Abstract: The present disclosure provides tunnel magnetoresistive (TMR) multi-turn (MT) sensors with improved sensor read-out and methods of manufacturing said sensors. In some examples, the TMR sensing elements of the MT sensor are each provided with two or more electrical contacts for performing current-in-plane tunnelling measurements. The two or more electrical contacts may be provided above or below the TMR sensing elements. In further examples, one or more read-out pillars formed from TMR sensing material may be provided, the read-out pillars being electrically connected to one or more TMR sensing elements. The read-out pillars are configured such that the resistance observed in the read-out pillars is negligible or near-negligible relative to that observed in the TMR sensing elements, such that the measured output signal only reflects the change in resistance experience by the TMR sensing elements in the presence of an externally rotating magnetic field.

Abstract: Aspects of this disclosure relate to force based on a profile of magnetically sensitive material in a container. One or more sensors can detect the profile of the magnetically sensitive material, where the profile is associated with a force applied to the container. The profile includes magnetically sensitive material concentrated in one or more particular areas within the container. Related systems and methods for force detection are disclosed.

Abstract: Aspects of this disclosure relate to detecting temperature based on movement of one or more particles within a container. The container includes a medium material. Mobility of the one or more particles in the medium material changes in response to a change in temperature.

Abstract: The present disclosure provides magnetic sensor system that includes a magnetic sensing device comprising a magnetic multi-turn sensor, and a method of initializing the magnetic multi-turn sensor into a known state with a defined domain wall configuration. A strong magnetic field is first applied to fill the MT sensor with domain walls. A current is then applied to a domain wall stopping structure arranged over at least one portion of the MT sensor, and the working magnetic field (i.e., the magnetic field generated by a magnet mounted on the mechanical system) is rotated until the desired domain wall configuration is achieved. Once the desired domain wall configuration is achieved, the current applied to the domain wall stopping structure is stopped and the MT sensor is ready for use. The sensor can be initialized into a known state without needing to drive the mechanical system to a start or end position.

Abstract: Disclosed herein are techniques for detecting runout of a rotating mechanical component. In example, detection of runout of a rotating mechanical component is performed using an angular position signal generated by a magnetic angular position sensor that is arranged for use in determining an angular position of the rotating mechanical component.

Abstract: The present disclosure provides a magnetoresistive quadrant detector for use in a magnetic sensing device comprising a magnetic multi-turn sensor and an angle turn sensor, in particular, an angle sensor configured to provide 180° absolute angle measurements, such as an anisotropic magnetoresistive (AMR) angle sensor. The quadrant detector is formed of at least two magnetoresistive elements, preferably giant magnetoresistive (GMR) elements, which may be integrated to the multi-turn sensor die or provided on a separate die within the sensor package. The magnetoresistive elements are configured to provide a unique combination of resistance states for each quadrant of magnetic field direction. This quadrant information can then be used to remedy any ambiguities in the multi-turn measurement without needing 360° absolute angle information from the single turn angle sensor.

Abstract: Aspects of this disclosure relate to systems and methods for re-magnetization of a multi-turn loop. In one aspect, a multi-turn magnetic sensing system includes a multi-turn loop through which domain walls propagate in response to rotation of a magnetic field and a magnetization component configured to provide domain walls to the multi-turn loop. The system further includes one or more wires configured to annihilate at least two of the domain walls of the multi-turn loop.

Abstract: Aspects of the present disclosure include using particles in phase change materials to track temperature change of an object. The particles may be initially disposed at specific locations within the phase change materials. As the phase change materials transition from the solid state to the fluid state, the particles may move from the initial locations to different locations. The change in locations of the particles may be detected magnetically, electrically, optically, and/or visually. Such change may indicate that the object experienced a temperate above at least one phase transition temperature of the phase change materials.

Abstract: Aspects of this disclosure relate to adjusting fluid flow using magnetically sensitive particles. Fluid can flow through an opening in a container. Magnetically sensitive particles can be confined within the container. A magnetic field can be applied to move the magnetically sensitive particles in the container to adjust flow of the fluid through the opening.

Abstract: A measurement system and method of manufacture can include: a magnet mounted on a rotatable shaft; a first magnetic sensing device for detecting a first magnetic field from the magnet, the first magnetic sensing device comprising: an angle sensor configured to detect an orientation of the first magnetic field and a magnetic multi-turn sensor configured to detect a number of turns of the first magnetic field; and a second magnetic sensing device comprising a magnetic target mounted on the rotatable shaft and an incremental sensor configured to detect a second magnetic field, the magnetic target comprises a track for inducing a change in the second magnetic field.

Abstract: Aspects of this disclosure relate to particles that can move in response to a magnetic field. A system can include a container, particles within the container, and a magnetic structure integrated with the container. The magnetic structure can magnetically interact with both an external magnetic field and the particles. Related methods are disclosed including magnetic field detection methods based on detection of particles within a container.

Abstract: A magnetic sensor package comprising a magnetic multi-turn sensor die and a magnetic single turn sensor die, in which both sensor dies are packaged on the same lead frame. A method of manufacturing the magnetic sensor package is also provided. A magnetic sensor system comprising a rotating magnet and the magnetic sensor package, where the sensor package is arranged so that both sensor dies sit within a homogenous magnetic field, thereby ensuring that the output signal of each sensor is not corrupted by any stray fields.

Abstract: The techniques described are applicable to closed-loop magnetic multi-turn sensors including giant magnetoresistance (GMR-MT) sensors as well as tunnel magnetoresistive (TMR) multi-turn sensors. Techniques, e.g., lithography techniques, are described to form crossings so that a distortion of an ideal shape is reduced or minimized. Another aspect describes techniques to modify the material thickness and/or magnetic properties in such an area of the crossing. Yet another aspect describes techniques to locally weaken the applied field in the area of the crossing to prevent nucleation events in this area. The techniques described are applicable to closed-loop magnetic multi-turn sensors including giant magnetoresistance (GMR-MT) sensors as well as tunnel magnetoresistive (TMR) multi-turn sensors.

Abstract: Aspects of this disclosure relate to one or more particles that move within a container in response to a magnetic field. A measurement circuit is configured to output an indication of the magnetic field based on position of the one or more particles.

Abstract: A tunnel magnetoresistive (TMR) multi-turn (MT) sensor can include sensing elements which can be provided with two or more electrical contacts for performing current-in-plane tunnelling measurements. The two or more electrical contacts may be provided above or below the TMR sensing elements. One or more read-out pillars formed from TMR sensing material may be provided, the read-out pillars being electrically connected to one or more TMR sensing elements. The read-out pillars can be configured such that the resistance observed in the read-out pillars is negligible or near-negligible relative to that observed in the TMR sensing elements, such that the measured output signal only reflects the change in resistance experience by the TMR sensing elements in the presence of an externally rotating magnetic field.

Abstract: Aspects of the present disclosure provide a magnetoresistive track for use in a magnetic multi-turn sensor, the magnetoresistive track comprising one or more looped sections. The looped sections can include a crossing where the magnetoresistive track crosses itself at substantially 90 degrees. In some cases, the looped portions may be further provided with syphon structures to prevent domain walls propagating around the magnetoresistive track as an external magnetic field rotates from becoming stuck at the crossing or propagating in the wrong direction at the crossing.

Abstract: The present disclosure provides magnetic sensor system that includes a magnet mounted on the end of a rotating shaft, a magnetic sensing device comprising a magnetic multi-turn sensor, and a mechanism for initializing the magnetic multi-turn sensor into a known state ready for use. Whilst the magnetic sensing device is being used to monitor the rotation of the shaft, the magnet is located in a starting position a first distance from the magnet sensing device such that the magnet field strength experienced by the magnet sensing device is within the operating window of the magnet multi-turn sensor, the operating window being defined by a minimum magnetic flux density, Bmin, and a maximum magnetic flux density, Bmax. The mechanism comprises a means for moving the magnet and the shaft in an axial direction towards the magnet sensing device such that the magnetic field experienced by the magnet sensing device exceeds the upper limit, Bmax, of the operating window.

Abstract: Apparatuses including spark gap structures for electrical overstress (EOS) monitoring or protection, and associated methods, are disclosed. In an aspect, a vertical spark gap device includes a substrate having a horizontal main surface and a plurality of pairs of conductive layers over the horizontal main surface. Different ones of the pairs are separated by different vertical distances such that each pair serves as an arcing electrode pair and different ones of the arcing electrode pairs are configured to arc discharge at different voltages.

Abstract: Apparatuses including spark gap structures for electrical overstress (EOS) monitoring or protection, and associated methods, are disclosed. In an aspect, a vertical spark gap device includes a substrate having a horizontal main surface, a first conductive layer and a second conductive layer each extending over the substrate and substantially parallel to the horizontal main surface while being separated in a vertical direction crossing the horizontal main surface. One of the first and second conductive layers is electrically connected to a first voltage node and the other of the first and second conductive layers is electrically connected to a second voltage node. The first and second conductive layers serve as one or more arcing electrode pairs and have overlapping portions configured to generate one or more arc discharges extending generally in the vertical direction in response to an EOS voltage signal received between the first and second voltage nodes.

Abstract: Apparatuses including spark gap structures for electrical overstress (EOS) monitoring or protection, and associated methods, are disclosed. In an aspect, a spark gap device includes first and second conductive layers formed over a substrate, where the first and second conductive layers are electrically connected to first and second voltage nodes, respectively. The first conductive layer includes a plurality of arcing tips configured to form arcing electrode pairs with the second conductive layer to form an arc discharge in response to an EOS voltage between the first and second voltage nodes. The spark gap device further includes a series ballast resistor electrically connected between the arcing tips and the first voltage node, where the ballast resistor in formed in a metallization layer over the substrate and a resistance of the series ballast resistor is substantially higher than a resistance of the second conductive layer.