Patents by Inventor Jochen Willi. Poth

Jochen Willi. Poth has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transistor element including a buried insulating layer having enhanced functionality
    Patent number: 10319732
    Abstract: In sophisticated SOI transistor elements, the buried insulating layer may be specifically engineered so as to include non-standard dielectric materials. For instance, a charge-trapping material and/or a high-k dielectric material and/or a ferroelectric material may be incorporated into the buried insulating layer. In this manner, non-volatile storage transistor elements with superior performance may be obtained and/or efficiency of a back-bias mechanism may be improved.
    Type: Grant
    Filed: June 14, 2017
    Date of Patent: June 11, 2019
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Ralf Richter, Jochen Willi. Poth, Sven Beyer, Stefan Duenkel, Sandhya Chandrashekhar, Zhi-Yuan Wu
  • TRANSISTOR ELEMENT INCLUDING A BURIED INSULATING LAYER HAVING ENHANCED FUNCTIONALITY
    Publication number: 20180366484
    Abstract: In sophisticated SOI transistor elements, the buried insulating layer may be specifically engineered so as to include non-standard dielectric materials. For instance, a charge-trapping material and/or a high-k dielectric material and/or a ferroelectric material may be incorporated into the buried insulating layer. In this manner, non-volatile storage transistor elements with superior performance may be obtained and/or efficiency of a back-bias mechanism may be improved.
    Type: Application
    Filed: June 14, 2017
    Publication date: December 20, 2018
    Inventors: Ralf Richter, Jochen Willi. Poth, Sven Beyer, Stefan Duenkel, Sandhya Chandrashekhar, Zhi-Yuan Wu