Abstract: A method of manufacturing silicon wafers that include a front surface and a block surface and lateral edges, includes forming a silicon wafer by separating a rectangular, in particular, silicon block with lateral surfaces and before separation, grounding and/or polishing the lateral surfaces of the silicon block parallel to the edge of the silicon wafer.

Abstract: The method of manufacturing silicon wafers from one or more silicon blocks or bricks includes etching at least one lateral surface of a silicon block or brick using a mixture of highly oxidative acids and then forming a plurality of wafers by sawing the silicon block or brick. During the etching of the lateral surface a mean amount of material removed is 3 to 160 ?m thick and the material is isotropically removed with a constant mean material removal speed of from 1 to 20 ?m/min across the entire lateral surface. Prior to the etching treatment the silicon block or brick is advantageously subjected to an abrasive grinding or polishing. The mixture of acids is preferably a mixture of 50 to 70% nitric and 40 to 60% hydrofluoric acids in a ratio range of 8:1 to 4:1.

Abstract: A method of manufacturing silicon wafers that include a front surface and a block surface and lateral edges, includes forming a silicon wafer by separating a rectangular, in particular, silicon block with lateral surfaces and before separation, grounding and/or polishing the lateral surfaces of the silicon block parallel to the edge of the silicon wafer.