Abstract: A workpiece alignment system is provided has a light emission apparatus that directs a light beam at a plurality of wavelengths along a path at a shallow angle toward a first side of a workpiece plane at a peripheral region. A light receiver apparatus, receives the light beam on a second side opposite the first side. A rotation device selectively rotates a workpiece support. According controller determines a position of the workpiece based on an amount of the light beam received through the workpiece when the workpiece intersects the path. A sensitivity of the light receiver apparatus is controlled based on a transmissivity of the workpiece. A position of the workpiece is determined when the workpiece is rotated based on the rotational position, an amount of the light beam received, the transmissivity of the workpiece, detection of a workpiece edge, and the controlled sensitivity of the light receiver apparatus.

Abstract: A workpiece alignment system is provided has a light emission apparatus that directs a light beam at a plurality of wavelengths along a path at a shallow angle toward a first side of a workpiece plane at a peripheral region. A light receiver apparatus, receives the light beam on a second side opposite the first side. A rotation device selectively rotates a workpiece support. According controller determines a position of the workpiece based on an amount of the light beam received through the workpiece when the workpiece intersects the path. A sensitivity of the light receiver apparatus is controlled based on a transmissivity of the workpiece. A position of the workpiece is determined when the workpiece is rotated based on the rotational position, an amount of the light beam received, the transmissivity of the workpiece, detection of a workpiece edge, and the controlled sensitivity of the light receiver apparatus.

Abstract: A system and method is provided maintaining a temperature of a workpiece during an implantation of ions in an ion implantation system, where the ion implantation system is characterized with a predetermined set of parameters. A heated chuck is provided at a first temperature and heats the workpiece to the first temperature. Ions are implanted into the workpiece concurrent with the heating, and thermal energy is imparted into the workpiece by the ion implantation. A desired temperature of the workpiece is maintained within a desired accuracy during the implantation of ions by selectively heating the workpiece on the heated chuck to a second temperature. The desired temperature is maintained based, at least in part, on the characterization of the ion implantation system. Thermal energy imparted into the workpiece from the implantation is mitigated by the selective heating of the workpiece on the heated chuck at the second temperature.