Patents by Inventor Joe Lindgren

Joe Lindgren has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor constructions; and methods for providing electrically conductive material within openings
    Patent number: 10879113
    Abstract: Some embodiments include methods for depositing copper-containing material utilizing physical vapor deposition of the copper-containing material while keeping a temperature of the deposited copper-containing material at greater than 100° C. Some embodiments include methods in which openings are lined with a metal-containing composition, copper-containing material is physical vapor deposited over the metal-containing composition while a temperature of the copper-containing material is no greater than about 0° C., and the copper-containing material is then annealed while the copper-containing material is at a temperature in a range of from about 180° C. to about 250° C. Some embodiments include methods in which openings are lined with a composition containing metal and nitrogen, and the lined openings are at least partially filled with copper-containing material.
    Type: Grant
    Filed: August 14, 2018
    Date of Patent: December 29, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Dale W. Collins, Joe Lindgren
  • Semiconductor Constructions; and Methods for Providing Electrically Conductive Material Within Openings
    Publication number: 20180374745
    Abstract: Some embodiments include methods for depositing copper-containing material utilizing physical vapor deposition of the copper-containing material while keeping a temperature of the deposited copper-containing material at greater than 100° C. Some embodiments include methods in which openings are lined with a metal-containing composition, copper-containing material is physical vapor deposited over the metal-containing composition while a temperature of the copper-containing material is no greater than about 0° C., and the copper-containing material is then annealed while the copper-containing material is at a temperature in a range of from about 180° C. to about 250° C. Some embodiments include methods in which openings are lined with a composition containing metal and nitrogen, and the lined openings are at least partially filled with copper-containing material.
    Type: Application
    Filed: August 14, 2018
    Publication date: December 27, 2018
    Applicant: Micron Technology, Inc.
    Inventors: Dale W. Collins, Joe Lindgren
  • Semiconductor constructions; and methods for providing electrically conductive material within openings
    Patent number: 10121697
    Abstract: Some embodiments include methods for depositing copper-containing material utilizing physical vapor deposition of the copper-containing material while keeping a temperature of the deposited copper-containing material at greater than 100° C. Some embodiments include methods in which openings are lined with a metal-containing composition, copper-containing material is physical vapor deposited over the metal-containing composition while a temperature of the copper-containing material is no greater than about 0° C., and the copper-containing material is then annealed while the copper-containing material is at a temperature in a range of from about 180° C. to about 250° C. Some embodiments include methods in which openings are lined with a composition containing metal and nitrogen, and the lined openings are at least partially filled with copper-containing material.
    Type: Grant
    Filed: November 2, 2015
    Date of Patent: November 6, 2018
    Assignee: Micron Technology, Inc.
    Inventors: Dale W. Collins, Joe Lindgren
  • Semiconductor Constructions; and Methods for Providing Electrically Conductive Material Within Openings
    Publication number: 20160056073
    Abstract: Some embodiments include methods for depositing copper-containing material utilizing physical vapor deposition of the copper-containing material while keeping a temperature of the deposited copper-containing material at greater than 100° C. Some embodiments include methods in which openings are lined with a metal-containing composition, copper-containing material is physical vapor deposited over the metal-containing composition while a temperature of the copper-containing material is no greater than about 0° C., and the copper-containing material is then annealed while the copper-containing material is at a temperature in a range of from about 180° C. to about 250° C. Some embodiments include methods in which openings are lined with a composition containing metal and nitrogen, and the lined openings are at least partially filled with copper-containing material.
    Type: Application
    Filed: November 2, 2015
    Publication date: February 25, 2016
    Applicant: Micron Technology, Inc.
    Inventors: Dale W. Collins, Joe Lindgren
  • Semiconductor constructions
    Patent number: 9177917
    Abstract: Some embodiments include methods for depositing copper-containing material utilizing physical vapor deposition of the copper-containing material while keeping a temperature of the deposited copper-containing material at greater than 100° C. Some embodiments include methods in which openings are lined with a metal-containing composition, copper-containing material is physical vapor deposited over the metal-containing composition while a temperature of the copper-containing material is no greater than about 0° C., and the copper-containing material is then annealed while the copper-containing material is at a temperature in a range of from about 180° C. to about 250° C. Some embodiments include methods in which openings are lined with a composition containing metal and nitrogen, and the lined openings are at least partially filled with copper-containing material.
    Type: Grant
    Filed: August 20, 2010
    Date of Patent: November 3, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Dale W. Collins, Joe Lindgren
  • Semiconductor Constructions; And Methods For Providing Electrically Conductive Material Within Openings
    Publication number: 20120043658
    Abstract: Some embodiments include methods for depositing copper-containing material utilizing physical vapor deposition of the copper-containing material while keeping a temperature of the deposited copper-containing material at greater than 100° C. Some embodiments include methods in which openings are lined with a metal-containing composition, copper-containing material is physical vapor deposited over the metal-containing composition while a temperature of the copper-containing material is no greater than about 0° C., and the copper-containing material is then annealed while the copper-containing material is at a temperature in a range of from about 180° C. to about 250° C. Some embodiments include methods in which openings are lined with a composition containing metal and nitrogen, and the lined openings are at least partially filled with copper-containing material.
    Type: Application
    Filed: August 20, 2010
    Publication date: February 23, 2012
    Inventors: Dale W. Collins, Joe Lindgren