Abstract: An embodiment of the instant invention is a method of fabricating a semiconductor device with a patterned dielectric layer having an upper surface and an opening with a bottom and sidewalls formed over a semiconductor substrate, the method comprising the steps of: forming a liner layer (layer 434 of FIGS. 1b-1d) on the upper surface of the patterned dielectric layer and on the bottom and the sidewalls of the opening in the patterned dielectric layer; forming a conductive layer (layer 436 of FIGS.

Abstract: The present invention relates to integrated circuits (ICs) fabrication. Particularly, there is a CMP process which incorporates small quantities of two chemicals. The first chemical is the standard slurry mixtures, like water, aluminum-oxide and hydrogen-peroxide mixed into a slurry. The second chemical is a strong base chemical, like KOH, or potassium hydroxide. Moreover, the CMP process utilizes a system of closely regulating the timing of the two chemical processes. Specifically, during a first time period, both chemicals are applied; thus providing a given speed of the chemical removal of tungsten material. During a second time period, the KOH is removed, so as to slow down the chemical action and facilitate a greater degree of planarization.

Abstract: The present invention relates to integrated circuits (ICs) fabrication. Particularly, there is a cmp process which incorporates small quantities of two chemicals. The first chemical is the standard slurry mixtures, like water, aluminum-oxide and hydrogen-peroxide mixed into a slurry. The second chemical is a strong base chemical, like KOH, or potassium hydroxide. Moreover, the cmp process utilizes a system of closely regulating the timing of the two chemical process. Specifically, during a first time period, both chemicals are applied; thus increasing speed of the chemical removal of tungsten material. During a second time period, the KOH is removed, thus slowing down the chemical action and importantly achieving a greater degree of planerization than is capable by the two chemical first time period.

Abstract: The present invention relates to integrated circuits (ICs) fabrication. Particularly, there is a cmp process which incorporates small quantities of two chemicals. The first chemical is the standard slurry mixtures, like water, aluminum-oxide and hydrogen-peroxide mixed into a slurry. The second chemical is a strong base chemical, like KOH, or potassium hydroxide. Moreover, the cmp process utilizes a system of closely regulating the timing of the two chemical process. Specifically, during a first time period, both chemicals are applied; thus increasing speed of the chemical removal of tungsten material. During a second time period, the KOH is removed, thus slowing down the chemical action and importantly achieving a greater degree of planerization than is capable by the two chemical first time period.