Abstract: The present invention relates to a method of at least one of sintering, crystallization and/or crosslinking of a coating material (2) on a substrate (1) with laser radiation. The coating material (2) is scanned with a laser beam (8) along overlapping processing traces, said scanning being performed by moving the laser beam (8) with a first speed in a first direction while the substrate is moved with a second speed slower than the first speed relative to the laser beam (8) or vice versa in a second direction perpendicular to the first direction. The intensity of the laser beam (8), the first speed and a ratio of the first speed and the second speed are selected such that the overlap of the processing traces on the coating material (2) results in local peak temperatures of the coating material (2) above a threshold temperature (17) which are repeatedly reached within a time period (18).

Abstract: A thin film manufacturing apparatus is disclosed, including a liquid ejecting unit which ejects a liquid onto an object on which a film is to be formed and which forms a coating film; a first laser irradiating unit which continuously irradiates a laser light onto the coating film and which evaporates a solvent of the coating film; and a second laser irradiating unit which irradiates a laser light pulse onto the coating film of which the solvent is evaporated and which crystallizes the coating film of which the solvent is evaporated.

Abstract: The invention relates to a method for deposition of at least one electrically conducting film (20) on a substrate (30), comprising the steps: selecting a layer (10) of a film material, wherein the layer (10) comprises a mask (40) on a front side (11) and wherein the layer (10) and the mask (40) are one piece, positioning the front side (11) of the layer (10) upon the substrate (30), applying at least one laser pulse (120) onto a back side (12) of the layer (10), so as to melt and to vaporize at least parts of the layer (10) such that melt droplets (110) are propelled toward and deposited upon said substrate (30), forming the film (20), wherein at least one slot (45) of the mask (40) limits the distribution of said melt droplets (110).