnetic multi-turn sensor into a known state with a defined domain wall configuration. A strong magnetic field is first applied to fill the MT sensor with domain walls. A current is then applied to a domain wall stopping structure arranged over at least one portion of the MT sensor, and the working magnetic field (i.e., the magnetic field generated by a magnet mounted on the mechanical system) is rotated until the desired domain wall configuration is achieved. Once the desired domain wall configuration is achieved, the current applied to the domain wall stopping structure is stopped and the MT sensor is ready for use. The sensor can be initialized into a known state without needing to drive the mechanical system to a start or end position.

Abstract: Disclosed herein are techniques for detecting runout of a rotating mechanical component. In example, detection of runout of a rotating mechanical component is performed using an angular position signal generated by a magnetic angular position sensor that is arranged for use in determining an angular position of the rotating mechanical component.

Abstract: The present disclosure provides a magnetoresistive quadrant detector for use in a magnetic sensing device comprising a magnetic multi-turn sensor and an angle turn sensor, in particular, an angle sensor configured to provide 180° absolute angle measurements, such as an anisotropic magnetoresistive (AMR) angle sensor. The quadrant detector is formed of at least two magnetoresistive elements, preferably giant magnetoresistive (GMR) elements, which may be integrated to the multi-turn sensor die or provided on a separate die within the sensor package. The magnetoresistive elements are configured to provide a unique combination of resistance states for each quadrant of magnetic field direction. This quadrant information can then be used to remedy any ambiguities in the multi-turn measurement without needing 360° absolute angle information from the single turn angle sensor.

Abstract: Aspects of this disclosure relate to systems and methods for re-magnetization of a multi-turn loop. In one aspect, a multi-turn magnetic sensing system includes a multi-turn loop through which domain walls propagate in response to rotation of a magnetic field and a magnetization component configured to provide domain walls to the multi-turn loop. The system further includes one or more wires configured to annihilate at least two of the domain walls of the multi-turn loop.