Abstract: A cutting assembly comprising a drive arm assembly and knife head assembly for a header of a plant-cutting machine is disclosed. The drive arm assembly generally includes a drive unit connected to a pivotable drive member and a bearing element with a rounded head. The knife head assembly generally includes a mounting bar and a clamping portion that collectively form a cavity for receiving the bearing element and forming a pivot joint. The knife head assembly is attached to a cutter bar such that the operation of the drive unit causes the cutter bar to have substantially linear motion by way of the pivot joint.

Abstract: A header having a sickle cutter for a combine harvester is provided. The sickle cutter includes moveable first and second sickle knife assemblies oscillating at an offset phase. The sickle cutter further includes a stationary knife assembly positioned at a gap between the moveable first and second sickle knife assemblies.

Abstract: A row unit for a header of an agricultural harvester is provided that includes a first longitudinally extending stripping plate and a second longitudinally extending stripping plate each mounted on a frame and each having opposed stripping edges which define a gap between the first stripping plate and the second stripping plate. The row unit includes both operator-selected macro adjustment of the gap and automatic micro adjustment of the gap. The micro adjustment occurs on both deck plates. The micro adjustment is achieved through resilient members positioned functionally between the deck plates and the row unit frame.

Abstract: Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.