Patents by Inventor Joe Feng
Joe Feng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10424687Abstract: A photovoltaic device includes an intrinsic layer having two or more sublayers. The sublayers are intentionally deposited to include complementary concave and convex shapes. The sum of these layers resulting in a relatively flat surface for deposition of n- or p-doped layers. The photovoltaic device is optionally bifacial.Type: GrantFiled: September 16, 2016Date of Patent: September 24, 2019Assignee: Aptos Energy, LLCInventors: Thanh Ngoc Pham, Joe Feng
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Patent number: 10205038Abstract: A photovoltaic device includes an intrinsic layer having two or more sublayers. The sublayers are intentionally deposited to include complementary concave and convex shapes. The sum of these layers resulting in a relatively flat surface for deposition of n- or p-doped layers. The photovoltaic device is optionally bifacial.Type: GrantFiled: September 12, 2016Date of Patent: February 12, 2019Assignee: Aptos Energy, LLCInventors: Thanh Ngoc Pham, Joe Feng
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Publication number: 20180166597Abstract: A photovoltaic device includes an intrinsic layer having two or more sublayers. The sublayers are intentionally deposited to include complementary concave and convex shapes. The sum of these layers resulting in a relatively flat surface for deposition of n- or p-doped layers. The photovoltaic device is optionally bifacial.Type: ApplicationFiled: September 16, 2016Publication date: June 14, 2018Inventors: Thanh Ngoc Pham, Joe Feng
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Patent number: 9972743Abstract: A photovoltaic device includes an intrinsic layer having two or more sublayers. The sublayers are intentionally deposited to include complementary concave and convex shapes. The sum of these layers resulting in a relatively flat surface for deposition of n- or p-doped layers. The photovoltaic device is optionally bifacial.Type: GrantFiled: September 16, 2016Date of Patent: May 15, 2018Assignee: Aptos Energy, LLCInventors: Thanh Ngoc Pham, Joe Feng
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Publication number: 20180040759Abstract: A photovoltaic device includes an intrinsic layer having two or more sublayers. The sublayers are intentionally deposited to include complementary concave and convex shapes. The sum of these layers resulting in a relatively flat surface for deposition of n- or p-doped layers. The photovoltaic device is optionally bifacial.Type: ApplicationFiled: September 12, 2016Publication date: February 8, 2018Applicant: Aptos Energy, LLCInventors: Thanh Ngoc Pham, Joe Feng
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Patent number: 7070657Abstract: This invention provides a stable process for depositing an antireflective layer. Helium gas is used to lower the deposition rate of plasma-enhanced silane oxide, silane oxynitride, and silane nitride processes. Helium is also used to stabilize the process, so that different films can be deposited. The invention also provides conditions under which process parameters can be controlled to produce antireflective layers with varying optimum refractive index, absorptive index, and thickness for obtaining the desired optical behavior.Type: GrantFiled: October 15, 1999Date of Patent: July 4, 2006Assignee: Applied Materials Inc.Inventors: David Cheung, Joe Feng, Judy H. Huang, Wai-Fan Yau
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Patent number: 6951826Abstract: The present invention generally provides a process for depositing silicon carbide using a silane-based material with certain process parameters that is useful for forming a suitable ARC for IC applications. Under certain process parameters, a fixed thickness of the silicon carbide may be used on a variety of thicknesses of underlying layers. The thickness of the silicon carbide ARC is substantially independent of the thickness of the underlying layer for a given reflectivity, in contrast to the typical need for adjustments in the ARC thickness for each underlying layer thickness to obtain a given reflectivity. Another aspect of the invention includes a substrate having a silicon carbide anti-reflective coating, comprising a dielectric layer deposited on the substrate and a silicon carbide anti-reflective coating having a dielectric constant of less than about 7.0 and preferably about 6.0 or less.Type: GrantFiled: October 9, 2003Date of Patent: October 4, 2005Assignee: Applied Materials, Inc.Inventors: Christopher Bencher, Joe Feng, Mei-Yee Shek, Chris Ngai, Judy Huang
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Publication number: 20050181623Abstract: The present invention generally provides a process for depositing silicon carbide using a silane-based material with certain process parameters that is useful for forming a suitable ARC for IC applications. Under certain process parameters, a fixed thickness of the silicon carbide may be used on a variety of thicknesses of underlying layers. The thickness of the silicon carbide ARC is substantially independent of the thickness of the underlying layer for a given reflectivity, in contrast to the typical need for adjustments in the ARC thickness for each underlying layer thickness to obtain a given reflectivity. Another aspect of the invention includes a substrate having a silicon carbide anti-reflective coating, comprising a dielectric layer deposited on the substrate and a silicon carbide anti-reflective coating having a dielectric constant of less than about 7.0 and preferably about 6.0 or less.Type: ApplicationFiled: October 9, 2003Publication date: August 18, 2005Inventors: Christopher Bencher, Joe Feng, Mei-Yee Shek, Chris Ngai, Judy Huang
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Patent number: 6797646Abstract: Embodiments of the present invention provide nitrogen doping of a fluorinated silicate glass (FSG) layer to improve adhesion between the nitrogen-containing FSG layer and other layers such as barrier layers. In some embodiments, a nitrogen-containing FSG layer is deposited on a substrate in a process chamber by supplying a gaseous mixture to the process chamber. The gaseous mixture comprises a silicon-containing gas, a fluorine-containing gas, an oxygen-containing gas, and a nitrogen-containing gas. Energy is provided to the gaseous mixture to deposit the nitrogen-containing FSG layer onto the substrate. A plasma may be formed from the gaseous mixture to deposit the layer. In some embodiments, an FSG film that has been formed is doped with nitrogen by a plasma treatment using a nitrogen-containing chemistry. For example, nitrogen ashing in a damascene process may introduce nitrogen dopants into the surface of the FSG layer.Type: GrantFiled: January 12, 2001Date of Patent: September 28, 2004Assignee: Applied Materials Inc.Inventors: Christopher Ngai, Christopher D. Bencher, Joe Feng, Peter Chen
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Patent number: 6656840Abstract: A method for forming a microelectronics device is disclosed. In one embodiment, the method includes depositing a conductive structure on a substrate. A first layer comprising silicon and nitrogen is formed on the substrate. A second layer comprising silicon and nitrogen is then formed on the first layer. The nitrogen to silicon ratio in the first layer is greater than the nitrogen to silicon ratio in the second layer.Type: GrantFiled: April 29, 2002Date of Patent: December 2, 2003Assignee: Applied Materials Inc.Inventors: Nagarajan Rajagopalan, Joe Feng, Christopher S Ngai, Meiyee (Maggie Le) Shek, Suketu A Parikh, Linh H Thanh
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Publication number: 20030203614Abstract: A method for forming a microelectronics device is disclosed. In one embodiment, the method includes depositing a conductive structure on a substrate. A first layer comprising silicon and nitrogen is formed on the substrate. A second layer comprising silicon and nitrogen is then formed on the first layer. The nitrogen to silicon ratio in the first layer is greater than the nitrogen to silicon ratio in the second layer.Type: ApplicationFiled: April 29, 2002Publication date: October 30, 2003Applicant: APPLIED MATERIALS, INC.Inventors: Nagarajan Rajagopalan, Joe Feng, Christopher S. Ngai, Meiyee Shek, Suketu A. Parikh, Linh H. Thanh
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Patent number: 6635583Abstract: The present invention generally provides a process for depositing silicon carbide using a silane-based material with certain process parameters that is useful for forming a suitable ARC for IC applications. The same material may also be used as a barrier layer and an etch stop, even in complex damascene structures and with high diffusion conductors such as copper as a conductive material. Under certain process parameters, a fixed thickness of the silicon carbide may be used on a variety of thicknesses of underlying layers. The thickness of the silicon carbide ARC is substantially independent of the thickness of the underlying layer for a given reflectivity, in contrast to the typical need for adjustments in the ARC thickness for each underlying layer thickness to obtain a given reflectivity.Type: GrantFiled: December 23, 1998Date of Patent: October 21, 2003Assignee: Applied Materials, Inc.Inventors: Christopher Bencher, Joe Feng, Mei-Yee Shek, Chris Ngai, Judy Huang
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Patent number: 6562544Abstract: This invention provides a method and apparatus for depositing a silicon oxide film over an antireflective layer to reduce footing experienced in the a subsequently applied photoresist layer without substantially altering the optical qualities of the antireflective layer. The invention thereby provides more accurate etching of underlying layers during patterning operations. The invention is also capable of providing more accurate patterning of thin films by reducing inaccuracies caused by excessive etching of photoresist during patterning. Additionally, the film of the present invention may be patterned and used as a mask in the patterning of underlying layers.Type: GrantFiled: November 4, 1996Date of Patent: May 13, 2003Assignee: Applied Materials, Inc.Inventors: David Cheung, Joe Feng, Judy H. Huang, Wai-Fan Yau
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Publication number: 20030030057Abstract: The present invention generally provides a process for depositing silicon carbide using a silane-based material with certain process parameters that is useful for forming a suitable ARC for IC applications. The same material may also be used as a barrier layer and an etch stop, even in complex damascene structures and with high diffusion conductors such as copper as a conductive material. Under certain process parameters, a fixed thickness of the silicon carbide may be used on a variety of thicknesses of underlying layers. The thickness of the silicon carbide ARC is substantially independent of the thickness of the underlying layer for a given reflectivity, in contrast to the typical need for adjustments in the ARC thickness for each underlying layer thickness to obtain a given reflectivity.Type: ApplicationFiled: December 23, 1998Publication date: February 13, 2003Inventors: CHRISTOPHER BENCHER, JOE FENG, MEI-YEE SHEK, CHRIS NGAI, JUDY HUANG
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Publication number: 20020133258Abstract: Embodiments of the present invention provide nitrogen doping of a fluorinated silicate glass (FSG) layer to improve adhesion between the nitrogen-containing FSG layer and other layers such as barrier layers. In some embodiments, a nitrogen-containing FSG layer is deposited on a substrate in a process chamber by supplying a gaseous mixture to the process chamber. The gaseous mixture comprises a silicon-containing gas, a fluorine-containing gas, an oxygen-containing gas, and a nitrogen-containing gas. Energy is provided to the gaseous mixture to deposit the nitrogen-containing FSG layer onto the substrate. A plasma may be formed from the gaseous mixture to deposit the layer. In some embodiments, an FSG film that has been formed is doped with nitrogen by a plasma treatment using a nitrogen-containing chemistry. For example, nitrogen ashing in a damascene process may introduce nitrogen dopants into the surface of the FSG layer.Type: ApplicationFiled: January 12, 2001Publication date: September 19, 2002Applicant: Applied Materials. Inc.Inventors: Christopher Ngai, Christopher D. Bencher, Joe Feng, Peter Chen
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Patent number: 6324439Abstract: This invention provides a stable process for depositing films which include silicon and nitrogen, such as antireflective coatings of silicon oxynitride. Nitrogen is employed to permit lower flow rates of the process gas containing silicon, thereby reducing the deposition rate and providing better control of film thickness. Additionally, the use of nitrogen stabilizes the process, improving film uniformity, and provides a higher-quality film. The invention is capable of providing more accurate and easier fabrication of structures requiring uniformly thin films containing silicon, nitrogen, and, optionally, oxygen, such as antireflective coatings.Type: GrantFiled: May 16, 2000Date of Patent: November 27, 2001Assignee: Applied Materials, Inc.Inventors: David Cheung, Joe Feng, Madhu Deshpande, Wai-Fan Yau, Judy H. Huang
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Patent number: 6083852Abstract: This invention provides a stable process for depositing films which include silicon and nitrogen, such as antireflective coatings of silicon oxynitride. Nitrogen is employed to permit lower flow rates of the process gas containing silicon, thereby reducing the deposition rate and providing better control of film thickness. Additionally, the use of nitrogen stabilizes the process, improving film uniformity, and provides a higher-quality film. The invention is capable of providing more accurate and easier fabrication of structures requiring uniformly thin films containing silicon, nitrogen, and, optionally, oxygen, such as antireflective coatings.Type: GrantFiled: May 7, 1997Date of Patent: July 4, 2000Assignee: Applied Materials, Inc.Inventors: David Cheung, Joe Feng, Madhu Deshpande, Wai-Fan Yau, Judy H. Huang
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Patent number: 5968324Abstract: A stable process for depositing an antireflective layer. Helium gas is used to lower the deposition rate of plasma-enhanced silane oxide, silane oxynitride, and silane nitride processes. Helium is also used to stabilize the process, so that different films can be deposited. The invention also provides conditions under which process parameters can be controlled to produce antireflective layers with varying optimum refractive index, absorptive index, and thickness for obtaining the desired optical behavior.Type: GrantFiled: June 28, 1996Date of Patent: October 19, 1999Assignee: Applied Materials, Inc.Inventors: David Cheung, Joe Feng, Judy H. Huang, Wai-Fan Yau